Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test

Abstract

The invention discloses a clamp used for a SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test, belonging to the field of field effect transistor tests. The clamp comprises a PCB (Printed Circuit Board) distributed with a filter circuit and a metal board carrying the PCB, wherein the metal board is provided with a groove for fixing a SiC MESFET device to be tested, the PCB is provided with a through hole corresponding to the groove, the filter circuit includes a grid filter circuit and a drain filter circuit, the output ends of the grid filter circuit and the grain filter circuit are respectively connected with a grid transmission wire and a drain transmission wire through offset lines, one ends of the grid transmission wire and the drain transmission wire are respectively provided with a contact respectively connected with a grid electrode and a drain electrode of the SiC MESFET device to be tested, and the other ends of the grid transmission wire and the drain transmission wire are respectively provided with a self-excitation prevention module. The clamp can eliminate self-excitation of the device by the self-excitation prevention modules, improve device test efficiency and accumulate valuable data for the representation of device characteristics.

Description

Technical field [0001] The invention relates to a fixture for field effect transistor testing, in particular to a fixture for SiC MESFET (Metal-Semiconductor Field Effect Transistor, metal-semiconductor field effect transistor) DC test. Background technique [0002] SiC material has excellent characteristics such as wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity, etc., which determines its application in the production of semiconductor microwave power devices (especially MESFET). trend. The microwave SiC MESFET made of SiC material has the characteristics of high-voltage operation, high power density, and high-temperature operation. In recent years, it has become the focus of wide-bandgap semiconductor research. Generally, in order to characterize the performance of SiC MESFET devices, it is necessary to measure its DC characteristics. The measured DC characteristic parameters include: saturation current ...

AI Technical Summary

Problems solved by technology

After self-excitation occurs, the device under test generates microwave power output without input microwave power, causing I DSS The sudde

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