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Differential circuit for reading out signal of integrated ISFET sensor based on two modes

A dual-mode, sub-circuit technology, applied in the direction of differential amplifiers, DC-coupled DC amplifiers, etc., can solve problems such as differential readout circuits for unseen signals, and achieve the effect of eliminating "common mode" errors

Active Publication Date: 2006-07-05
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

So far, the ISFET sensor signal differential readout circuit composed of standard discrete components on PCB (Printed Circuit Board) has been reported, but there is no signal differential readout circuit integrated with ISFET sensor single chip CMOS

Method used

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  • Differential circuit for reading out signal of integrated ISFET sensor based on two modes
  • Differential circuit for reading out signal of integrated ISFET sensor based on two modes
  • Differential circuit for reading out signal of integrated ISFET sensor based on two modes

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Embodiment Construction

[0034] exist figure 1 In the circuit, Ma1 is an n-type ISFET, Mb1 is an n-type MOSFET symmetrical to Ma1, and the rest of the transistors are either p-type MOSFET or n-type MOSFET as shown in the diagram. If Ma1 is replaced with p-type ISFET, figure 1 The circuit should make the corresponding complementary transformation. Co is a compensation capacitor to improve the stability of the OTA system. The current source I0 provides the bias current of the input differential stage (Ma1 and Mb1). In addition, the current sources I1a and I1b are connected to the amplifier through the switch SW, and the current mirror (M9, M8, M7, M2, M1) provides MOS transistors. The bias current I1 of Mc. The bootstrap circuit is composed of MOS tubes Ma2, Mb2 and Mc. If I1a is connected, the constant current and constant voltage conditions required by the ISFET in the linear region will be generated; if I1b is connected, the constant current required by the ISFET in the saturation region will be g...

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Abstract

Integrated ISFET signal amplifier in two modes includes following parts: difference amplifier is composed of Ma1 and Mb1; Ma2íóMb2 and Mc constitute bootstrap circuit; Current mirror image circuits M9, M8, M7, M2, M1; and source of current I1a, I1b, and I0. ISFET current type signal differential circuit includes ISFET amplifier and REFET amplifier, quasi reference electrode PRE, two pieces of follower amplifier M1 and M3. The invention is suitable to process signal input from ISFET sensor in high precision and larger dynamic range.

Description

technical field [0001] The invention relates to the technical field of differential amplifiers, in particular to an integrated ISFET sensor signal differential readout circuit based on dual modes. Background technique [0002] Various sensors composed of Ion Sensitive Field Effect Transistor ISFET (Ion Sensitive Field Effect Transistor) can be used to detect multiple biochemical indicators, such as pH, through the biochemical reaction of different sensitive film materials on the gate of ISFET and ions in the measured solution. pH and pCO 2 , pO 2 Wait. This requires that under certain working conditions, there is a one-to-one linear relationship between the port voltage or current generated by the ISFET and these biochemical indicators. [0003] The current and voltage signals generated by the ISFET generally need to be collected and amplified by the front-end detection circuit before they can be connected to the back-end electronic system to form a practical measuring in...

Claims

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Application Information

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IPC IPC(8): H03F3/45
Inventor 杨海钢魏金宝
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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