HEMT device and manufacturing method of HEMT device

A device and gate technology, which is applied in the field of HEMT devices and their manufacturing, can solve the problems of reducing the high-frequency performance and breakdown performance of the device, reducing the reliability and yield of the device, and increasing the gate leakage current, so as to improve the high-frequency performance, reducing etch damage, shortening gate-source and gate-drain distances

Active Publication Date: 2015-03-25
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, high-temperature annealing is usually used in the industry to form alloy ohmic contacts. However, high-temperature annealing will cause gate junction degradation or even failure, increase gate leakage current, and even form ohmic contacts at gate Schottky junctions.
A large gate leakage current will reduce the high frequency performance and breakdown performance of the device, while reducing the reliability and yield of the device

Method used

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  • HEMT device and manufacturing method of HEMT device
  • HEMT device and manufacturing method of HEMT device
  • HEMT device and manufacturing method of HEMT device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] figure 1 A schematic structural diagram of the HEMT device provided by Embodiment 1 of the present invention is shown. Such as figure 1 As shown, the structure of the HEMT device shown includes: a substrate 100; an active region 106 formed on the substrate 100; a barrier region 107 formed on the active region 106; a barrier region 112 formed on the barrier region 107 Above, the gate 103 is formed on the barrier region 112; the low resistance region 104 is formed on both sides of the gate 103, wherein the low resistance region 104 is formed by a self-alignment process with the gate 103 as a mask, and the The low-resistance region 104 has doped particles, and the peak value of the concentration of the doped particles in the vertical direction is located at the part corresponding to the active region 106 or the part corresponding to the barrier region 107; and, the source electrode 108 and the drain 109 are respectively formed on the low resistance region 104 on both sid...

Embodiment 2

[0118] Image 6 It is a cross-sectional view of the structure of the HEMT device provided by Embodiment 2 of the present invention, such as Image 6 shown. Image 6 The same elements as in Fig. 3g are designated with the same reference numerals.

[0119] The structure of the HEMT device shown includes: a substrate 100; a buffer layer 110 formed on the substrate 100; an active region 106 formed on the buffer layer 110; a barrier region 107 formed on the active region 106; The barrier region 112 is formed on the barrier region 107, the gate 103 is formed on the barrier region 112; the gate spacers 113 and 114 are respectively located on both sides of the gate 103; the low resistance region 104 is formed on both sides of the gate 103 side, wherein the low-resistance region 104 is formed by a self-aligned process with the gate 103 as a mask, and the low-resistance region 104 has doped particles, and the peak value of the concentration of the doped particles in the vertical direc...

Embodiment 3

[0141] Figure 8 It is a cross-sectional view of the structure of the HEMT device provided by Embodiment 3 of the present invention, such as Figure 8 As shown, the HEMT device provided in the third embodiment includes: a substrate 201; a buffer layer 202, the buffer layer 202 is formed on the substrate 201; an active region 210, the active region 210 is formed on the buffer layer 202; barrier region 211, the barrier region 211 is formed on the active region 210; barrier region 212, the barrier region 212 is formed on the barrier region 211; gate 206, the gate 206 is formed on the barrier region 212; Pole sidewalls 215 and 216, the gate sidewalls 215 and 216 are formed on both sides of the gate 206 or formed on both sides of the gate 206 and on the gate 206; the low resistance region 207 is formed on both sides of the gate 203, wherein , the low-resistance region 207 is formed by a self-alignment process with the gate 206 as a mask, and the low-resistance region 207 has doped...

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Abstract

The invention discloses an HEMT device and a manufacturing method of the HEMT device. The HEMT device comprises a substrate, an active region formed on the substrate, a barrier region formed on the active region, a blocking region formed on the barrier region, a grid formed on the blocking region, low-resistance regions formed on the two sides of the grid respectively, a source and a drain, wherein the grid is used in the low-resistance regions as masking, the low-resistance regions are formed according to a self-alignment process and are provided with doping particles, and the source and the drain are formed on the low-resistance regions on the two sides of the grid respectively. By means of the HEMT device and the manufacturing method, the grid-source distance and the grid-drain distance are effectively reduced, the grid-source series resistance and the grid-drain series resistance are reduced, and the high frequency characteristic of the device is improved. In addition, accurate alignment is not needed when the low-resistance regions are formed, the requirement for the alignment accuracy of the photolithography technique is reduced, the yield of the device is improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a HEMT device and a manufacturing method thereof. Background technique [0002] Compared with other semiconductor materials, group III nitride materials have the advantages of large band gap, high critical breakdown electric field, high saturation electron velocity, high thermal conductivity, and stable chemical properties. In addition, group III nitride materials have strong spontaneous polarization and piezoelectric polarization effects. For example, GaN can be formed with materials such as aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN) and aluminum nitrogen (AlN) with high surface area. Density and high mobility two-dimensional electron gas (2DEG) conducting channels. Therefore, GaN-based high electron mobility field-effect transistors (HEMTs) have the characteristics of high current density, high power density, good high-frequency chara...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/45H01L21/335H01L21/28
CPCH01L29/41775H01L29/42364H01L29/42372H01L29/45H01L29/66462H01L29/778
Inventor 裴轶张乃千
Owner DYNAX SEMICON
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