The application discloses a high-density Micro-
LED display bonding method with adjustable resolution and without alignment, and relates to the field of photoelectric display, comprising the following steps: first, a first
metal array containing first
metal bumps is prepared on each driving pixel of a
CMOS driving backboard, and a second
metal array containing second metal bumps is prepared on a Micro-LED epitaxial
wafer; then, based on the non-alignment type, the Micro-LED epitaxial
wafer provided with the second metal array is bonded with the
CMOS driving backboard provided with the first metal array; then, after bonding, the substrate of the Micro-LED epitaxial
wafer is peeled off to
expose a Micro-
LED display layer; finally, according to the required resolution,
photolithography etching is performed on the peeled-off Micro-
LED display layer, and a Micro-LED display pixel unit is divided; the Micro-LED display pixel unit corresponds to M driving units in the corresponding area of the
CMOS driving backboard, and a Micro-LED display array with corresponding resolution is formed. The application has low cost, greatly reduces the bonding alignment difficulty between metal bumps, and improves the picture quality and production efficiency of the Micro-LED display.