Clamp used for SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test

Abstract

The invention discloses a clamp used for a SiC MESFET (Metal Semiconductor Field Effect Transistor) direct current test, belonging to the field of field effect transistor tests. The clamp comprises a PCB (Printed Circuit Board) distributed with a filter circuit and a metal board carrying the PCB, wherein the metal board is provided with a groove for fixing a SiCMESFET device to be tested, the PCB is provided with a through hole corresponding to the groove, the filter circuit includes a grid filter circuit and a drain filter circuit, the output ends of the grid filter circuit and the grain filter circuit are respectively connected with a grid transmission wire and a drain transmission wire through offset lines, one ends of the grid transmission wire and the drain transmission wire are respectively provided with a contact respectively connected with a grid electrode and a drain electrode of the SiC MESFET device to be tested, and the other ends of the grid transmission wire and the drain transmission wire are respectively provided with a self-excitation prevention module. The clamp can eliminate self-excitation of the device by the self-excitation prevention modules, improve device test efficiency and accumulate valuable data for the representation of device characteristics.

Description

technical field [0001] The invention relates to a fixture for testing a field effect transistor, in particular to a fixture for direct current testing of a SiC MESFET (Metal-Semiconductor Field Effect Transistor, Metal-Semiconductor Field Effect Transistor). Background technique [0002] Because of its excellent characteristics such as wide bandgap, high critical breakdown electric field, high thermal conductivity, and high carrier saturation drift velocity, SiC material determines that it is an inevitable application in the manufacture of semiconductor microwave power devices (especially MESFET). trend. The microwave SiC MESFET made of SiC material has the characteristics of high voltage operation, high power density and high temperature operation, and has become the focus of research on wide bandgap semiconductors in recent years. Usually, in order to characterize the performance of SiC MESFET devices, it is necessary to measure its DC characteristics. The measured DC ch...

AI Technical Summary

Problems solved by technology

After self-excitation occurs, the device under test generates microwave power output without input microwave power, causing I DSS The sudden increase of the device can easily cause the device to burn out, which seriously affects the normal operation of the DC test of the device.

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