Silicon carbide Schottky diode-based Spice model and construction method thereof

A Schottky diode, silicon carbide technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problems of system stability, output current and voltage electromagnetic oscillation, interference, etc., to accurately evaluate dynamic performance Effect
CN105550482AActive Publication Date: 2016-05-04TSINGHUA UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TSINGHUA UNIV
Publication Date
2016-05-04

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Abstract

The invention discloses a silicon carbide Schottky diode-based Spice model and a construction method thereof. The model comprises a voltage-controlled capacitor, a voltage-controlled resistor, a voltage-controlled body resistor, and a contact resistor, wherein the voltage-controlled capacitor is used for indicating the depletion layer capacitance of the silicon carbide Schottky diode; the voltage-controlled resistor is connected with the voltage-controlled capacitor in parallel and used for indicating the depletion layer current of the silicon carbide Schottky diode; the voltage-controlled body resistor is in series connection with parallel connection nodes of the voltage-controlled capacitor and the voltage-controlled resistor, and used for indicating the body resistance of the silicon carbide Schottky diode; the contact resistor is connected with the voltage-controlled body resistor in series. The silicon carbide Schottky diode-based Spice model disclosed by the invention has the advantage that the obtained diode dynamic curve is well matched with the experimental data. The model can be used for evaluating dynamic performance of the diode accurately and also used for guiding design and application of the silicon carbide Schottky diode.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, and specifically designs a Spice model based on a silicon carbide Schottky diode and a construction method thereof. Background technique

[0002] In power system applications, SiC Schottky diodes have higher switching speed and lower switching losses than Si-based PINs. However, due to the highly doped epitaxial layer concentration, the depletion layer capacitance of SiC Schottky diodes is generally larger than that of Si-based PINs. When a SiC Schottky diode is used in a chopper circuit, it will cause electromagnetic oscillation of the output current and voltage, causing system stability problems, such as electromagnetic interference and additional energy loss. The main reason for the oscillation is caused by the RLC second-order network composed of the depletion layer capacitance and depletion layer resistance of the Schottky diode, the parasitic stray inductance in the circuit, and the...

Claims

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