Provided in the present invention is a super-junction
MOSFET device, the device comprising a plurality of cellular structures. Each of the cellular structures comprises a drain terminal
electrode, an N-type drain
electrode layer, an N-type buffer layer, an N-type field stop region, a first P-type
body region, a second P-type
body region, a first P pillar, a second P pillar, an N pillar, a first N-type source region, a second N-type source region, a first P-type
body contact region, a second P-type
body contact region, a gate structure and a source terminal
electrode, wherein the N-type field stop region is located in the N-type buffer layer; the
vertical projection of the N-type field stop region on the N-type drain electrode layer is provided with a spacing region; and the
doping concentration of the N-type field stop region is higher than the
doping concentration of the N-type buffer layer. In the present invention, the N-type field stop region is introduced into the N-type buffer layer, and the
vertical projection of the N-type field stop region on the N-type drain electrode layer is provided with the spacing region, such that not only can
reverse recovery charges be reduced and a
reverse recovery softness factor be improved, but the on-resistance of a device can also be reduced without increasing the leakage current of the device.