151 results about "Cell resistance" patented technology

Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

Systems and methods employing at least one constant current source to facilitate programming of an organic memory cell and / or employing at least one constant voltage source to facilitate erasing of a memory device. The present invention is utilized in single memory cell devices and memory cell arrays. Employing a constant current source prevents current spikes during programming and allows accurate control of a memory cell's state during write cycles, independent of the cell's resistance. Employing a constant voltage source provides a stable load for memory cells during erase cycles and allows for accurate voltage control across the memory cell despite large dynamic changes in cell resistance during the process.

In a spray pyrolysis manufacturing method of an all-solid-state film lithium ion battery, a double-layer film structure is formed by depositing an anode material and a solid electrolyte together, and two layers of precursor solutions are sprayed simultaneously at a junction part of a anode solid electrolyte layer and a cathode layer by a double spray gun so as to form a buffer layer. The invention is characterized in that an interface layer between films is reduced; not only the battery resistance is reduced, but also the ionic conductivity of the anode material is increased; in the buffer layer between two deposition layers, the component contents of the two layers change gradually; the component content of the lower layer decreases gradually, and the component content of the upper layer increases gradually. Therefore, tight combination of the upper and the lower layers is formed; the compatibility of the upper and the lower layers is improved; the stress and crystal boundary are decreased; and the interfacial conductivity is increased; the conductivity of the whole all-solid-state film battery is greatly improved, and the stability and cycling performance of the battery are improved.