63 results about "Gate effect" patented technology

The present invention discloses a ferroelectric transistor having a conductive oxide in the place of the gate dielectric. The conductive oxide gate ferroelectric transistor can have a three-layer metal/ferroelectric/metal or a two-layer metal/ferroelectric on top of the conductive oxide gate. By replacing the gate dielectric with a conductive oxide, the bottom gate of the ferroelectric layer is conductive through the conductive oxide to the silicon substrate, thus minimizing the floating gate effect. The memory retention degradation related to the leakage current associated with the charges trapped within the floating gate is eliminated. The fabrication of the ferroelectric transistor by a gate etching process or a replacement gate process is also disclosed.

A gate control and communication system of the invention including a base unit located within a premises, a gate receiver unit positioned next to a remotely located gate, and a gate control unit located next to the gate. The base unit provides for voice communications with an individual at the gate and for issuing of commands to control the gate. The gate receiver unit includes a switching device which, in response to commands directs the opening and closing of the gate. The gate control unit includes a call button for initiating voice communication with the base unit and a keypad for entering an identification code or password.

SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate structure. MESFETS with a selectively doped p-type buffer layer are also provided. Utilization of such a buffer layer may reduce output conductance by a factor of 3 and produce a 3 db increase in power gain over SiC MESFETs with conventional p-type buffer layers. A ground contact may also be provided to the p-type buffer layer and the p-type buffer layer may be made of two p-type layers with the layer formed on the substrate having a higher dopant concentration. SiC MESFETs according to embodiments of the present invention may also utilize chromium as a Schottky gate material. Furthermore, an oxide-nitride-oxide (ONO) passivation layer may be utilized to reduce surface effects in SiC MESFETs. Also, source and drain ohmic contacts may be formed directly on the n-type channel layer, thus, the n⁺ regions need not be fabricated and the steps associated with such fabrication may be eliminated from the fabrication process. Methods of fabricating such SiC MESFETs and gate structures for SiC FETs as well as passivation layers are also disclosed.

A gate drive circuit of a display device includes a plurality of stages, each stage being coupled to at least one other stage. A current stage among the stages includes a gate section, a carry section, a buffer section, and a reset section. The gate section generates a current gate signal and the carry section generates a current carry signal. The buffer section receives a previous carry signal from a previous stage, and then turns on the gate section and the carry section. The reset section receives a next carry signal from next stages, and then turns off the gate section and the carry section. As the current stage is reset in response to the next carry signal, the function of the gate drive circuit is increased.

Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.

A mechanism is provided for gating a read access of any row in a cache access memory that has been invalidated. An address decoder in the cache access memory sends a memory access to a non-gated wordline driver and a gated wordline driver associated with the memory access. The non-gated wordline driver outputs the data stored in a valid bit memory cell to the gated wordline driver in response to the non-gated wordline driver determining the memory access as a read access. The gated wordline driver determines whether the data from the valid bit memory cell from the non-gated wordline driver indicates either valid data or invalid data in response to the gated wordline driver determining the memory access as a read access and denies an output of the data in a row of memory cells associated with the gated wordline driver in response to the data being invalid.

The invention relates to a dual-passage magnetorheological damper with passage gating capability; a working cylinder, a piston body, an excitation component, an magnetic shield sleeve, a piston rod, a guiding ring, a sealing component, a compensating device and the like are jointly compose the whole dual-passage magnetorheological damper; the structural design ensures the realization of passage gating capability of the dual-passage magnetorheological damper and greatly simplifies the design method of the existing magnetorheological damper; the clearance between the piston component and the excitation component forms an internal passage while the clearance between the piston component and the working cylinder forms an external passage; when external excitation current is not applied, the magnetorheological fluid mainly passes through the internal passage and then the damping force is minimum; when the excitation current achieves saturation, the magnetorheological fluid mainly passes through the external passage and then the damping force is maximum. By the passage gating effect of the flowing of the magnetorheological fluid, the stepless change between the minimum value and the maximum value of the damping force is realized.

A fan structure is disclosed to include a fan holder holding a fan motor and a fan blade, a bottom cover frame, which has smoothly arched bottom wall, a horizontal mounting flange extending around the smoothly arched bottom wall and mounted in one frame sash of a light steel structure of a ceiling, a vertical connection flange connected to the top cover shell of the fan holder, a circular center opening corresponding to the fan blade, ventilation holes spaced around the circular center opening and a fence disposed above the circular center opening and surrounding the fan blade defining with the top cover shell of the fan holder a space for causing a gate effect during rotation of the fan blade, and a grille mounted in the circular center opening of the bottom cover shell for output of currents of air caused by the fan blade.

A method of forming a split gate field effect transistor and a structure of the split gate field effect transistor are provided. The method of forming the split gate effect transistor firstly provides a substrate having a pair of floating gates, a first conductive material layer between the pair of floating gates, and a first dielectric layer above the first conductive material layer. Then a control gate is formed. The control gate has a second dielectric layer above the control gate, wherein the control gate is self-aligned to the pair of floating gates by using the first and second dielectric layers as an etching hard mask. Finally, a pair of source/drain regions are formed into said substrate and beside said pair of floating gates and said control gate.

The invention relates to an ECO (Engineering Change Order) optimization method of a multiplier based on standard cell library extension. The traditional optimization method is limited in finite drive capability of the standard cells in the library, and cannot realize the shortest path delay. The ECO optimization method comprises the steps as follows: firstly, generating a layout of an extension unit, and characterizing the extension unit to obtain an extension unit library, wherein the characterizing the extension unit comprises characterizing the delay information, characterizing an input port capacitor, characterizing the power consumption, characterizing the area and characterizing a performance function; secondly, performing time series analysis on the multiplier to obtain a key path of the multiplier; and lastly, enabling the gate effects of all stages of the key path of the multiplier to be the same by using the extension unit library so as to obtain the shortest path delay. According to the ECO optimization method, on the premise of not remarkably increasing the design cycle, the key path of the multiplier is analyzed, the shortest path delay is realized, and the performance of the multiplier is improved; in addition, the design automation is conveniently implemented, and the ECO optimization method is also suitable for the rear-end ECO optimization of other digital systems.

The invention discloses a plasma processing apparatus capable of reducing a gate effect. A lifting ring that can move up and down and encircles gas spraying head is arranged in a plasma processing cavity. A metal baffle plate is fixedly arranged at one side, approaching the side wall of the processing cavity, of the lifting ring and preferably, an aluminum metal baffle plate made of the same material as that of the side wall of the processing cavity is used, so that the metal baffle plate can shield a gate opening of the side wall of the processing cavity when the lifting ring descends. Therefore, a technical problem that electrical field distribution in the processing cavity is not uniform due to the gate opening of the side wall of the processing cavity can be solved. According to the technical scheme, the structure of the apparatus is simple. On the basis of the existing lifting ring, the lifting ring and the metal baffle plate are fixedly connected by a bolt or by cutting a groove for embedding the metal baffle plate in one side, approaching the side wall of the processing cavity, of the lifting ring. On the basis of the simple structure, the electric field distribution at the gate opening can be effectively adjusted, thereby effectively adjusting the electric field distribution uniformity in the processing cavity.

The invention discloses a high-frequency clock frequency detection structure circuit for resisting an attack chip. The circuit comprises two D triggers which are connected in series and are triggered by a rising edge, three two-input AND gate, a delay unit D, an OR gate, a 10-bit asynchronous reset binary addition counter CT, a 10-bit latch and a 10-bit digital comparer DCMP. The two D triggers which are triggered by the rising edge, and the three two-input AND gate form a gate control clock structure. The delay unit D is formed by connecting the even number of phase inverters in series. Delay time is controlled by adjusting the number of the phase inverters. Two 10-bit registers, a frequency upper limit register H and a frequency lower limit register L, are contained in the10-bit digital comparer DCMP. The delay unit D or the OR gate forms a delay reset structure. An internal low-frequency clock is taken as a counting gate, the number of high-frequency clock periods is counted in fixed time, and the high-frequency clock frequency is deduced. When the obtained frequency exceeds a normal working frequency range, an alarm signal is generated.

A semiconductor element having a high breakdown voltage includes a substrate, a buffer layer, a semiconductor composite layer and a bias electrode. The buffer layer disposed on the substrate includes a high edge dislocation defect density area. The semiconductor composite layer disposed on the buffer layer includes a second high edge dislocation defect density area formed due to the first high edge dislocation defect density area. The bias electrode is disposed on the semiconductor composite layer. A virtual gate effect of defect energy level capturing electrons is generated due to the first and second high edge dislocation defect density areas, such that an extended depletion region expanded from the bias electrode is formed at the semiconductor composite layer. When the bias electrode receives a reverse bias, the extended depletion region reduces a leakage current and increases the breakdown voltage of the semiconductor element.

The present invention discloses a common-source (common-emitter) common-gate amplifier. The common-source (common-emitter) common-gate amplifier comprises a common-source (common-emitter) transistor, a common-gate transistor, an output load and a substrate biasing circuit. The common-source (common-emitter) transistor receives an input signal. The common-gate transistor sends an output signal and is connected to the output load. The amplifier has a substrate end to which the substrate biasing circuit is connected. As compared with the prior art, the present invention realizes a common-source (common-emitter) common-gate amplifier circuit with a separately biased substrate. The back-gate effect of a common-gate device is eliminated so as to improve the amplifier gain, and a direct connection between a source of the common-gate device and the substrate is also avoided so as to increase parasitic capacitance Cgb from the substrate to the gate, thereby improving the bandwidth and the gain of the amplifier. In addition, since the present invention introduces a reconfigurable biasing circuit, the linearity/noise/stray properties of a signal processing channel are balanced during the circuit switching, a good balance between flexibility and complexity is achieved, and significant improvements are made to the power consumption and area.

A dual dielectric tri-gate field effect transistor, a method of fabricating a dual dielectric tri-gate field effect transistor, and a method of operating a dual dielectric tri-gate effect transistor are disclosed. In one embodiment, the dual dielectric tri-gate transistor comprises a substrate, an insulating layer on the substrate, and at least one semiconductor fin. A first dielectric having a first dielectric constant extends over sidewalls of the fin, and a metal layer extends over the first dielectric, and a second dielectric having a second dielectric constant is on a top surface of the fin. A gate electrode extends over the fin and the first and second dielectrics. The gate electrode and the first dielectric layer form first and second gates having a threshold voltage Vt1, and the gate electrode and the second dielectric layer form a third gate having a threshold voltage Vt2 different than Vt1.

The invention discloses an HEMT device with a multi-metal gate structure and a preparation method thereof. The device comprises an AlGaN/GaN epitaxy layer; the two ends of the upper surface of the AlGaN/GaN epitaxy layer are connected with a source electrode and a drain electrode respectively; a gate electrode is arranged between the source electrode and the drain electrode at the place close to the source electrode side; and a first layer of metal X of the gate electrode is deposited in an electron beam evaporation mode, a second layer of metal Y of the gate electrode is deposited in a magnetron sputtering mode, the work function of the second layer of metal Y of the gate electrode is higher than that of the first layer of metal X, photoetching is not needed, and a metal structure which is formed after the gate electrode is stripped and makes contact with (Al)GaN is Y/X/Y. The multi-metal gate structure is in contact with (Al)GaN, so that the electric field is redistributed, the peakvalue of the electric field at the gate edge near the drain is reduced, and the breakdown voltage of the device is improved; and meanwhile, the lower electric field peak value of the gate edge weakensgate injection electrons to form a virtual gate effect, so that current collapse of the device is reduced, and the dynamic performance of the device is improved.

The invention provides a microphone amplifier circuit, which comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a diode and a resistor, and is characterized in that a grid electrode of the first transistor acts as an input end of the microphone amplifier circuit, and a source electrode of the second transistor acts as an output end of the microphone amplifier circuit. The fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor and the resistor form a bias circuit which is used for generating bias current and providing required current for the first transistor M1 and the second transistor M2 which act as source followers, and the second transistor M2 adopts a deep-N-well NMOS (N-channel metal oxide semiconductor) transistor to generate a back gate effect. Compared with related technologies, the microphone amplifier circuit provided by the invention has the advantages of low current consumption and high SNR (Signal to Noise Ratio).

The invention relates to a silicon-on-insulator (SOI)/metal oxide semiconductor (MOS) device structure for connecting negative voltage on back gate through a negative charge pump and a manufacturing method. The manufacturing method is characterized in that the front surface of an SOI/MOS device silicon film is perforated, a contact hole runs through a buried oxide layer, and a substrate is connected to the negative charge pump on the surface of the SOI/MOS device, so that the back gate effect of the partially-use-up SOI/MOS device under the radiation condition can be improved. The basic principle for designing the SOI/MOS device structure is that a back substrate is connected with the negative voltage, so that the distribution of an electric field inside the SOI/MOS device buried oxide layer is changed so as to influence the accumulation of positive charges on the interface of the back gate under the radiation condition, and the influence of the back gate effect caused by the radiation total dose on the performance of the device can be eliminated. Due to the adoption of the method, not only is the problem that the voltage of the back substrate of the SOI/MOS device is uncertain solved, but also the additional technique reinforcement for the back gate is not required in the manufacturing process of the device, and the process steps can be simplified. The back gate is connected with the negative voltage, so that the total dose resistance of the partially-use-up SOI/MOS circuit can be improved, and the performance of other circuits on the surface is not influenced.