Amplification type solid-state image pickup device and driving method therefor

Abstract

A plurality of pixel groups X(n) each comprising a plurality of pixels are set, and switched capacitor amplification parts are provided in correspondence to the pixel groups, respectively. Each of the switched capacitor amplification parts has a charge detection node to which output terminals of the transfer transistors of a corresponding pixel group X(n) are connected in common, an amplification part, a reset transistor, a first capacitance element, and a select transistor. A load part common to the switched capacitor amplification parts is provided. The load part is combined with the amplification parts of the switched capacitor amplification parts to constitute inverting amplifiers, respectively. By means of the above constitution, it is capable of obtaining a noise-reduced, high-quality image and which allows transistor count per pixel to be cut, thus allowing the pixel size to be reduced.

Description

[0001] This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2004-019782 filed in Japan on Jan. 28, 2004, the entire contents of which are hereby incorporated by reference. BACKGROUND OF THE INVENTION [0002] The present invention relates to an amplification type solid-state image pickup device and a driving method therefor. More specifically, the invention relates to an amplification type solid-state image pickup device, as well as a driving method therefor, which includes a plurality of pixels each having a photoelectric conversion element and a transfer transistor for transferring signal charge of the photoelectric conversion element, where signals derived from the individual pixels are amplified and outputted to a signal line in common to the pixels. [0003] Generally, there has been wide-spreading an amplification type solid-state image pickup device which has a pixel part provided with an amplification function and a scanning circuit d...

AI Technical Summary

Benefits of technology

[0015] Accordingly, an object of the present invention is to provide an amplification type solid-state image pickup device, as well as a driving method therefor, which is capable of obtaining noise-reduced high-quality images and reducing the transistor count per pixel to miniaturize the pixel size.

Problems solved by technology

However, with the technique of JP H09-46596A, there would arise problems as shown below.

Therefore, the capacitance CFD increases with increasing number of pixels (photodiodes 101 and transfer transistors 102) connected to a common charge detection node 108, which leads to a problem that the charge-voltage conversion efficiency η decreases.

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