29 results about "Resistive circuits" patented technology

A phase-locked loop circuit includes a phase-frequency detector circuit, a time amplifier circuit, a control circuit, and a variable oscillator circuit, such as a voltage-controlled oscillator. The phase-frequency detector is configured to generate a phase error output indicating a phase difference between a reference signal and a feedback signal generated using an output signal. The time amplifier is configured to extend the phase difference to generate an extended phase error output. The variable oscillator is configured to use one or more control signals generated by the control circuit using the extended phase error to adjust a frequency of the output signal. The control circuit may generate a proportional control signal using a switched-resistor circuit that includes a pull-up resistor and a pull-down resistor. The control circuit may generate an integral control signal using a capacitive-shared-integration circuit that includes passive integrating components.

A power supply device includes a DC-DC converter and a ripple generator. The DC-DC converter includes: a first switch connected between an input node and a first switching node, and a second switch connected between a reference node supplying a reference voltage and the first switching node. The DC-DC converter is configured to output an output voltage adjusting the input voltage by switching operation of each of the first switch and the second switch, to an output node. The ripple generator includes a first capacitor connected to the output node, a first resistive circuit connected between the first capacitor and a second switching node, a first ripple switch connected between the second switching node and the input node, a second ripple switch connected between the second switching node and the reference node, and a third ripple switch connected between the second switching node and the output node.

A wireless power transfer (WPT) system for charging an electric vehicle is disclosed. The system includes a WPT coil, a positioning system, and control circuitry. The positioning system includes a positioning coil connected to a switch, wherein in a first switch state the switch is configured to connect the positioning coil to resistor circuitry, and in a second switch state the switch is configured to disconnect the positioning coil from the resistor circuitry. The control circuitry is configured to set the switch to the first switch state to connect the positioning coil to the resistor circuitry, activate the WPT coil to induce a voltage in the positioning coil, receive a measurement from the positioning coil, and determine a relative position between a vehicle assembly and a ground assembly of the WPT system based on the received measurement from the positioning coil.

An electronic keyboard module includes a keyboard bracket, a keyboard, a conductive film and a force sensing resistor circuit board. The keyboard includes plural keys and key height-limited posts disposed on lower surfaces of the keys. The conductive film includes an insulation layer and plural conductive regions. The conductive regions are spaced apart from each other and disposed on the insulation layer, and the insulation layer is located between the key height-limited posts and the conductive regions. The force sensing resistor circuit board includes plural electrode units disposed under the conductive regions. The conductive film is located between the keyboard and the force sensing resistor circuit board. When at least one of the keys is under a pressed state, the key height-limited post presses the conductive film, so that the conductive region corresponding to the key touches and is electrically connected to the electrode unit.

The application relates to a source adjustable resistance circuit for a high-speed differential amplifier, belonging to the technical field of high-speed analog and radio frequency integrated circuits, comprising a high-speed differential amplifier, a degeneration resistance unit and a control unit; the degeneration resistance unit is composed of a first MOS transistor; the source and the drain of the first MOS transistor are respectively connected to two source nodes of a differential pair transistor of the high-speed differential amplifier, serving as source degeneration resistance thereof, and the gate voltage of the first MOS transistor is generated by the control unit; the control unit is used for generating the gate control voltage of the first MOS transistor. The application replaces a large resistance array with a single MOS transistor, greatly reduces the area, greatly reduces the chip cost, significantly reduces the parasitic capacitance of the degeneration node to the ground, and improves the amplifier bandwidth.

The utility model belongs to power semiconductor technical field, concretely relates to a kind of gate open, the power module of independent control of turn-off resistance.The gate open, the power module of independent control of turn-off resistance includes: a plurality of gate signal terminals;The gate signal terminal is electrically connected with the gate of corresponding switch power chip through the gate resistance selection circuit being set on DBC substrate;Wherein the gate resistance selection circuit includes the first resistance circuit and the second resistance circuit in parallel;The first resistance circuit includes the first gate resistance and the first diode connected in series;The second resistance circuit includes the second gate resistance and the second diode connected in series, and the conduction direction of second diode and the first diode is opposite.The utility model realizes the ability of different gate resistance when being respectively given when device open, turn-off, and gate resistance is integrated in power device inside, reduces the use of external component, reduces the design complexity and wiring difficulty of circuit board, reduces circuit board space occupation.

This invention discloses an NPN-type adjustable low-temperature drift current reference circuit, comprising a startup circuit module and a current reference generation circuit module. The startup circuit module includes NMOS transistors M3, M4, M5, PMOS transistors M6 and M7, and resistor R3. The current reference generation circuit module includes PMOS transistors M1 and M2, NPN transistors Q1 and Q2, resistors R1 and R2. The NPN-type adjustable low-temperature drift current reference circuit provided by this invention reduces the temperature drift of the reference current, significantly improves the temperature coefficient, and enhances the accuracy of the current reference circuit. Furthermore, this invention only adds resistors to the circuit, making the circuit simple and easy to implement without requiring additional manufacturing processes, thus facilitating practical applications.

The present invention provides a semiconductor device that meets the requirements for power protection circuits in response to increased power supply voltage and faster power-up speeds. [Solution] The semiconductor device of this disclosure has a power terminal, a ground terminal, a power protection circuit, and a protected circuit. The power protection circuit includes a sequence circuit, a first control circuit, a second control circuit, a trigger voltage determination circuit, a discharge transistor, a first resistor circuit, and a trigger voltage conversion circuit. When the power supply voltage exceeds a first trigger voltage threshold, the power protection circuit operates the discharge transistor by flowing a first control current corresponding to the power supply voltage through the first resistor circuit to flow the power supply current to the source of the discharge transistor, and puts the sequence circuit into a standby state by flowing a second control current through the sequence circuit. When the power supply current becomes greater than a predetermined magnitude, the power protection circuit drives the trigger voltage conversion circuit using a gate control current to lower the power supply voltage to a second trigger voltage threshold that is smaller than the first trigger voltage threshold.

This invention belongs to the field of integrated circuit technology, specifically relating to an LDO circuit. This invention is a three-stage LDO structure, including a variable resistor module, a first-stage error amplifier, a buffer stage, an output power transistor, and a feedback resistor circuit. By replacing the resistor generating the zero point in the pseudo-ESR compensation loop with a variable resistor through the variable resistor module, this invention achieves precise tracking of the secondary point position by the zero point. The LDO circuit module of this invention can achieve a 1MHz loop bandwidth under a maximum output current of 400mA, accurately tracking the secondary point position change in the pseudo-ESR compensation technology, achieving a load step transient response time of less than 2µs, and an output undershoot voltage of less than 23mV caused by a load step change (load changes from 0-400mA, step time 1µs).

An integrated circuit has an input terminal to receive an input voltage, an output terminal coupled to an output voltage, a reference terminal, a power ground terminal, a power transistor for providing a current conduction path between the input terminal and the output terminal, a main control circuit for providing a control signal relative to the reference terminal to a control electrode of the power transistor, a variable resistance circuit coupled between the reference terminal and the power ground terminal for being switched between an ON state and an OFF state based on a driving voltage applied to a control terminal of the variable resistance circuit, and a driver circuit for adjusting the driving voltage based on the polarity of the input voltage or the polarity of the output voltage.

This invention discloses a single-particle radiation hardening CMOS pseudo-resistor circuit, comprising: an adjustable CMOS pseudo-resistor circuit for generating an adjustable CMOS pseudo-resistor; wherein the adjustable CMOS pseudo-resistor circuit has a radiation-sensitive node located between the drain of a first transistor and the drain of a second transistor, the first transistor generating a current injected into the radiation-sensitive node, and the second transistor generating a current drawn from the radiation-sensitive node; a first balancing current mirror circuit for generating a discharge current when a single particle irradiates the drain of the first transistor, discharging the discharge current injected into the radiation-sensitive node to ground, thereby hardening the radiation-sensitive node; and a second balancing current mirror circuit for generating a compensation current when a single particle irradiates the drain of the second transistor, injecting the compensation current into the radiation-sensitive node, thereby hardening the radiation-sensitive node.

This invention discloses a pseudo-resistor circuit, an RC filter circuit, a current mirror circuit, and a chip. The pseudo-resistor circuit includes a first MOSFET and a bias circuit. The bias circuit provides a bias voltage between the gate and source of the first MOSFET to enable the first MOSFET to operate in the subthreshold region, and adjusts the resistance value of the first MOSFET by adjusting this bias voltage. The pseudo-resistor circuit, RC filter circuit, current mirror circuit, and chip of this invention can achieve a high resistance value with a smaller area. This reduces the resistor area and allows for a smaller capacitor value to achieve the same RC time constant, thus reducing the capacitor area. Furthermore, the resistance value of this pseudo-resistor is less affected by process voltage-temperature (PVT), ensuring that the filtering effect of the RC filter does not change significantly with variations in PVT.

This invention discloses a reverse polarity protection circuit, an integrated circuit, and an electronic circuit including the integrated circuit. The integrated circuit includes an input terminal for receiving an input voltage, an output terminal for providing an output voltage, a reference terminal, a power ground terminal, a power transistor, a main control circuit, a variable resistor circuit, and a drive circuit. The power transistor has a current conduction path coupled between the input terminal and the output terminal and a control terminal. The main control circuit provides a control signal based on the potential of the reference terminal to the control terminal of the power transistor. The variable resistor circuit is coupled between the reference terminal and the power ground, switching between an on state and an off state based on a drive voltage applied to a control terminal of the variable resistor circuit. The drive circuit adjusts the drive voltage based on the voltage polarity of the input voltage or the output voltage. Using embodiments of this invention, the reliability of the protection circuit is ensured while maintaining low conduction losses.

A mass spectrometry device (10) includes an ion generation mechanism, an ion trap mechanism (140), a detector (150), and a voltage generation circuit (180). The ion trap mechanism traps ions in an internal space surrounded by a plurality of electrodes. The detector detects ions discharged from the ion trap mechanism. The plurality of electrodes include a first electrode (141) that generates an electric field for trapping ions and a second electrode (142, 144) that generates an electric field for discharging specific ions from the ion trap mechanism in a state where ions are trapped. The voltage generation circuit includes a voltage source (181, 182), switches (SW1, SW2), and resistance circuits (RC1, RC2). The voltage of the voltage source (182) is lower than the voltage of the voltage source (181). The switches (SW1, SW2) selectively supply the voltage from the voltage sources (181, 182) to the first electrode, respectively. The resistance circuits (RC1, RC2) are connected to control terminals of the switches (SW1, SW2), respectively. The resistance values of the respective resistance circuits are variable.

The application relates to a power-taking power supply circuit of an IGCT converter valve, which comprises an input support capacitor, a switching resistance circuit, a high-voltage DC / DC converter, a current loop control circuit and an IGCT driving unit, the input support capacitor, the switching resistance circuit, the high-voltage DC / DC converter, the current loop control circuit and the IGCT driving unit are connected in series in sequence, one end of the input support capacitor is adapted to be electrically connected to the positive electrode of the power-taking power supply and the other end is grounded, the switching resistance circuit comprises an external switching resistance and a controllable circuit, one end of the external switching resistance is connected to the positive electrode of the input support capacitor and the other end is grounded, the drain of a field effect transistor is connected to the positive electrode of the input support capacitor through an adjusting resistance, the source of the field effect transistor is grounded, the gate of the field effect transistor is adapted to receive a control pulse signal, the anode of a reverse diode is connected to the source of the field effect transistor and the cathode is connected to the drain of the field effect transistor, the field effect transistor of the controllable circuit is turned on and off, and the input side equivalent resistance is adjusted in real time.

This utility model relates to the field of power module electrical performance testing technology, specifically to a variable resistor adjustment device for power modules, including a front-end circuit; a driving resistor circuit connected between the front-end circuit and the driven power module, the driving resistor circuit including a potentiometer, the first pin of the potentiometer being connected to the first terminal of the front-end circuit, the third pin of the potentiometer being connected to the signal g terminal of the power module, and the second pin of the potentiometer sliding along the potentiometer; and a resistance control device connected to the front-end circuit and the potentiometer for adjusting the potentiometer. This utility model replaces the traditional relay-fixed resistor combination scheme with a combination of potentiometer and resistance control device, achieving continuous adjustment of Rg by precisely adjusting the potentiometer resistance value, significantly reducing the size and complexity of the testing device, and improving the flexibility and accuracy of dynamic testing.

Disclosed is a power supply circuit adapted to an electronic device. The power supply circuit includes a first interface terminal, a second interface terminal, a resistor circuit, a charge and discharge circuit and a plurality of switch circuits. The first interface terminal receives a first power voltage. The second interface terminal receives a second power voltage. The charge and discharge circuit detects a voltage generated between a first detection point and a second detection point in the resistor circuit. The switch circuits are respectively coupled between the first interface terminal and the resistor circuit and between the second interface terminal and the resistor circuit, and controlled by a plurality of control signals to be turned on or off, thereby changing a position of the first detection point based on whether a power source of the electronic device is from the first interface terminal or the second interface terminal.

This application provides a voltage-controlled resistor (VCR) adjustable termination resistor circuit and system based on mirror control, relating to the field of high-speed serial transmitter design technology. It includes: a working path, a mirror path, and a control loop; the mirror path and the working path operate in the same environment; the control loop applies control voltages to the VCR in the working path and the mirror VCR in the mirror path respectively to control their resistance values; the control loop compares the critical node voltage at the output of the mirror VCR with the reference voltage of a reference voltage source, and outputs a control voltage based on the real-time voltage deviation. The voltage-controlled resistor (VCR) adjustable termination resistor circuit and system provided in this application uses a mirror backup termination resistor to detect the impedance of the termination resistor in real time, and adjusts the termination resistor value in real time when the chip voltage and temperature change, to meet the termination resistor requirements of the high-speed serial interface.

Resistive shield for electronic circuits and manufacturing method. The invention relates to a protective shield for an electronic device comprising: a resistive circuit (C3) of metallic lines, said circuit being associated with at least one resistivity signature of the circuit which constitutes a reference value for certifying the integrity of the circuit; means for monitoring the resistivity of the circuit, connected to said circuit, said monitoring means being capable of measuring at least one resistivity value of the circuit and comparing this value to said resistivity signature to certify the integrity of the circuit, characterized in that the resistive circuit comprises at least one phase-change resistive cell whose resistivity contributes to establishing said resistivity signature of the circuit. Figure for the abstract: Fig. 3

The application discloses a continuous-time comparator and offset adjustment circuit and electronic equipment, and the circuit comprises: a first-stage amplifier configured to receive a differential input signal; a second-stage amplifier configured to receive an output signal of the first-stage amplifier; a shaping circuit configured to receive an output signal of the second-stage amplifier; an adjustable resistance circuit connected to a differential input end; and an offset adjustment circuit connected to an output end of the shaping circuit. The embodiment of the application overcomes the shortcomings of slow speed and large power consumption of the existing LVDS receiving circuit, and proposes a continuous-time comparator with wide input common-mode range and high speed and a low-power-consumption offset adjustment circuit.

A wireless power transfer (WPT) system for charging an electric vehicle is disclosed. The system includes a WPT coil, a positioning system, and control circuitry. The positioning system includes a positioning coil connected to a switch, wherein in a first switch state the switch is configured to connect the positioning coil to resistor circuitry, and in a second switch state the switch is configured to disconnect the positioning coil from the resistor circuitry. The control circuitry is configured to set the switch to the first switch state to connect the positioning coil to the resistor circuitry, activate the WPT coil to induce a voltage in the positioning coil, receive a measurement from the positioning coil, and determine a relative position between a vehicle assembly and a ground assembly of the WPT system based on the received measurement from the positioning coil.

The application provides a laser driving circuit, a frequency-modulated continuous wave laser radar and a laser driving method, wherein the laser driving circuit comprises a driving circuit, a sampling resistance circuit, a differential amplification circuit and a control circuit, the differential amplification circuit comprises a resistance matching network and an operational amplifier, the impedance ratio in the resistance matching network is negatively related to noise, the control circuit acquires the noise of the laser driving circuit and positively adjusts the impedance ratio of the matching resistance of the resistance matching network, and the resistance value in the sampling resistance circuit can be selected to be smaller, so that low noise and low power consumption are achieved, an RC filter circuit does not need to be added, the dynamic performance of the system is not affected, and the design cost is reduced.

The application relates to an enhanced gallium nitride high electron mobility transistor unit chip and a circuit system. The unit chip comprises an enhanced gallium nitride high electron mobility transistor device body, an adjustable resistance circuit for reducing voltage fluctuation by adjusting resistance, a device metal pad, a resistance metal pad and an on-chip interconnection metal; the adjustable resistance circuit is integrated in the enhanced gallium nitride high electron mobility transistor device body, one end of the adjustable resistance circuit is connected with a gate of the enhanced gallium nitride high electron mobility transistor device body, and the other end is connected with a source of the enhanced gallium nitride high electron mobility transistor device body through a switch or grounded. The circuit system comprises the above-mentioned enhanced gallium nitride high electron mobility transistor unit chip, a driving circuit and a switch, and can further comprise a signal reading and feedback circuit. The application can improve the working stability and safety reliability, and balance the power consumption and reliability.

The present invention provides an abnormality detection circuit and motor drive device capable of accurately detecting abnormalities such as wire breaks. [Solution] The abnormality detection circuit 18 of the motor drive device 10 includes a resistor circuit 46 that is Δ-connected or Y-connected, and an output circuit 56 that outputs at least one of the following signals: a first signal S1 which is a signal corresponding to the current flowing through a first electrical resistor 48U, a second signal S2 which is a signal corresponding to the current flowing through a second electrical resistor 48V, and a third signal S3 which is a signal corresponding to the current flowing through a third electrical resistor 48W.

The application discloses a circuit for improving the heavy load efficiency of a switching power supply, comprising three comparators comp, the non-inverting terminals of the comparators are connected with an error amplifier output signal Vc, the inverting terminal Vx of the first comparator is connected with the Vc value when Io=700mA, the inverting terminal Vy of the second comparator is connected with the Vc value when Io=770mA, and the inverting terminal Vz of the third comparator is connected with the Vc value when Io=820mA. The output terminals a, b and c of the three comparators are connected with the input terminals of a logic control circuit, and the four output terminals of the logic control circuit are connected with four switches of different reference generation circuits. The different reference generation circuits are connected in series through four resistors, and the resistors are used for voltage division to obtain different gate voltages of power tubes. The application discloses a power tube adaptive conduction resistance circuit applied to improving the heavy load efficiency of a switching power supply, and the application effectively improves the conversion efficiency of the switching power supply under heavy load.