Metal-semiconductor field effect transistor

Abstract

The invention relates to a metal-semiconductor field effect transistor, which comprises a grid electrode formed by metal, and a trench area which is made of a semiconductor material and is in Schottky contact with the grid electrode; the grid electrode is provided with a through hole inside; and at least part of the trench area is positioned in the through hole. Compared with the prior art, the meal grid electrode completely enclosing a trench area is formed in the metal-semiconductor field effect transistor so as to fully prevent the generation of leakage current.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor devices, in particular to a structure of a metal-semiconductor field-effect transistor. Background technique [0002] Metal-Semiconductor-Field-Effect-Transistor (MESFET) is a common transistor that is widely used in modern semiconductor devices. MESFET has current-voltage characteristics similar to Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFE). However, in the gate part of the device, the MESFET uses a metal-semiconductor Schottky contact to replace the MOS structure of the MOSFET; and in the source and drain parts, the MESFET replaces the p-n junction in the MOSFET with an ohmic contact. MESFET, like other field effect devices, has a negative temperature coefficient at high current, that is, the current decreases with the increase of temperature. Therefore, even when using large-sized active devices or connecting many devices in parallel, thermal stability can still be ma...

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Problems solved by technology

[0004] The MESFET with the above structure will generate leakage current, especially when the size of semiconductor devices becomes smaller and smaller, this leakage current becomes more and more obvious

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