2results about How to "Good barrier" patented technology

The utility model discloses a photovoltaic panel and photovoltaic module are applied to photovoltaic technical field, and photovoltaic panel includes the front glass, cell piece and back glass of laminated arrangement, and the front glass includes: front glass body and first front film layer, and first front film layer is located the side of front glass body close to cell piece, and back glass includes: back glass body and first back film layer, and first back film layer is located the side of back glass body close to cell piece, and first front film layer and / or first back film layer include laminatedly arranged first barrier layer and second barrier layer, and first barrier layer is close to cell piece setting, and the refractive index of first barrier layer is less than the refractive index of second barrier layer. The photovoltaic panel provided by the utility model has the function of increasing the penetration for the light entering the inside of photovoltaic panel, improves the utilization of light energy, has the good blocking effect to the metal ions such as sodium ion, calcium ion from glass, and improves the PID resistance of the photovoltaic panel.

The invention discloses a semiconductor structure and a corresponding chip and product. The structure comprises a silicon-based integrated circuit and a bump structure arranged on the silicon-based integrated circuit. The bump structure sequentially comprises a UBM layer, a copper conductor layer, a nickel conductor layer and a gold conductor layer. The exposed side walls of the UBM layer, the copper conductor layer and the nickel conductor layer are coated with a metal protection layer composed of palladium, palladium alloy, platinum or platinum alloy, and the protection layer does not cover the gold conductor layer. According to the preparation method, the step-shaped side wall is formed through etching steps in a specific sequence, selective self-growth of the protective layer on the titanium / copper / nickel side wall is achieved through chemical plating based on metal equilibrium potential difference, and the protective layer is not deposited on the gold surface. The problems of poor welding and short circuit caused by oxide generated by side wall oxidation and copper diffusion of the copper-nickel-gold bump are effectively solved, the long-term reliability is remarkably improved, meanwhile, the using amount of precious metal is small, the technology is ingenious, and the method is particularly suitable for the high-end display field of liquid crystal driving chips and the like.