10 results about "ISFET" patented technology

The invention relates to the technical field of molecular diagnosis and graphic processing, in particular to an electronic microarray chip dot matrix negative and positive judgment method based on an ISFET sensor. A chip hole site corresponds to an ISFET sensor, and after a hole bottom specific nucleic acid probe and a target sequence are hybridized and extended, the voltage of the sensor is changed. The method specifically comprises the following steps: data preprocessing: filtering median values of multi-frame electric signals of a hole site and taking a mean value; the dot matrix identification comprises the steps of threshold demarcation, Canny edge detection, circular Hough transform, optimal circle screening by Kdtree, array numbering and abnormal deletion processing to position a dot matrix; and calculating a result, extracting a signal difference value of the D1 stage and the D4 stage, evaluating numerical values of the positive quality control array and the to-be-detected sample array through a numerical value of the negative quality control array, and judging a final calculation result. According to the method, response changes are rapidly analyzed through image recognition, false detection and missing detection caused by numerical value differences in different arrays are reduced through multiple times of detection, and the detection accuracy is improved by selecting the most possible area through tickets.

In described examples, a biosensor device has a porous membrane with a test region that contains a test analyte. A sensor die has an ion sensing field effect transistor (ISFET) with an ion sensitive gate element located in an active sensor surface of the sensor die. The active sensor surface is in contact with the porous membrane test region. A controller is coupled to the ISFET and an interface module is coupled to the controller to provide a human readable test result.

A pH sensor includes a measurement object electrode disposed in the measurement object to control a potential of the measurement object; a measurement object power supply that applies a voltage to the measurement object electrode; a measurement ISFET including a measurement ion sensitive film; a measurement film electrode disposed in the measurement ion sensitive film to control a potential of the measurement ion sensitive film; a measurement film power supply that applies a voltage to the measurement film electrode; a capacitor connected to the measurement object electrode and the measurement film electrode to generate a potential difference between the measurement object electrode and the measurement film electrode; and a power supply control unit that controls a magnitude of the voltage output from the measurement object power supply, and that controls a magnitude of the voltage output from the measurement film power supply.

The present invention relates to closed loop pH control using a differential sensor. A closed loop system and method for controlling pH. The system includes a working electrode, a counter electrode, a reference electrode, a first ion sensitive field effect transistor (ISFET), a second ISFET, and an electronic controller. The working electrode, the counter electrode, the reference electrode, and a first sensing terminal of the first ISFET can be immersed in an active solution. A second sensing terminal of the second ISFET can be immersed in a reference solution. The electronic controller is configured to apply a first amount of current or voltage to the working electrode and determine a differential voltage between the first ISFET and the second ISFET. The electronic controller is further configured to set a second amount of current or voltage to reduce a difference between the differential voltage and a target voltage. The electronic controller is further configured to apply the second amount of current or voltage to the working electrode.

This application discloses a single-chip integrated miniature wireless pH detection device and system based on ISFET, relating to the field of in vivo pH detection technology. The device includes: a housing; a wireless sensing chip integrating a pH sensing module, the sensing interface of which is exposed to the measured environment through the housing; a signal processing module connected to the pH sensing module for processing the pH sensing signal detected by the pH sensing module; and a wireless communication and power supply module connected to the signal processing module for transmitting the pH sensing signal processed by the signal processing module and supplying power to the modules on the wireless sensing chip. This application integrates the pH detection module, signal processing module, and wireless communication module into a single on-chip system, utilizing CMOS technology, wireless power transfer technology, and backscattered reverse communication technology, effectively reducing the size of the pH detection device and improving the accuracy of pH detection.

The invention discloses an electronic microarray chip dot matrix negative and positive judgment method and system based on an ISFET sensor, and relates to the technical field of computer vision and image processing. The method comprises the following steps: firstly, acquiring the position of a chip dot matrix, a primer stage and voltage data after extension reaction; identifying and eliminating bad holes by setting a low reaction threshold value and a noise threshold value; calculating the background value and the effective signal value of each dot matrix, and finally obtaining the signal mean value of the negative quality control, the positive quality control and the target area; and finally, comparing the positive quality control mean value with a threshold value to verify the effectiveness of the experiment, and automatically judging whether the sample is positive or negative based on the comparison result of the target mean value and the threshold value. According to the invention, the automatic and quantitative interpretation of the dot matrix detection result is realized, the defects of strong subjectivity, low efficiency and easy misjudgment of manual interpretation are overcome, and the accuracy and robustness of detection are obviously improved.

An ion-sensitive field-effect transistor (ISFET) for testing a medium, wherein the ISFET comprises the following: a substrate; an active layer located on the substrate; a source region and a drain region in the active layer; a gate structure over a channel area between the drain area and the source area; a backend stack comprising a plurality of metal layers, wherein the gate structure is directly connected to a topmost metal layer of the plurality of metal layers, and the drain region and the source region are directly connected to one or more other metal layer(s) of the plurality of metal layers; and a detection layer covering the top metal layer, wherein the detection layer includes an anti-reflective coating (ARC) layer arranged to come into contact with the medium.

Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source / drain regions and a pair of second source / drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source / drain regions, and the second gate electrode is laterally between the second source / drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source / drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

An ion sensitive field effect transistor (ISFET) for testing a medium, the ISFET comprising: a substrate; the active layer is located on the substrate; a source region and a drain region in the active layer; a gate structure over the channel region between the drain region and the source region; a back-end stack comprising a plurality of metal layers wherein the gate structure is directly connected to a top metal layer of the plurality of metal layers and the drain region and the source region are directly connected to one or more other metal layers of the plurality of metal layers; and a sensing layer overlying the top metal layer wherein the sensing layer comprises an anti-reflective coating (ARC) arranged in contact with a medium.

The invention discloses an ISFET chip suitable for deep sea pH detection, a preparation method and a system. The ISFET chip comprises a silicon substrate; the oxide layers are arranged at the left end and the right end above the silicon substrate; the source electrode and the drain electrode are formed in the silicon substrate through ion implantation; the gate insulating layer covers the channel region between the source electrode and the drain electrode; the silicon nitride sensitive film layer is arranged above the gate insulating layer; the gate protection layers are arranged above the oxide layer, part of the source electrode and part of the drain electrode and at the left end and the right end above the silicon nitride sensitive film layer; the metal electrode is arranged on the contact hole, close to the oxide layer, above the source electrode and the drain electrode and is electrically connected with the source electrode and the drain electrode; and the passivation layer covers the upper surface of the gate protection layer except the middle part of the silicon nitride sensitive film layer and the metal electrode, and exposes the middle part of the silicon nitride sensitive film layer and the metal electrode. The problems that an existing ISFET chip is insufficient in sensitivity, high in power consumption and the like are solved.