113results about How to "Reduce etch damage" patented technology

The invention discloses a method for forming a semiconductor device. The method includes that a substrate is provided, the substrate includes a first area and a second area, two gate structures which are located in the first area and the second area respectively are formed on the substrate, a first side wall and a second side wall are formed, the first side wall covers the substrate surface and two sides and surface of the gate structure in the first area, the second side wall covers the substrate surface and two sides and surface of the gate structure in the second area, the second side wall and the substrate are subjected to patterning etching, an opening is formed in the substrate which is located on two sides of the second side wall, an epitaxial layer is formed in the opening, before the epitaxial layer is formed, the first side wall is subjected to an ion implantation or an ion doping process, and thereby the density of the first side wall is improved. According to the method, the density of the first side wall is improved by the ion implantation or the ion doping process, and thereby the process selection ratio of the n-channel metal oxide semiconductor (NMOS) and the p-channel metal oxide semiconductor (PMOS) is improved when the epitaxial layer is formed on the same substrate.

The invention provides a GaN-based enhanced high electron mobility transistor and a preparation method thereof. The transistor comprises a substrate GaN buffer layer, a barrier layer and a passivation layer from the bottom to the top. The transistor further comprises a gate groove which runs through the high temperature resistance passivation layer, the barrier layer and a two-dimensional electron gas layer on the interface of the barrier layer and the GaN buffer layer and extends into the GaN buffer layer. A P-type gate dielectric layer grows in the gate groove. The gate of the transistor is located above the P-type gate dielectric layer. The source and the drain of the transistor are respectively located on both sides of the GaN buffer layer. According to the invention, higher gate threshold voltage can be acquired; and the defects of difficult control of etching damage and damaged conduction channel carrier mobility caused by over-etching can be overcome.

Disclosed herein is a semiconductor device and method of manufacturing the same. A step between a memory cell formed in a cell region and a transistor formed in a peripheral circuit region is minimized, and the height of a gate in the memory cell is minimized. Accordingly, subsequent processes are facilitated and the electrical property of the device is thus improved.

In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.

A test structure including a transistor, a conductive pattern and a pad unit is provided. The transistor may be formed on a substrate having circuit patterns. The conductive pattern is electrically connected to the transistor. The conductive pattern may be used in aligning the circuit patterns and/or sensing plasma damage to the semiconductor device. The conductive pattern may be used in reducing etching damage to the circuit patterns and sensing plasma damage to the semiconductor device. The pad unit is electrically connected to the transistor, and provides electrical signals to the transistor. The conductive pattern may serve as an antenna pattern and/or an align/overlay pattern or a dummy pattern.

The invention provides a method for manufacturing a contact plug. The method comprises the following steps of: providing a semiconductor substrate on which a grid structure and a first interlamination medium layer are formed, wherein the grid structure is flushed with the first interlamination medium layer, and a source and a drain are formed in the semiconductor substrate on two sides of the grid structure; etching the first interlamination medium layer to form a first contact hole which is used for exposing the source and the drain; filling a first metal layer into the first contact hole; forming a second interlamination medium layer on the first interlamination medium layer; etching the second interlamination medium layer to form a second contact hole, wherein the position of the second contact hole corresponds to the position of the first contact hole; and filling a second metal layer into the second contact hole, wherein the resistivity of the second metal layer is smaller than that of the first metal layer; and the second metal layer in the second contact hole and the first metal layer in the first contact hole form the contact plug together. The contact plug manufactured by using the method has small resistance.

A forming method for a 3D NAND memory comprises the following steps: providing a semiconductor substrate, wherein stack structures are formed on the semiconductor substrate, each stack structure comprises a plurality of sacrificial layers and a plurality of isolating layers which are alternately stacked, the stack structures are respectively provided with a first channel hole and a second channelhole which are communicated with each other, the second channel hole has an alignment offset relative to the first channel hole, a step is formed at the junction of the first channel hole and the second channel hole, and the first channel hole is filled with a sacrificial material layer; after a side wall is formed, carrying out etching-back to remove the sacrificial material layer with a part ofthe thickness; carrying out etching on the step, so that the gradient of the step is reduced; forming charge storage layers on the side walls and at the bottoms of the first channel hole and the second channel hole; forming channel hole sacrificial layers on the charge storage layers; and sequentially carrying out etching on the channel hole sacrificial layer and the charge storage layer at the bottom of the first channel hole, so that an opening is formed. The method provided by the invention has the advantages that the charge storage layer at the step can be prevented from being broken or damaged during the etching, so that failure of the memory can be avoided.

A method for etching an opening in laminated dielectric layers comprises: providing a substrate with laminated dielectric layers; forming a photoetching adhesive layer on the laminated dielectric layers, imaging the photoetching adhesive layer to form an opening pattern; etching the laminate dielectric layers at the bottom of the opening pattern and not stopping until the downmost layer in the laminate dielectric layers is exposed; removing the photoetching adhesive layer; etching the downmost layer in the laminated dielectric layers at the bottom of the opening pattern; forming an opening penetrating through the laminate dielectric layer; wherein, in the step of etching the downmost layer in the laminate dielectric layer at the bottom of the opening pattern, etching is carried out by inductive coupling of plasma body. The invention can reduce the damage on the opening side wall when the opening is etched in the laminated dielectric layer.

The invention discloses a mask and a production method thereof. The mask comprises a substrate, a mask pattern layer and a sacrificial layer, wherein the substrate comprises a first surface and a second surface opposite to the first surface; a plurality of openings running through the substrate are formed in the substrate; the substrate can be patterned by a semiconductor etching technology; the mask pattern layer is positioned on the first surface; the mask pattern layer comprises adjacent pattern areas and blocked areas; each pattern area is provided with at least one through hole running through the mask pattern layer; the openings expose the pattern areas, and each pattern area corresponds to the corresponding opening; the sacrificial layer is positioned between the substrate and the mask pattern layer. The mask is produced by a semiconductor technology; compared with a metal mask produced in the conventional chemical etching way, the mask produced by the semiconductor technology has the advantages as follows: the quality of the mask and the precision of the through holes can be improved, reduction in the size of the through holes and the thickness of the mask pattern layer isfacilitated, the mask pattern layer and the substrate can be prevented from displacement, and the quality and the precision of the mask are relatively high.

A vertical semiconductor device includes conductive pattern structures extending in a first direction, a trench between two adjacent conductive pattern structures in a second direction crossing the first direction, a memory layer disposed on sidewalls of the trench, first insulation layers disposed in the trench and spaced apart from each other in the first direction, channel patterns disposed on the memory layer and in the trench and spaced apart from each other in the first direction, and etch stop layer patterns disposed in the trench. Each conductive pattern structure includes conductive patterns and insulation layers alternately stacked on an upper surface of the substrate. Each etch stop layer pattern is disposed between a corresponding first insulation layer and the blocking dielectric layer. Etch stop layer patterns are spaced apart from each other in the first direction.

A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.

The invention discloses a metal semiconductor field effect transistor and the fabrication method thereof. The metal semiconductor field effect transistor comprises a substrate, a buffer layer which is arranged on the substrate, a first n type heavily doped layer above the buffer layer, a multi-quantum well layer and a p type layer which are sequentially arranged on the n type layer, a second n type heavily doped layer above the buffer layer, a source electrode which is in Ohmic contact with the second n type heavily doped layer, and a drain electrode which is in Ohmic contact with the p type layer. The first n type heavily doped layer is not connected with the second n type heavily doped layer. The metal semiconductor field effect transistor is characterized in that a slightly doped n type layer is arranged between the buffer layer and first and second n type heavily doped layers, and a SiO2 layer connected with the slightly doped n type layer is embedded between the substrate and the buffer layer. The metal semiconductor field effect transistor further comprises a gate electrode which is in Schottky contact with the SiO2 layer. The metal semiconductor field effect transistor reduces etching damages, thus improving the performance of the components.

A formation method of a semiconductor structure comprises the steps of providing a substrate in which a bottom-layer metal layer is formed; forming an etching barrier layer covering the surfaces of the substrate and the bottom-layer metal layer; forming a dielectric layer covering the surface of the etching barrier layer; forming an opening penetrating the dielectric layer, and exposing the surface of the etching barrier layer out of the bottom of the opening; adopting a dry etching process of an etching gas containing CF3I to etch a part of thickness of etching barrier layer located at the bottom of the opening, and forming a protection layer on the surface of the side wall of the opening while etching the part of thickness of etching barrier layer; after the protection layer is formed, adopting an isotropy dry etching process to etch and remove the residual thickness of etching barrier layer until the top surface of the bottom-layer metal layer is exposed; forming a conductive layer on the surface of the exposed bottom-layer metal layer, wherein the conductive layer fills the opening. According to the present invention, the etching damage to the bottom-layer metal layer is reduced, and the electrical property of the semiconductor structure is improved.

The invention discloses a forming method of a 3D NAND memory. The method comprises the steps of providing a semiconductor substrate, wherein a stacking structure is formed on the semiconductor substrate and comprises a plurality of sacrificial layers and isolation layers which are alternately stacked; the stacking structure is provided with a first channel hole and a second channel hole which communicate with each other, the second channel hole is aligned and deviated relative to the first channel hole, a step is formed at the junction of the first channel hole and the second channel hole, andthe first channel hole is filled with a sacrificial material layer; forming a side wall on the side wall of the second channel hole; etching the first channel hole to enable the width of the first channel hole to be widened and enable the width of the step to be reduced; forming charge storage layers on the side walls and the bottoms of the first channel hole and the second channel hole; forminga channel hole sacrificial layer on each charge storage layer; and sequentially etching the channel hole sacrificial layer and the charge storage layer on the bottom of the first channel hole to forman opening. The method provided by the invention prevents the charge storage layer at the step from being etched or damaged, thereby preventing the memory from failing.

The invention relates to a forming method of a 3D NAND storage. The forming method comprises the steps of: providing a semiconductor substrate, wherein a stacked structure comprising a plurality of sacrificial layers and isolation layers, which are alternatively stacked, is formed on the semiconductor substrate, a first channel hole and a second channel hole which are communicated are formed in the stacked structure, the second channel hole has an alignment offset relative to the first channel hole, a step is formed at a junction of the first channel hole and the second channel hole, and the first channel hole is full filled with a sacrificial material layer; forming a side wall on the side wall of the second channel hole; removing a part of the sacrificial material layer; etching the first channel hole to increase a width of the first channel hole and reduce a width of the step; forming charge storage layers on the side walls and at the bottoms of the first channel hole and the secondchannel hole; forming channel hole sacrificial layers on the charge storage layers; and sequentially etching the channel hole sacrificial layer and the charge storage layer at the bottom of the firstchannel hole so as to form an opening. By the method provided by the invention, the charge storage layers at the step are prevented from being etched off or damaged so as to prevent a failure of thestorage.

The invention provides a method for improving performance of a core device and an input-output device. The method comprises steps of providing a substrate; forming a first oxide layer on the surface of the substrate in a core device region and an input-output device region; forming a cap layer on the surface of the first oxide layer; performing etching to remove the cap layer in the core device region; forming a pseudo grid film on the surface of the cap layer in the input-output device region and the substrate in the core device region; patterning the pseudo grid film to form a pseudo grid layer; forming an interlayer dielectric layer to cover the surface of the side wall of the pseudo grid layer on the substrate after the pseudo grid layer is formed; performing etching to remove the pseudo grid layer; removing the cap layer in the input-output device region; and forming a second oxide layer on the surface of the substrate in the core device region after the cap layer is removed, wherein the thickness of the second oxide layer is smaller than the thickness of the first oxide layer. The method provided by the invention improves integrity of the grid oxide layer of the input-output device and the core device, and the NBTI performance and the PBTI performance.

The invention relates to a mask and a fabrication method thereof. The mask comprises a substrate, a sacrificial layer and a mask pattern layer, wherein the substrate comprises a first surface and a second surface, the second surface deviates from the first surface, a plurality of openings are formed in the substrate and penetrate through the substrate, the substrate can be used for patterning by asemiconductor etching process, the sacrificial layer is arranged on the first surface, a plurality of holes are formed in the sacrificial layer, the mask pattern layer is arranged on the sacrificiallayer and comprises pattern regions and shielding regions which are adjacent to each other, at least one through hole is formed in the pattern regions and penetrates through the mask pattern layer, the pattern regions are exposed out of the openings and holes, each pattern region is corresponding to the openings and holes, the mask pattern layer is provided with an annular bulge extending to the openings, and the annular bulge is in contact with side walls of the openings. The mask is made by the semiconductor process, the quality of the mask and the through hole accuracy can be improved by the semiconductor process, the through hole size and the thickness of the mark pattern layer are favorably reduced, displacement of the mask pattern layer and the substrate also can be prevented, and the quality and the accuracy of the mask are higher.

A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrystalline silicon layer on the gate and the substrate, respectively, using a selective silicon growth. A metal is deposited on the polycrystalline silicon layer and the monocrystalline silicon layer. Then, the metal reacts with silicon of the polycrystalline silicon layer and the monocyrstalline silicon layer to form a self-aligned metal silicide layer. Therefore, selective wet etching for removing an unreacted metal after silicidation can be omitted. Furthermore, etching damage caused during the formation of the spacer can be decreased during the growth of the monocrystalline silicon layer, thereby improving the electrical characteristics of devices.