A current-driven symmetric magnetic multilayer-structure
microwave oscillator belongs to the field of
microwave technology. The invention is characterized in that the current-driven symmetric magnetic multilayer-structure
microwave oscillator is composed of two ferromagnetic films with the same thickness which is between 2 nanometers and 6 nanometers. The two ferromagnetic films are separated by a thin non-
magnetic layer which has a thickness between 1 nanometer and 3 nanometers (non-magnetic
metal layer) or between 0.5 nanometer and 1.5 nanometers (insulating layer). The upper part and lower part of nanometer magnetic multilayer column are equally provided with a
metal layer as an
electrode. When a constant and invariable
direct current vertically passes the magnetic multi-layer structure, the
spin polarization and
spin moment transmission are generated. Furthermore the
spin moment is exerted to each
magnetic layer. When the current exceeds a threshold value, the alternate direction turnover of
magnetization vectors of two
magnetic films is caused, and furthermore the periodic changing of magnetic multilayer
resistor is caused thereby generating stable microwave oscillation. The oscillation frequency and current have a
linear relationship between 1-100GHz. The
microwave power can also be adjusted by current between 1 microwatt and 1 milliwatt. The full-metallic structure accounts for 4%, and the magnetic channel structure accounts for 30%.