2 results about "Metal semiconductor field effect transistors" patented technology

A multilayer semiconductor device includes: a substrate comprising silicon carbide (SiC); and an epitaxial transition layer on the substrate, the epitaxial transition layer comprising a first epitaxial oxide material or SiC. One or more epitaxial active regions comprising one or more second epitaxial oxide materials are formed on the epitaxial transition layer, and a metal layer is formed over the one or more epitaxial active regions, the metal layer comprising one or more electrical contacts. The multilayer semiconductor device includes one of the following: a metal-oxide-semiconductor field-effect transistor (MOSFET), a vertically conductive MOSFET, a lateral MOSFET, a metal-semiconductor field-effect transistor (MSFET), a bipolar junction transistor (BJT), a junction field-effect transistor (JFET), a metal-insulator-semiconductor (MIS) device, a PN device, a PNP device, an NPN device, or an insulated-gate bipolar transistor (IGBT).

A biosensor with a detection transistor of a metal-semiconductor field-effect (MESFET) type, for detecting a target substance. The detection transistor has an isolating substrate, a source electrode, a drain electrode, a first gate electrode, a channel for transmitting a drain-source current between the source electrode and the drain electrode, the channel being made of an oxide semiconductor, arranged on the isolating substrate and having the source electrode and the drain electrode arranged thereon, a sensitive substrate connected to the first gate electrode and including functionalization species for bonding the target substance, such that the first gate electrode connected with said substrate is sensitive to the target substance, and a second gate electrode arranged on the isolating substrate, physically separated from the first gate electrode by the channel, positioned opposite to the first gate electrode and aimed to modulate the drain-source current of the channel.