Formation method of semiconductor structure
A semiconductor and conductive layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the electrical performance of semiconductor structures needs to be improved
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[0032] It can be seen from the background art that the electrical performance of the semiconductor structure formed in the prior art needs to be improved.
[0033] The method for forming a semiconductor structure includes the following steps:
[0034] refer to figure 1 1. Provide a substrate 100, the base metal layer 101 is formed inside the substrate 100, and a dielectric layer 102 is formed on the surface of the substrate 100; a partial thickness of the dielectric layer 102 is etched, and a pre-opening 103 is formed in the dielectric layer 102.
[0035] refer to figure 2 , etch at the pre-opening 103 (refer to figure 1 ) below the dielectric layer 102 to form an opening 104 penetrating through the dielectric layer 102, and the bottom of the opening 104 exposes the surface of the underlying metal layer 101; a conductive layer filling the opening 104 is formed.
[0036] In the above method, the underlying metal layer 101 is severely damaged by etching, which makes the el...
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