121results about How to "Etch rate reduction" patented technology

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si_xC_yN_z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.

The classes of compounds are generally represented by the formulas:

• • and mixtures thereof, wherein R and R¹ in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R¹ in formula A also being combinable into a cyclic group, and R² representing a single bond, (CH₂)_n, a ring, or SiH₂.

A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH₃) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.

The disclosed fabrication methodology addresses the problem of creating low-cost micro-electro-mechanical devices and systems, and, in particular, addresses the problem of delicate microstructures being damaged by the surface tension created as a wet etchant evaporates. This disclosure demonstrates a method for employing a dry plasma etch process to release encapsulated microelectromechanical components.

A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.

An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.

A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refraction index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.

Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.

A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

Various embodiments of the invention relate to etching processes used in fabrication of MTJ cells in an MRAM device. The various embodiments can be used in combination with each other. The first embodiment adds a hard mask buffer layer between a hard mask and a top electrode. The second embodiment uses a multilayered etching hard mask. The third embodiment uses a multilayered top electrode structure including a first Cu layer under a second layer such as Ta. The fourth embodiment is a two-phase etching process used for the bottom electrode to remove re-deposited material while maintaining a more vertical sidewall etching profile. In the first phase the bottom electrode layer is removed using carbonaceous reactive ion etching until the endpoint. In the second phase an inert gas and/or oxygen plasma is used to remove the polymer that was deposited during the previous etching processes.

The present invention relates to a semi-aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from semiconductor substrates. The cleaning composition comprises a buffering system comprising a polyprotic acid having at least three carboxylic acid groups with a pKa value of about 5 to about 7. The composition also comprises a polyhydric solvent, such as glycerol. A fluoride ion source is also included in the cleaning compositions of the present invention and is principally responsible for removing inorganic residues from the substrate. The cleaning compositions of the present invention have a low toxicity and are environmentally acceptable.

A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H₂, O₂, O₃, CO, CO₂, COCl₂, COF₂, CF₃OF, NO₂, F₂, NF₃, Cl₂, Br₂, I₂, CH₄, C₂H₂, C₂H₄, C₂H₆, C₃H₄, C₃H₆, C₃H₈, HF, HI, HBr, HCl, NO, NH₃ and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

A composition for the cleaning of residues from substrates can contain from about 0.01 percent by weight to about 5 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an organic amide solvent and from 0 to about 50 weight percent of an organic sulfoxide solvent. The composition can have a pH between about 7 and about 10, alternately from greater than 8 to about 10. Additionally, the composition optionally can contain corrosion inhibitors, chelating agents, surfactants, acids, and/or bases. In use of the composition, a substrate can advantageously be contacted with the composition for a time and at a temperature that permits cleaning of the substrate.

An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the present invention contain a multifunctional activator which provides increased copper removal rate to the aqueous polishing slurry/solution while suppressing isotropic chemical etch and dishing of copper lines.

A semiconductor device comprises a first insulating film formed over a semiconductor substrate, a second insulating film formed on the first insulating film, a contact plug made of a conductive material vertically penetrating the first and second insulating films and extending on the second insulating film, and a conductor film in contact with the upper surface of the contact plug and part of the second insulating film. This construction makes it possible to form minute via-holes in a mass-production line without increasing parasitic capacity, increasing the number of manufacturing steps, and generating defects.

Reliable HTO (High Temperature Oxide) dielectrics are provide by a rapid thermal chemical vapor deposition (RTCVD) process in which a low pressure and a high ratio of reactants, e.g., oxygen-containing gas to silane-containing gas, is employed. Specifically, the reliable HTO is formed by a rapid thermal chemical vapor deposition at temperatures of from about 500° C. or above, said rapid thermal chemical vapor deposition process being carried out at a pressure of less than 80 Torr and in the presence of at least one oxygen-containing reactant and at least one silane-containing reactant, said reactants having a ratio of oxygen-containing to silane-containing of about 25:1 or greater. Semiconductor devices such as capacitors and transistors that include at least a layer of the high temperature oxide of the present invention used as a dielectric material are also provided.