Metal semiconductor field effect light emitting transistor and preparing method thereof

Abstract

The invention discloses a metal semiconductor field effect transistor and the fabrication method thereof. The metal semiconductor field effect transistor comprises a substrate, a buffer layer which is arranged on the substrate, a first n type heavily doped layer above the buffer layer, a multi-quantum well layer and a p type layer which are sequentially arranged on the n type layer, a second n type heavily doped layer above the buffer layer, a source electrode which is in Ohmic contact with the second n type heavily doped layer, and a drain electrode which is in Ohmic contact with the p type layer. The first n type heavily doped layer is not connected with the second n type heavily doped layer. The metal semiconductor field effect transistor is characterized in that a slightly doped n type layer is arranged between the buffer layer and first and second n type heavily doped layers, and a SiO2 layer connected with the slightly doped n type layer is embedded between the substrate and the buffer layer. The metal semiconductor field effect transistor further comprises a gate electrode which is in Schottky contact with the SiO2 layer. The metal semiconductor field effect transistor reduces etching damages, thus improving the performance of the components.

Description

technical field [0001] The invention relates to a light-emitting transistor and belongs to the field of semiconductor devices. Background technique [0002] Wide bandgap semiconductor GaN is an ideal material for preparing optoelectronic devices (LED, LD, etc.) and high-temperature and high-power electronic devices (MESFET, HEMT, etc.). Due to the difficulty of growing GaN bulk crystals, most GaN materials are made by heteroepitaxy on sapphire or semi-insulating SiC substrates. Therefore, when manufacturing GaN devices, in order to lead out electrodes, n-type GaN For Schottky contacts, etching is essential. GaN has strong chemical stability, and there is no effective wet chemical etching solution at present. Therefore, dry etching is used in the device manufacturing process. At present, inductively coupled plasma (ICP) etching is widely used in GaN technology. eclipse. However, the etching damage introduced by dry etching has a serious adverse effect on the optical and el...

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Problems solved by technology

However, the etching damage introduced by dry etching has a serious adverse effect on the optical and electrical characteristics of the device. For example, the bombardment of high-energy ions in etching causes a large number of point defects and defect clusters, etch products and mask materials. Contamination, surface roughening, and the introduction of other impurities, etc., will affect the characteristics of the device

ICP etching will introduce damage on the GaN surface, forming electron trap energy levels, which will cause the Schottky barrier height to decrease, the ideality factor to increase, and the reverse leakage current to increase, etc.

These damages are not a concern for n-type GaN ohmic contacts, because the reduction of n-GaN surface resistivity after etching is conducive to the formation of n-type ohmic contacts, but it has a great impact on n-type GaN Schottky contacts. influences

For example, the etching damage introduced during the trench gate fabrication process will cause the characteristics of GaN FET to degrade

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