Groove type power device and manufacturing method thereof

A technology for power devices and manufacturing methods, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc. Effect of Stabilizing Threshold Voltage and Breakdown Voltage

Pending Publication Date: 2021-06-25
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a trench type power device and its manufacturing method, w

Method used

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  • Groove type power device and manufacturing method thereof
  • Groove type power device and manufacturing method thereof
  • Groove type power device and manufacturing method thereof

Examples

Experimental program
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Example Embodiment

[0102] Example one

[0103] In this embodiment, a method of fabricating a trench type power device is provided. figure 1 The process flow diagram showing the method, including the following steps:

[0104] See figure 2 Provide a substrate that sequentially, the substrate, which includes a first conductive type of heavy doped layer 101 and a first conductivity type light doped abutting extension layer 102.

[0105] As an example, the first conductivity type may be an n-type, or may be a p-type, and when the first conductivity type is an n-type, the second conductivity type is corresponding to the p-type, and when the first conductivity type When the P is type P, the second conductivity type described below is n-type. In the present embodiment, the first conductive type of recombined abduction layer 101 is an example of N-type recombination, the first conductive type lightly doped extension 102 as an N-type silicon as an example, the first conductive The doping concentration of the ...

Example Embodiment

[0139] Example 2

[0140] In this embodiment, a trench type power device is provided, see Figure 18 The cross-sectional structural diagram of the device is shown, including substrate, cell region trench, terminal region trench, electrostatic protection region dielectric layer 107a, gate dielectric layer 108, electrostatic protection zone polysilicon layer 109a, first conductivity type cell region Trench gate 109b, the first conductive type terminal area trench polysilicon 109c, the second conductive type body region 111, and the first conductivity type source region 112b, wherein the substrate is subsequently, the first conductivity type is repeatedly doped. The layer 101 and the first conductivity type are mildly doped; the elemental zone trench and the terminal region groove are located in the light doped epitaxial layer 102; the electrostatic protection zone dielectric layer 107A is located in the Lightly doped with elongate layer 102; the gate dielectric layer 108 is located o...

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Abstract

The invention provides a groove type power device and a manufacturing method thereof. The method comprises the following steps: providing a substrate sequentially comprising a first conductive type heavily doped layer and a first conductive type lightly doped epitaxial layer from bottom to top; forming a cellular region groove and a terminal region groove in the lightly doped epitaxial layer; forming a gate dielectric layer on the side wall and the bottom surface of the groove and the top surface of the lightly doped epitaxial layer; forming a polycrystalline silicon layer so as to fill the cellular region groove and the terminal region groove, and carrying out second conduction type doping on the polycrystalline silicon layer; etching the polycrystalline silicon layer until the polycrystalline silicon layer is flush with the top surface of the lightly doped epitaxial layer to obtain a cellular region groove gate and terminal region groove polycrystalline silicon; performing first conduction type doping on the cellular region groove gate and the terminal region groove polycrystalline silicon; forming a body region in the lightly doped epitaxial layer; and forming a source region in the body region. According to the invention, the groove type terminal is adopted, and body region injection can be carried out by adopting relatively high energy, so that the device has more stable threshold voltage and breakdown voltage.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a trench type power device and a manufacturing method thereof. Background technique [0002] Trench MOSFET power devices have a wide range of applications due to their low on-resistance, fast switching speed and good avalanche resistance. At the same time, due to the requirements of specific applications, higher requirements are placed on the anti-static impact of trench MOSFET devices, so it is necessary to design trench devices with an Electro-Static discharge (ESD) structure. At present, the conventional device process with ESD structure is relatively complicated. In order to form the terminal junction region, trench, ESD polysilicon, source region, contact hole, electrode and passivation layer, a total of seven photolithography operations are required. And conventional devices with ESD structure use field limiting ring plus field plate as the termi...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L29/423H01L29/78H01L27/02
CPCH01L29/66477H01L29/7838H01L29/0607H01L29/0684H01L29/4236H01L27/0255H01L27/0296
Inventor 陈雪萌杨林森王艳颖
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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