Method for improving performance of core device and input-output device

Abstract

The invention provides a method for improving performance of a core device and an input-output device. The method comprises steps of providing a substrate; forming a first oxide layer on the surface of the substrate in a core device region and an input-output device region; forming a cap layer on the surface of the first oxide layer; performing etching to remove the cap layer in the core device region; forming a pseudo grid film on the surface of the cap layer in the input-output device region and the substrate in the core device region; patterning the pseudo grid film to form a pseudo grid layer; forming an interlayer dielectric layer to cover the surface of the side wall of the pseudo grid layer on the substrate after the pseudo grid layer is formed; performing etching to remove the pseudo grid layer; removing the cap layer in the input-output device region; and forming a second oxide layer on the surface of the substrate in the core device region after the cap layer is removed, wherein the thickness of the second oxide layer is smaller than the thickness of the first oxide layer. The method provided by the invention improves integrity of the grid oxide layer of the input-output device and the core device, and the NBTI performance and the PBTI performance.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of core devices and input and output devices. Background technique [0002] Metal-Oxide-Semiconductor (MOS) devices have been called one of the commonly used semiconductor devices in integrated circuits. The MOS devices include: P-type metal oxide semiconductor (PMOS, P-type MOS) devices, N-type metal oxide semiconductor (NMOS, N-type MOS) devices, and complementary metal oxide semiconductor (CMOS, Complementary MOS) devices Device. [0003] Metal oxide semiconductor devices are mainly divided into core (Core) devices and input and output (IO, Input and Output) devices according to their functions. According to the electrical types of metal oxide semiconductor devices, core devices can be divided into core NMOS devices and core PMOS devices, and input and output devices can be divided into input and output NMOS devices and inp...

AI Technical Summary

Problems solved by technology

[0005] However, the semiconductor devices formed by the prior art still have the problem of poor electrical performance

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