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Metal-semiconductor field effect transistor with stepped buffer layer structure

A technology of field effect transistors and metal semiconductors, applied in the field of power semiconductor devices, to achieve the effects of improving high-frequency small signal characteristics, reducing parasitic series resistance, and high output power density

Inactive Publication Date: 2011-02-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The DC characteristics and frequency characteristics of SiC MESFET devices with this structure need to be further improved to adapt to applications in microwave frequency bands and high-power applications

Method used

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  • Metal-semiconductor field effect transistor with stepped buffer layer structure
  • Metal-semiconductor field effect transistor with stepped buffer layer structure
  • Metal-semiconductor field effect transistor with stepped buffer layer structure

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Embodiment Construction

[0021] A metal-semiconductor field-effect transistor with a stepped buffer layer structure, such as Figure 2 to Figure 7 As shown, it includes a semi-insulating substrate 17, a buffer layer 16, an active layer 15, a highly doped ohmic contact region 14A under the source electrode, a highly doped ohmic contact region 14B under the drain electrode, and the source electrode 11 and the drain electrode. 12 and gate electrode 13. The buffer layer 16 is stepped, wherein the part with the largest thickness of the buffer layer 16 appears directly below the gate electrode 13, while the thickness of the buffer layer below the two sides of the gate electrode 13 is relatively small; corresponding to the stepped buffer layer 16 , the active layer 15 is in the shape of an inverted ladder, wherein the thinnest part of the active layer 15 appears directly below the gate electrode 13 , and the thickness of the active layer 15 below both sides of the gate electrode 13 is relatively thick.

[0...

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Abstract

The invention relates to a MESFET (Metal-Semiconductor Field Effect Transistor) with a stepped buffer layer structure, belonging to the technical field of power semiconductor devices. The buffer layer becomes stepped by etching an epitaxial buffer layer of the device, so that an active layer epitaxially growing on the buffer layer has varying channel thickness. The thickest part of the buffer layer is right below a gate electrode, and the thickness of the buffer layer below both sides of the gate electrode is small. The active layer is reversely stepped, the thinnest part of the active layer is right below the gate electrode, and the thickness of the active layer below both sides of the gate electrode is large. The MESFET with the stepped buffer layer structure has the advantages of good DC characteristic, frequency characteristic and output power density, and is applicable to microwave and high power fields.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a metal-semiconductor field-effect transistor, in particular to a metal-semiconductor-field-effect-transistor (Metal-Semiconductor-Field-Effect-Transistor, MESFET) applied in microwave and high-power occasions. technical background [0002] In recent years, with the rapid development of microelectronics technology and the urgent needs of aerospace, electronic countermeasures and radar communications and other related fields, the development of new high-frequency and high-power semiconductor devices has attracted more and more attention. Bipolar-Junction-Transistor (BJT) and power metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor-Field-Effect-Transistor, MOSFET) have been widely used in high-power applications. BJTs are minority carrier devices and their power handling capability is limited at higher operating frequencies. Compared wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/812H01L29/06
Inventor 邓小川张波王易
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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