The present invention relates to a method for performing high speed
electron beam
lithography (EBL). An
electron beam source (EBS), capable of emitting an
electron beam towards the energy sensitive
resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron
beam source then forms a second pattern (P2) on the substrate. The energy and / or
dose delivered to the energy sensitive
resist during the
exposure of the first and the second pattern is dimensioned so that the threshold
dose / energy of the energy sensitive
resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by
electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of addressing each dot or hole separately.