The invention relates to the technical field of semiconductors, and discloses a method for stripping a substrate
wafer, which comprises the following steps of: forming a first
metal layer on the surface of a
gallium nitride layer opposite to the substrate
wafer, and forming a second
metal layer on the surface of a support
wafer; correspondingly contacting and bonding the first
metal layer and the second metal layer together to form a bonded wafer; performing a first heating process; a
laser scanning process is carried out on the surface of one side of the substrate wafer of the bonded wafer along a
laser scanning path from the edge to the center by adopting a
laser, so that the substrate wafer is separated from the
gallium nitride layer; the temperature of the bonded wafer is gradually reduced from the edge to the center in the process; a
laser scanning path on the surface of the substrate wafer is a
spiral line from the edge to the center; and along a
laser scanning path, from the edge to the center, the
laser energy density, the
laser scanning linear speed and the
decomposition rate of the
gallium nitride layer are gradually reduced, and the distances between adjacent light spots are the same. According to the invention, the yield of the
gallium nitride layer after the laser lift-off process can be improved, and the
fracture risk of the substrate wafer is reduced.