Dual field plate mesfet and its forming method

Abstract

A dual field plate MESFET (90) and method of forming a MESFET. The MESFET (90) includes a gate electrode (100) and a drain electrode (96), with the gate electrode (100) and drain electrode (96) formed on a substrate (105). The MESFET further includes a gate side field plate (110) at the gate electrode (100) and a drain side field plate (112) in proximity to the drain electrode (96) and extending over a burnout improvement region in the substrate (105).

Description

technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to metal semiconductor field effect transistors (MESFETs). Background technique [0002] MESFETs, also known as Schottky gate field effect transistors (FETs), such as GaAs MESFETs, can be used in many different electronic applications. These applications range from providing switching operations (eg, high-speed digital switching) to providing signal amplification. Additionally, these applications include commercial, industrial and military applications. [0003] MESFETs are often included in devices used in microwave frequency communications and radar. This device and other devices and systems using or incorporating MESFETs have ever-increasing power requirements. For example, the desired power output per MESFET device, such as per transistor surface area, continues to increase. Since the power output of transistors operating at high voltages is also greatly imp...

AI Technical Summary

Problems solved by technology

However, the gate field plate does not affect the high field region in the drain ohmic contact region which also causes channel burnout

The burnout potential close to the drain contact limits the operating range and robustness of MESFETs for high voltage applications

Thus, the gate Schottky and / or drain contact area limits the high voltage operating characteristics of the MESFET

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