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Matching co-firing method of ltcc power inductor device substrate and ceramic dielectric material

A technology of ceramic dielectric and power inductor, which is applied in the field of matching co-firing of LTCC power inductor device substrate and ceramic dielectric material to achieve good DC characteristics

Inactive Publication Date: 2017-03-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to address the deficiencies and defects of the prior art, to provide a method for matching co-firing between the ferrite material and the dielectric material that can be applied to LTCC stacked passive devices, and to use the dielectric layer as the base material The non-magnetic air-gap layer is used to adjust the magnetic properties of the entire co-fired body and the electrical properties of the device, and obtain a laminated co-fired body that can be sintered at low temperature without warpage, cracks and other defects and with good interface bonding

Method used

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  • Matching co-firing method of ltcc power inductor device substrate and ceramic dielectric material
  • Matching co-firing method of ltcc power inductor device substrate and ceramic dielectric material
  • Matching co-firing method of ltcc power inductor device substrate and ceramic dielectric material

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Embodiment 1

[0033] The invention discloses a matching co-firing method of an LTCC power inductance device base body and a ceramic dielectric material, in which a low-temperature sintered NiCuZn ferrite material and a ceramic silicate material are matched and co-fired through an LTCC wet casting process.

[0034] The NiCuZn ferrite molecular formula described in this embodiment is Ni 0.4 Cu 0.24 Zn 0.47 Fe 1.82 o 4 , taking into account the iron-deficiency formula and the partial volatilization of ZnO at high temperature, in line with MFe 2 o 4 spinel structure.

[0035] Raw materials of NiCuZn ferrite include NiO (purity 99.2%), ZnO (purity 99.5%), CuO (purity 99.5%), Fe 2 o 3 (purity 99.3%), and NiO, ZnO, CuO, Fe 2 o 3 The molar ratio is 20:23.5:12:45.5.

[0036] The dielectric material of ceramic silicate material is Zn 2 SiO 4 Material, the main component is ZnO:SiO 2 It is compounded according to the molar ratio of the main component of 2:1;

[0037]The method further in...

Embodiment 2

[0045] The invention discloses a matching co-firing method of an LTCC power inductance device base body and a ceramic dielectric material, in which a low-temperature sintered NiCuZn ferrite material and a ceramic silicate material are matched and co-fired through an LTCC wet casting process.

[0046] The NiCuZn ferrite molecular formula described in this embodiment is Ni 0.4 Cu 0.24 Zn 0.47 Fe 1.82 o 4 , taking into account the iron-deficiency formula and the partial volatilization of ZnO at high temperature, in line with MFe 2 o 4 spinel structure.

[0047] Raw materials of NiCuZn ferrite include NiO (purity 99.2%), ZnO (purity 99.5%), CuO (purity 99.5%), Fe 2 o 3 (purity 99.3%), and NiO, ZnO, CuO, Fe 2 o 3 The molar ratio is 20:23.5:12:45.5.

[0048] The method further includes the following steps: (1) Preparation of calcined powder: wet-grinding the raw materials of NiCuZn ferrite according to the above-mentioned molar ratio in a grinder using zirconium balls as t...

Embodiment 3

[0057] The invention discloses a matching co-firing method of an LTCC power inductance device base body and a ceramic dielectric material, in which a low-temperature sintered NiCuZn ferrite material and a ceramic silicate material are matched and co-fired through an LTCC wet casting process.

[0058] The NiCuZn ferrite molecular formula described in this embodiment is Ni 0.4 Cu 0.24 Zn 0.47 Fe 1.82 o 4 , taking into account the iron-deficiency formula and the partial volatilization of ZnO at high temperature, in line with MFe 2 o 4 spinel structure.

[0059] Raw materials of NiCuZn ferrite include NiO (purity 99.2%), ZnO (purity 99.5%), CuO (purity 99.5%), Fe 2 o 3 (purity 99.3%), and NiO, ZnO, CuO, Fe 2 o 3 The molar ratio is 20:23.5:12:45.5.

[0060] The method further includes the following steps: (1) Preparation of calcined powder: wet-grinding the raw materials of NiCuZn ferrite according to the above-mentioned molar ratio in a grinder using zirconium balls as t...

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Abstract

The present invention provides a method for matching and co-firing LTCC power inductive device substrates and ceramic dielectric materials, in which low-temperature sintered NiCuZn ferrite materials and ceramic silicate materials are matched and co-fired through the LTCC wet casting process; the present invention applies the LTCC process Realize the matching of NiCuZn ferrite and silicate medium, in which silicate is used as a non-magnetic air gap layer to adjust the magnetic properties of the entire co-fired body and the electrical properties of the device, and obtain a non-separation-free material that can be sintered at a low temperature of 900 °C Layer cracking, no warping deformation and well-bonded laminated co-fired body; and the DC characteristics of the laminated power inductor made of the co-fired body as the base material have better DC characteristics than the inductance without dielectric air gap .

Description

technical field [0001] The invention relates to the field of preparation methods of ceramic materials, in particular to a matching co-firing method of an LTCC power inductance device substrate and a ceramic dielectric material. Background technique [0002] With the rapid development of modern information technology, higher and higher requirements are put forward for the miniaturization, portability, multi-function, high reliability and low cost of electronic products. Low temperature cofired ceramic technology (Low temperature cofired ceramic, LTCC) is an eye-catching multidisciplinary integrated component technology that has emerged in recent years. Because of its excellent electronic and thermomechanical properties, it has become the preferred method of customization. It uses thick film materials, and according to the pre-designed structure, the electrode materials, substrates, electronic devices, etc. are fired at a time below 900 ° C. It is a low-cost, high-integration...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/64C04B35/26C04B35/16
Inventor 李元勋邓龙超王旭苏桦沈健韩莉坤李颉张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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