Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test

A DC test and fixture technology, applied in the direction of single semiconductor device testing, measuring device housing, etc., can solve the problems of device burning, affecting the normal operation of the device DC test, and increasing IDSS, so as to improve the test efficiency and eliminate the device self-excitation phenomenon. Effect

Active Publication Date: 2011-04-20
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After self-excitation occurs, the device under test generates microwave power output without input microwave power, causing I DSS The sudde

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test
  • Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test
  • Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings and specific implementations in the embodiments of the present invention. Obviously, The described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0015] See figure 1 , figure 2 with image 3 It can be seen that the fixture of the present invention includes a PCB board 10 with a filter circuit and a metal plate 11 carrying the PCB board 10; the metal plate 11 is provided with a groove 8 for fixing the SiC MESFET device under test. The PC...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a clamp used for a SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test, belonging to the field of field effect transistor tests. The clamp comprises a PCB (Printed Circuit Board) distributed with a filter circuit and a metal board carrying the PCB, wherein the metal board is provided with a groove for fixing a SiC MESFET device to be tested, the PCB is provided with a through hole corresponding to the groove, the filter circuit includes a grid filter circuit and a drain filter circuit, the output ends of the grid filter circuit and the grain filter circuit are respectively connected with a grid transmission wire and a drain transmission wire through offset lines, one ends of the grid transmission wire and the drain transmission wire are respectively provided with a contact respectively connected with a grid electrode and a drain electrode of the SiC MESFET device to be tested, and the other ends of the grid transmission wire and the drain transmission wire are respectively provided with a self-excitation prevention module. The clamp can eliminate self-excitation of the device by the self-excitation prevention modules, improve device test efficiency and accumulate valuable data for the representation of device characteristics.

Description

Technical field [0001] The invention relates to a fixture for field effect transistor testing, in particular to a fixture for SiC MESFET (Metal-Semiconductor Field Effect Transistor, metal-semiconductor field effect transistor) DC test. Background technique [0002] SiC material has excellent characteristics such as wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity, etc., which determines its application in the production of semiconductor microwave power devices (especially MESFET). trend. The microwave SiC MESFET made of SiC material has the characteristics of high-voltage operation, high power density, and high-temperature operation. In recent years, it has become the focus of wide-bandgap semiconductor research. Generally, in order to characterize the performance of SiC MESFET devices, it is necessary to measure its DC characteristics. The measured DC characteristic parameters include: saturation current ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R1/04G01R31/26
Inventor 默江辉王勇李静强王翔付兴昌杨克武
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products