HEMT device and manufacturing method of HEMT device

A device and gate technology, which is applied in the field of HEMT devices and their manufacturing, can solve the problems of reducing the high-frequency performance and breakdown performance of the device, reducing the reliability and yield of the device, and increasing the gate leakage current, so as to improve the high-frequency performance, reducing etch damage, shortening gate-source and gate-drain distances
CN104465746AActive Publication Date: 2015-03-25DYNAX SEMICON
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
DYNAX SEMICON
Publication Date
2015-03-25

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Abstract

The invention discloses an HEMT device and a manufacturing method of the HEMT device. The HEMT device comprises a substrate, an active region formed on the substrate, a barrier region formed on the active region, a blocking region formed on the barrier region, a grid formed on the blocking region, low-resistance regions formed on the two sides of the grid respectively, a source and a drain, wherein the grid is used in the low-resistance regions as masking, the low-resistance regions are formed according to a self-alignment process and are provided with doping particles, and the source and the drain are formed on the low-resistance regions on the two sides of the grid respectively. By means of the HEMT device and the manufacturing method, the grid-source distance and the grid-drain distance are effectively reduced, the grid-source series resistance and the grid-drain series resistance are reduced, and the high frequency characteristic of the device is improved. In addition, accurate alignment is not needed when the low-resistance regions are formed, the requirement for the alignment accuracy of the photolithography technique is reduced, the yield of the device is improved, and the production cost is reduced.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a HEMT device and a manufacturing method thereof. Background technique

[0002] Compared with other semiconductor materials, group III nitride materials have the advantages of large band gap, high critical breakdown electric field, high saturation electron velocity, high thermal conductivity, and stable chemical properties. In addition, group III nitride materials have strong spontaneous polarization and piezoelectric polarization effects. For example, GaN can be formed with materials such as aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN) and aluminum nitrogen (AlN) with high surface area. Density and high mobility two-dimensional electron gas (2DEG) conducting channels. Therefore, GaN-based high electron mobility field-effect transistors (HEMTs) have the characteristics of high current density, high power density, good high-frequency chara...

Claims

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