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Graphene high-sensitivity photoelectric detector and preparation method thereof

A photodetector and high-sensitivity technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low responsivity, low detection sensitivity, and slow response time of photodetectors, and achieve easy large-area integration and quantum efficiency. High, reliable and long life effect

Active Publication Date: 2021-04-23
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Through the above analysis, the existing problems and defects of the prior art are: low responsivity, slow response time, and low detection sensitivity of existing photodetectors

Method used

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  • Graphene high-sensitivity photoelectric detector and preparation method thereof
  • Graphene high-sensitivity photoelectric detector and preparation method thereof
  • Graphene high-sensitivity photoelectric detector and preparation method thereof

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preparation example Construction

[0052] Such as figure 1 As shown, the preparation method of the graphene high-sensitivity photodetector provided by the embodiment of the present invention comprises the following steps:

[0053] S101, prepare a composite substrate; oxidize and grow an isolation layer at 700-800° C. on the prepared composite substrate;

[0054] S102, using an electron beam process to cover the graphene contact electrode on the isolation layer; preparing a carbon quantum dot solution, and ultrasonically dispersing the prepared carbon quantum dot solution;

[0055] S103, spin-coat carbon quantum dots on the isolation layer covering the graphene contact electrode by spin coating; prepare a graphene film on a copper foil substrate;

[0056] S104, transferring the prepared graphene film to cover the surface of the carbon quantum dot layer; photoetching a reflective layer pattern on the surface of the graphene film, and growing a silicon dioxide film by electron beam evaporation technology.

[005...

Embodiment 1

[0062] The preparation method of the graphene high-sensitivity photodetector provided by the embodiment of the present invention is as follows: figure 1 As shown, as a preferred embodiment, such as figure 2 As shown, the preparation method of the composite substrate provided by the embodiment of the present invention includes:

[0063] S201, etching a concave portion on the hard substrate, etching a convex portion with the same shape as the formed concave portion on the brittle substrate; respectively polishing the bonding surfaces of the concave portion of the hard substrate and the convex portion of the brittle substrate;

[0064] S202, place the bonding surface in deionized water for ultrasonic cleaning, apply a bonding liquid on the cleaned bonding surface, align the concave portion of the hard substrate with the convex portion of the brittle substrate, and place the hard substrate Bonding to brittle substrates;

[0065] S203, anneal at 160-200°C for 200-220min in an in...

Embodiment 2

[0070] The preparation method of the graphene high-sensitivity photodetector provided by the embodiment of the present invention is as follows: figure 1 As shown, as a preferred embodiment, such as image 3 As shown, the method for covering the graphene contact electrode on the isolation layer using the electron beam process provided by the embodiment of the present invention includes:

[0071] S301, growing a first dielectric layer on the upper surface of the isolation layer; implanting silicon ions and / or indium ions into the region of the first dielectric layer corresponding to the graphene contact electrode region and the graphene contact electrode region of the isolation layer ;

[0072] S302, growing a second dielectric layer on the upper surface of the first dielectric layer; coating a second photoresist layer on the upper surface of the part of the second dielectric layer corresponding to the first region;

[0073] S303, respectively removing the parts of the first d...

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Abstract

The invention belongs to the technical field of photoelectric devices, and discloses a graphene high-sensitivity photoelectric detector and a preparation method thereof. The graphene high-sensitivity photoelectric detector comprises a composite substrate, an isolation layer, a graphene contact electrode, carbon quantum dots, a graphene film and an anti-reflection layer; the isolation layer is located on the composite substrate; the electrode is positioned on the isolation layer; the carbon quantum dots are positioned on the electrode; the graphene film is positioned on the electrode; the surface of the graphene film is covered with an anti-reflection layer; the composite substrate is formed by bonding a hard substrate and a brittle substrate; the hard substrate is made of silicon dioxide, and the brittle substrate is made of InP or Ge; and the anti-reflection layer is a transparent film composed of silicon dioxide. The prepared photoelectric detector is ultrathin, easy to integrate in a large area and high in sensitivity, the response speed of the photoelectric detector can be increased, and the photoelectric detector has wide application prospects in the fields of ray measurement and detection, industrial automatic control, photometers and the like.

Description

technical field [0001] The invention belongs to the technical field of photoelectric devices, in particular to a graphene high-sensitivity photodetector and a preparation method thereof. Background technique [0002] At present, photodetectors can convert light signals into electrical signals based on the photoelectric effect. Photodetectors are widely used in various fields of military and national economy. In the visible light or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. In terms of household appliances, it can be used for TV, mobile phone backlight adjustment, and energy-saving control of induction lighting tools. [0003] Conventional semiconductor photodetectors have problems such as low responsivity, slow response time, and low detection sensitivity. For example, traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, and indium gallium ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/028H01L31/0216H01L31/0224H01L31/101H01L31/18
CPCH01L31/035218H01L31/028H01L31/02161H01L31/022408H01L31/101H01L31/1804Y02P70/50
Inventor 陈长鑫周庆萍陈志刚李欣悦何卓洋贺志岩
Owner SHANGHAI JIAO TONG UNIV
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