283results about How to "Increase the number of pixels" patented technology

A method for recording information on a recording medium utilizing an interference pattern by interference between an information light modulated spatially with digital pattern information displayed on a spatial light modulator having multiple pixels and a reference light for recording. In order to provide a novel recording method capable of enhancing the recording density and the transfer rate furthermore, digital information to be recorded is represented by match / mismatch of the attributes of adjacent pixels in the spatial light modulator to produce digital pattern information.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and / or concentration changes of various analyte types in a wide variety of chemical and / or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and / or binding events associated with chemical processes relating to DNA synthesis.

A MOS or CMOS sensor with a multi-layer photodiode layer covering an array of active pixel circuits. The multi-layer photodiode layer of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and / or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. The sensor includes special features to minimize or eliminate pixel to pixel crosstalk. A micro-lens array with a micro-lens positioned above each pixel directs light illuminating the pixel toward the central portion of the pixel and away from its edges. Also, preferably carbon is added to doped amorphous silicon N or P bottom layer of the multi-layer photodiode layer to increase the electrical resistivity in the bottom layer to further discourage crosstalk. In preferred embodiments each of the pixels define a tiny surface area equal to or larger than about 3.24 square microns and smaller than or equal to about 25 square microns. Detailed descriptions are provided for two general types of sensors. The first type has a pixel count of about 0.3 to 1.9 million pixels and are especially suited for sues such as cell phone cameras. The second type with pixel count of between about 1.9 million pixels to more than 5 million pixels is especially suited for high definition television cameras.