43 results about "Transistor count" patented technology

Methods and systems for optimized pruning and structuring of trained convolutional neural networks are provided. In some methods, the weight matrices of one or more convolutional layers of a trained CNN model are profiled and a weight distribution is determined. Based on this, a pruning threshold may be determined, and utilized to prune weights of the matrices whose values are below the threshold. This may be iteratively repeated until an optimal tradeoff of model reduction vs accuracy is achieved. Resulting pruned models may be utilized in resource constrained applications, such as in edge or IoT devices, or may be utilized to develop optimized, custom circuits or chips with reduced transistor count that perform the classification task of the trained CNN model.

A gate driving circuit includes a first gate driving circuit and a second gate driving circuit. The first driving circuit includes 1st to Nth first shift registers that are configured to output 1st to Nth first scan signals to N number of scan lines, respectively. The second driving circuit includes 1st to Nth second shift registers that are configured to output 1st to Nth second scan signals to the other N number of scan lines, respectively. The number of transistors in each of the 1st to Nth second shift registers is less than the number of transistors in each of the 1st to Nth first shift registers.

The present application relates to the field of artificial neuromorphics, and provides an artificial neuron circuit based on a volatile threshold switching device. A membrane potential generation circuit is used for generating different membrane potentials under different input currents and different external reset voltages; a slow variable generation circuit is used for generating a slow variable; a membrane potential reset circuit comprises a volatile threshold switching device and an external reset voltage excitation source; the external reset voltage excitation source is used for providing different external reset voltages, so that the membrane potential and the slow variable are changed, and a spiking behavior of biological neurons is simulated; and the volatile threshold switching device is used for realizing a membrane potential reset function. Compared with traditional CMOS-circuit-based neurons, the neuron circuit provided by the present application requires a greatly reduced number of transistors and reduced hardware and power consumption overhead, has the characteristics of simple structure, high flexibility and rich functions, and is beneficial to large-scale integration in a hardware pulse neural network.

A method for implementing a logic circuit employing a combination of binary adders of different lengths having summation and carry outputs and AND gates, comprising the steps of replacing at least one known CMOS implemented binary adder with an improved binary adder consisting of a logic block for performing summation between binary inputs of the logic block; a restoration block, connected between the output of the logic block and the output of the binary adder circuit, for compensating for voltage level losses when the output is in a high logic state or low logic state. The at least one CMOS AND gate is replaced with a high Fan-in AND gate being above a predetermined threshold, by an improved AND gate consisting of a logic block for performing an AND operation between binary inputs of the logic block; a restoration block, connected between the output of the logic block and the output of the AND gate, for compensating for voltage level losses when the output being in a high logic state or low logic state.

A comparator circuit, comprising: a first pre-amplification stage, amplifying an input signal when in a comparison state, so as to generate a first output signal; a second pre-amplification stage, switching between a reset state and the comparison state on the basis of the first output signal, amplifying the first output signal when in the comparison state, so as to generate a second output signal, and providing positive feedback for the second output signal by means of a first positive feedback structure; and a latch stage, wherein in the reset state, an output end of the latch stage is reset to a second preset level on the basis of a clock signal, and in the comparison state, a second positive feedback structure and a third positive feedback structure are controlled to be on by means of the second output signal and the clock signal, so as to provide positive feedback to the output end. The comparator circuit reduces the number of transistors connected to the clock signal, thereby suppressing jittering of the clock signal, and effectively improving comparator precision.

A multiplier cell is derived from a 1-bit full adder and an AND gate. The 1-bit full adder is derived from majority and / or minority gates. The majority and / or minority gates include non-linear polar material (e.g., ferroelectric or paraelectric material). A reset mechanism is provided to reset the nodes across the non-linear polar material. The multiplier cell is a hybrid of majority and / or minority gates and complementary metal oxide semiconductor (CMOS) based inverters and / or buffers. The adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.

The embodiment of the invention discloses a chip fault detection method, computer equipment and a storage medium, and the method comprises the steps: analyzing a circuit structure of a to-be-tested chip through a preset safety target based on the to-be-tested chip, and recognizing a fragile unit associated with the preset safety target; according to the fragile unit, an initial test vector set is generated, and the initial test vector set comprises a plurality of test vectors; determining the contribution degree of each test vector based on the number of transistors corresponding to the fragile units covered by each test vector; according to the contribution degree of each test vector, performing test vector combination on the plurality of test vectors to obtain a target test vector set; and inputting the test vectors in the target test vector set into the to-be-tested chip according to a preset rule combination for fault detection to obtain a fault detection result. According to the scheme, on the basis of not changing hardware, by optimizing the chip fault detection process, the fault detection efficiency is improved, and the high coverage rate is maintained.

This application provides a ternary logic gate circuit, a computing circuit, a chip, and an electronic device. The ternary logic gate circuit provided in this application can add 1 to and subtract 1 from an input logical value. On the basis of the ternary logic gate circuit, the ternary logic gate circuit is applied to a ternary logic circuit by using 27 single-variable functions of three-valued logic, so that a structure of the ternary logic circuit can be simplified, a quantity of transistors in the ternary logic circuit can be reduced, power consumption of the ternary logic circuit can be reduced, and computing efficiency of the ternary logic circuit can be improved.

The present invention provides a back-powered chip stacking structure and a preparation method thereof, wherein the chip stacking structure comprises two chips bonded together, and the two chips realize signal transmission through a mutually bonded signal connection layer. At the same time, in combination with the setting of the power rail and the embedded power layer, it is only necessary to form a metal interconnection layer as a back power supply layer on the back of the first chip, so that the transistors of the upper and lower chips can be powered and the transmission of electrical signals can be realized. Through the stacking design, the chip stacking structure can achieve twice the number of transistors in the same area. For example, only a 14nm process can be used to achieve the number of transistors under a 7nm process. At the same time, the second chip bonded to the first chip also acts as a temporary carrier, and there is no need to provide an additional temporary carrier, which further reduces the production cost. In addition, the process of making the back power supply channel is moved forward, so that the preparation process is carried out sequentially from bottom to top, and the process rationality is better.

The application discloses a kind of circuit, method and neural network hardware system for realizing non-monotonic activation function, belong to the technical field of neural network hardware circuit design, the circuit includes: first inverter, second inverter and logic processing unit;The input end of first inverter and second inverter is connected, as analog accumulation signal input end;First inverter and second inverter are respectively set first logic flip threshold voltage and second logic flip threshold voltage of unequal value;The two input ends of logic processing unit are respectively connected to the output end of first inverter and the output end of second inverter.The application realizes non-monotonic activation function under extremely simple circuit architecture by the combination of double threshold decision and logic processing, without analog-digital conversion module, with the advantages of less transistor number, low power consumption, easy to integrate.

A voltage generator includes a temperature-dependent voltage generator and a reference voltage node. The temperature-dependent voltage generator generates a voltage that increases with temperature and includes a first transistor stack and a second transistor stack. Each of the first transistor stack and the second transistor stack has a predetermined number of transistors. The number of the transistors of the second transistor stack is greater than the number of the transistors of the first transistor stack. The reference voltage node is connected to the temperature-dependent voltage generator and provides a reference voltage substantially independent of temperature. A method for generating the temperature-independent reference voltage is also disclosed.

This invention relates to the field of data storage technology, providing an 8.5T non-volatile random access memory (NVSRAM) cell, a memory, and a data storage method. It combines 6T SRAM cells connected to an isolation transistor to form an NVSRAM cell. This method uses fewer transistors, has a smaller chip area, and achieves high cell storage density. The data retrieval process of the NVSRAM cell does not require power-down of the SRAM cell, discharge of the data nodes, or power-on of the SRAM cell. The retrieval process is completed simply by writing data 0 to the data nodes QB of all SRAM cells, writing data 1 to the data nodes Q, and then opening the isolation transistor to write the data from the FLASH cell to the SRAM cell. This retrieval method is simple and efficient, simplifies the design of related peripheral circuits, and effectively reduces the chip manufacturing cost of NVSRAM.

The high-speed selective carry propagation adder circuit consists of a full adder that performs selective carry propagation in the critical path, rather than the conventional carry propagation method that limits operating speed. Instead of propagating the carry and using it for summation, it is proposed to propagate a selective carry in the critical path and use it for summation. As a result, the number of transistors required for the full adder cell is reduced, and high-speed operation and low power consumption are achieved by reducing parasitic resistance and capacitance. Furthermore, the proposed circuit design reduces the number of transistors required for a 1-bit full adder cell to 14 for static CMOS logic, 10 for transmission gate type, and 8 for pass transistor type. In addition, the proposed adder circuit provides a versatile and efficient solution for multi-bit adders in various logic schemes and is expected to have applications in various fields.

The present disclosure provides a touch substrate, a display device and a display system. By rearranging the layout of each transistor in the shift register, the number of transistors in the horizontal direction of the shift register is less than the number of transistors in the vertical direction, that is, the circuit of the shift register is designed in the vertical direction, which can reduce the size of the shift register in the horizontal direction, realize narrow frame design, and facilitate seamless splicing when applied to large-size panels.

An array substrate is provided. The array substrate includes a plurality of first subpixels in a first region and a plurality of second subpixels in a second region. The plurality of first subpixels include a plurality of first pixel driving circuits. The plurality of second subpixels include a plurality of second pixel driving circuits. A respective first pixel driving circuit of the plurality of first pixel driving circuits includes a smaller number of transistors than a respective second pixel driving circuit of the plurality of second pixel driving circuits. The first region has a light transmittance higher than the second region, and a subpixel density same as the second region.

The invention belongs to the technical field of semiconductors, and particularly provides a barrel type shifter based on ferroelectric field effect transistors, which comprises at least one alternative multiplexer, the alternative multiplexer comprises an N-type ferroelectric field effect transistor and a P-type ferroelectric field effect transistor, and the N-type ferroelectric field effect transistor is connected with the P-type ferroelectric field effect transistor. A drain electrode of the N-type ferroelectric field effect transistor and a source electrode of the P-type ferroelectric field effect transistor are connected to serve as an input end, a source electrode of the N-type ferroelectric field effect transistor and a drain electrode of the P-type ferroelectric field effect transistor are connected to serve as an output end, and grid electrodes of the N-type ferroelectric field effect transistor and the P-type ferroelectric field effect transistor are connected and connected with a master control signal; according to the invention, the adjustable threshold voltage and non-volatile storage characteristics of a ferroelectric field effect transistor (FeFET) are utilized, the left shift, right shift or cyclic shift function of any digit is realized in a single clock period, the number of transistors required in a traditional structure is effectively reduced, work under zero gate voltage is supported, and the circuit area and static power consumption are effectively reduced.

The present disclosure relates to a signal processing device, an imaging element, and an electronic apparatus that enable further characteristic improvement. This signal processing device is provided with a comparator in which a differential pair is configured from a first transistor group in which a first input signal is input to a gate terminal via a first capacitor, and a second transistor group in which a second input signal, the magnitude relationship of which with the first input signal is to be compared, is input to a gate terminal via a second capacitor. The signal processing device is configured such that the number of transistors in which the first input signal is input to the gate terminal, among the first transistor group, can be switched, and the number of transistors in which the second input signal is input to the gate terminal, among the second transistor group, can be switched. The present technology can be applied to, for example, a CMOS image sensor.

A gate driving circuit includes a first gate driving circuit and a second gate driving circuit. The first driving circuit includes 1st to Nth first shift registers that are configured to output 1st to Nth first scan signals to N number of scan lines, respectively. The second driving circuit includes 1st to Nth second shift registers that are configured to output 1st to Nth second scan signals to the other N number of scan lines, respectively. The number of transistors in each of the 1st to Nth second shift registers is less than the number of transistors in each of the 1st to Nth first shift registers.

The invention discloses an ultrasonic sensor pixel circuit structure which comprises at least two pixel units, and each pixel unit comprises a piezoelectric material and an ultrasonic transceiving selector connected with a lower electrode of the piezoelectric material; the common circuit module comprises an ultrasonic transmitting and receiving controller, a source follower and a row and column selector; the ultrasonic transceiving selector of any pixel unit is connected to a common node of the common circuit module; the ultrasonic transceiving controller is connected with the common node and an external driving signal, a grid electrode of the source follower is connected with the common node, and an output end of the source follower is connected to the row and column selector; through the common circuit module of the plurality of pixel units, the number of transistors required by a single pixel is greatly reduced, more pixels can be accommodated under the same array area, and the pixel density of the sensor is improved, so that the resolution and the quality of sensing information such as fingerprint images are improved, and the power consumption is reduced.

The invention discloses an index and maximum value search unit circuit, array circuit and module for floating-point number calculation, and relates to the technical field of in-memory floating-point number calculation circuits. The invention discloses an index and maximum value searching unit circuit for floating-point number calculation. The index and maximum value searching unit circuit comprises N index and array units ISU1, j-ISUN, j, three phase inverters INV1j-INV3j and an either-or selector MUXj. ISU1, j-ISUN, j are distributed in an N * 1 matrix and share a calculation bit line CLj, a calculation bit line ORLj + 1 and a calculation bit line NANDLj + 1. The invention provides an index and maximum value search unit circuit for floating-point number calculation, which adopts a double-column parallel search architecture, determines the maximum value of a right column by using the maximum value found by a left column, can significantly reduce the search period, greatly improves the search speed, increases a small number of transistors, and avoids overlarge area overhead.

The invention discloses a power amplifier, relates to the technical field of base stations, and aims to solve the problem of low efficiency of a traditional power amplifier in an output power backoff region in the prior art. The power amplifier comprises a driving amplifier, a power divider and an inversion Doherty amplifier, the inversion Doherty amplifier comprises a carrier amplifier and a peak amplifier, the driving amplifier receives radio frequency signals and is connected with the power divider, a first output end of the power divider is connected with the carrier amplifier, a second output end of the power divider is connected with the peak amplifier, and a third output end of the power divider is connected with the peak amplifier. The first output end of the power divider is connected with the carrier amplifier, the second output end of the power divider is connected with the peak amplifier, the carrier amplifier comprises a first transistor amplification module, the peak amplifier comprises a second transistor amplification module, and the ratio of the number of transistors of the first transistor amplification module to the number of transistors of the second transistor amplification module is a preset ratio. The preset ratio is less than 1.

The present application provides a liquid crystal display device, comprising a plurality of pixels, a plurality of gate lines and a plurality of data lines, each pixel comprising a main pixel and a sub-pixel, and comprising only two transistors, wherein the first transistor is electrically connected to the sub-pixel, and the second transistor is electrically connected to the main pixel. In a first embodiment, a group of gate lines comprises a first gate line and a second gate line, which are electrically connected to the first transistor and the second transistor, respectively, and by controlling the switching timing of the gate line signal and the input timing of the data line signal, different grayscale signals are input to the main pixel and the sub-pixel. In a second embodiment, a group of data lines comprises a first data line and a second data line, which are electrically connected to the sub-pixel and the main pixel, respectively, and by controlling the two data lines to input different grayscale signals to the main pixel and the sub-pixel at the same time, different grayscale signals are input to the main pixel and the sub-pixel. The present application removes the common electrode and reduces the number of transistors, thereby improving the aperture ratio and the transmittance.

The present technology is related to transistor synthesis optimization during the physical design stage of EDA. Aspects of the present technology introduces new ways to restructure transistor-level netlists, such as by reducing transistor count, for digital circuit designs based on the enumeration of “don't cares” of internal nets. One aspect of the present technology includes connecting internal nets with the same truth table up to don't cares without changing the functionality of the entire circuit. With an additional connection in the netlist, optimization opportunities can be identified that may remove transistors and / or improve placement, routing, and / or timing metrics. Furthermore, optimization opportunities may be further increased by (pre)computing satisfiability don't cares at the inputs of the netlist and observability don't cares at the outputs of the netlist from the environment.

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

To provide a semiconductor device that can reduce power consumption and has a small number of transistors. [Solution] One of the source and drain is electrically connected to the first wiring, and the source and drain The other end of the rain is electrically connected to the second wiring, and the first transistor is connected to the source and drain. One end of the input is electrically connected to the first wiring, and the gate is electrically connected to the gate of the first transistor. A second transistor is electrically connected, and one of its electrodes is electrically connected to a third wire. The other electrode is a capacitance electrically connected to the other source and drain of the second transistor. It has an element and

The present disclosure provides a display base plate and a display device.The drive circuit comprises a drive control signal generation circuit and a multiple output circuit; the multiple output circuit comprises N stages of output sub-circuits, where N is an integer greater than 1; the nth output sub-circuit is electrically connected to a drive control signal output, a control voltage line, an nth control node, an nth output clock signal line, and an nth drive signal output, wherein the nth output sub-circuit is designed to control the potential of the nth control node under control of a control voltage according to the drive control signal, and to control the nth output clock signal line under control of the potential of the nth control node such that it provides an nth output clock signal to the nth drive signal output; where n is a positive integer less than or equal to N.With the present disclosure, multiple rows of gate lines can be driven by a single drive circuit, effectively reducing the number of transistors used in the drive circuit and facilitating the realization of narrow margins.

The application provides a gate driving circuit, and belongs to the technical field of display. A pull-up control module outputs an n-level control signal according to an n-4-level trigger signal. A first end of a first transistor obtains a clock signal, and a second end of the first transistor obtains a first local clock signal. The n-4-level trigger signal is opposite to the clock signal CLK. A first end of a second transistor is connected with the pull-up control module and obtains the n-level control signal. A third end of the first transistor outputs a first reverse signal, and a third end of the second transistor obtains a first reference low voltage. Through the first transistor and the second transistor, the potential of the n-level control signal is opposite to the potential of the first reverse signal under the regulation of the clock signal, the first local clock signal and the n-level control signal, the function of the inverter module is realized, the number of transistors is reduced, and the problem that the frame of the display panel is large due to the large number of transistors in the inverter module of the traditional circuit is solved.

The present disclosure provides a display panel. The display panel includes a plurality of signal lines and a test circuit. The test circuit includes a plurality of transistors electrically connected to the plurality of signal lines. The plurality of transistors are arranged in at least two groups, and the number of transistors in each of the at least two groups is less than the total number of the plurality of signal lines. Therefore, the test circuit of the display panel of the present disclosure can reduce the circuit placement space in the horizontal direction.

A compute engine for BitNet b1.58-style inference employs arrays of ultra-simple processing elements that implement ternary weights using sign selection and conditional accumulation rather than a conventional multiplier. Each processing element stores a weight encoding +1, 0, or −1, selects a non-inverted activation, a zero, or an inverted activation accordingly, and updates a saturating accumulator while skipping accumulator clocking on zero weights. The processing elements are arranged for deterministic systolic dataflow across an all-silicon domain, enabling massive replication with low transistor count per element. Optional tiles interface via first-in first-out buffers in lieu of caches to preserve timing predictability. The approach reduces area and power while sustaining multi-gigahertz operation suited to transformer inference.

The present disclosure provides a gate driving circuit and a display panel. The display panel includes a display area and a peripheral area surrounding the display area. At least one gate driving circuit is arranged in the peripheral area. The at least one gate driving circuit includes a plurality of shift register units cascaded in sequence. The plurality of shift register units include first shift register units and second shift register units. The first shift register units and the second shift register units are spaced apart from each other. The number of transistors in the first shift register units is smaller than the number of transistors in the second shift register units.