31 results about "Spin moment" patented technology

It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.

We describe a reference cell structure for determining data storing cell resistances in an SMT (spin moment transfer) MTJ (magnetic tunneling junction) MRAM array by comparing data cell currents with those of the reference cell. Since the reference cell also utilizes spin moment transfer (SMT) magnetic tunneling junction (MTJ) cells, there would ordinarily be the danger that the act of reading the reference cell could change its magnetization orientations and be a source of error for subsequent comparisons. Therefore the present invention describes a new circuit arrangement for the reference cell that directs read currents through two SMT MTJ cells in opposite directions so that the transfer of spin moments cannot affect the relative magnetization directions of the cells.

The invention relates to a single-layer ferromagnetic material with magnetic moment flipping driven by current and application thereof. The single-layer ferromagnetic material is a thin film with thickness of 1-100nm, has strong spin-orbit coupling action, generates spin moment after current is introduced, and flips self-magnetic moment of the single-layer ferromagnetic material by spin moment. The invention utilizes current to generate spin moment in monolayer ferromagnetism, and inverting the magnetic moment of the single-layer ferromagnetism by using the spin moment, The device can be applied to magnetic random access memory and spin logic device, and the device based on the technology of the invention can have unlimited thickness so as to have higher thermal stability, that is, nonvolatility, and simplify the structure and preparation process of the device in application, and has great cost advantage.

The disclosed device has a first and a second ring (13, 14), which are arranged facing one another, are relatively rotatable and have a common rotation centre axis (R1), and a rotation centre axis (R2) which is parallel to the other rotation centre axis (R1). The device is provided with: a plurality of planetary balls (15), which are arranged between the first and second rings (13, 14) so as to be radially centred around the rotation centre axis (R1); a transmission control unit (17), which changes the rotation ratio between the first and second rings (13, 14) by changing the respective contact points of the first and second rings (13, 14) and each planetary ball (15), by means of the inclined rotational operation of each planetary ball (15); and rotation suppression units (30), which are disposed between adjacent planetary balls (15), cancel out, between adjacent planetary balls (15), at least part of each of the spin moments which are generated in each planetary ball (15), and suppress rotation with the spin moment, which is in a different direction to the rotational direction during inclined rotation, and the rotational direction of the planetary balls (15) around the axes thereof.

This invention describes a circuit and method to limit the stress caused by gate voltages required to write a one or zero in magnetic memory elements using the Giant magneto-resistive effect, such as Phase Change RAM and Spin Moment Transfer MRAM, sometimes referred to as Spin Torque Transfer MRAM, which require high programming currents. The circuit and method selects one cell at a time for writing a one or a zero, different voltages to write a one or a zero, and a precharge circuit to limit the stress on non selected cells.

The invention discloses a weight type self-balancing eccentric shaft. A balance weight is fillet-welded on the opposite side, close to an eccentric center line, of a connecting guard in an eccentric shaft in the prior art, so that the center of mass of the connecting guard shifts toward the opposite side, relative to a rotary center line, of eccentric bearing guards and the eccentric inertia moment generated by the connecting guard is equal to the eccentric inertia moments generated by the eccentric bearing guards but the directions are opposite, thus achieving self-balancing of the eccentric inertia spin moment of the eccentric shaft. The eccentric inertia spin moment of the eccentric shaft in the prior art is self-balanced by the interior of the eccentric shaft instead of original external flywheels, thus eccentric balance weights on the external flywheels can be omitted. The weight type self-balancing eccentric shaft has high balance precision and a simplified structure, is easy to detect and control, reduces the manufacturing cost of equipment and saves the operating cost.

Provided is a continuously variable transmission provided with first and second rotating members (10, 20) which have common first rotation central axes (R1); planetary balls (50) which are rotatably supported by support shafts (51) having second rotation central axes (R2) that are other than the first rotation central axes (R1), which are held by first rotating members (10) and second rotating members (20) in such a way as to be positioned therebetween, and which permit torque to be transmitted therebetween; grooves (41a, 41b) etc. which tilt the planetary balls (50), thereby changing the rotation ratio between the first and second rotating members (10, 20); inclined surfaces (42a1) which, when moved in the axial direction, push the support shafts (51) in directions reverse to tilt directions of the support shafts (51), said tilt directions being compatible with spin moments generated in the planetary balls (50); and thrust force transmission sections such as movable shafts (62) whereby axial thrust forces applied by the planetary balls (50) on the basis of spin moments generated in the planetary balls (50) are transmitted to the inclined surfaces (42a1).

The invention relates to a triangular profiled polyester fiber HOY filament and a preparation method thereof. A spinning melt includes saturated fatty acid metal salt and polyester in the mass ratio of (0.0005.0.002):1; the pressure after filtering at a spinning moment is 85.125kg/cm<2>; a die swell ratio of the spinning melt is 1.20.1.32; the saturated fatty acid metal salt is the metal salt with the carbon number of 12.22, the melting point at 100-180 DEG C and dynamic viscosity less than or equal to 1Pa.s. According to the invention, the saturated fatty acid metal salt is added into the spinning melt, and equivalently, a lubricating agent is added, so that the pressure after filtering at the spinning moment is effectively reduced, the outlet expansion is effectively reduced and the product has an excellent shape-preserving effect; and meanwhile, the saturated fatty acid metal salt also can be used as a nucleating agent; the curing speed of the fiber can be increased; the shape-preserving effect of the fiber is further improved.

The invention discloses a plane type self-balancing eccentric shaft. An arc circle is cut and a cutting plane is reserved on the same eccentric side of a connecting guard and eccentric bearing guards in an eccentric shaft in the prior art so that the center of mass of the connecting guard shifts toward the opposite side, relative to a rotary center line, of the eccentric bearing guards and the eccentric inertia moment generated by the connecting guard is equal to the eccentric inertia moments generated by the eccentric bearing guards but the directions are opposite, thus achieving self-balancing of the eccentric inertia spin moment of the eccentric shaft. The eccentric inertia spin moment of the eccentric shaft in the prior art is self-balanced by the interior of the eccentric shaft instead of original external flywheels, thus eccentric balance weights on the external flywheels can be omitted. The plane type self-balancing eccentric shaft has high balance precision and a simplified structure, is easy to detect and control, reduces the manufacturing cost of equipment and saves the operating cost.

The invention discloses a magnetic memristor based on 3D stacked multi-tunnel junction, comprising n magnetic layers and (n-1) insulating layers, wherein the magnetic layers and the insulating layersare alternately arranged, wherein n is an integer greater than or equal to 2, and an insulating layer and upper and lower magnetic layers form a tunnel junction, the n magnetic layers and the (n-1) insulating layers constitute (n-1) tunnel junctions. The multi-valued memory based on the multi-layer magnetic thin film provided by the invention can meet the requirements of high density, multi-valuedmemory, small size, lightweight and low power consumption in the storage technology. The structure of the invention is a magnetic film structure in which a magnetic layer and an insulating layer arealternately superposed, and can be regarded as a plurality of magnetic tunnel junctions in series. The invention adopts the spin moment transfer effect flipping of a spin current, which is characterized in that the power consumption is lower, an external magnetic field is not required, and the magnitude can be controlled by a current.

The invention discloses an arranged hole type self-balancing eccentric shaft. Part of the mass of the same eccentric side of a connecting guard and eccentric bearing guards in an eccentric shaft in the prior art is deducted, namely that the volume of an arranged hole is milled so that the center of mass of the connecting guard shifts toward the opposite side, relative to a rotary center line, of the eccentric bearing guards and the eccentric inertia moment generated by the connecting guard is equal to the eccentric inertia moments generated by the eccentric bearing guards but the directions are opposite, thus achieving self-balancing of the eccentric inertia spin moment of the eccentric shaft. The eccentric inertia spin moment of the eccentric shaft in the prior art is self-balanced by the interior of the eccentric shaft instead of original external flywheels, thus eccentric balance weights on the external flywheels can be omitted. The arranged hole type self-balancing eccentric shaft has high balance precision and a simplified structure, is easy to detect and control, reduces the manufacturing cost of equipment and saves the operating cost.

The invention discloses a cylinder type self-balancing eccentric shaft. A center line of a connecting guard in the eccentric shaft is originally arranged together with a center line of eccentric bearing guards in the same direction (or coincides with a rotary center line) but is currently arranged in the opposite directions, and self-balancing of the eccentric inertia spin moment of the eccentric shaft is achieved by utilizing the opposite eccentric inertia moment balance principle. The eccentric inertia spin moment of the eccentric shaft in the prior art is self-balanced by the interior of the eccentric shaft instead of original external flywheels, thus eccentric balance weights on the external flywheels can be omitted. The cylinder type self-balancing eccentric shaft has high balance precision and a simplified structure, is easy to detect and control, reduces the manufacturing cost of equipment and saves the operating cost.

Magnetic memory elements such as Phase Change RAM and Spin Moment Transfer MRAM require high programming currents. These high programming currents require high gate to source/drain voltages for the cell transistors controlling these programming currents, which can degrade the reliability of these cell transistors. This invention describes a circuit and method to write information into individual memory cells while minimizing the gate voltage stress in the cell transistors of the memory cells in which no information is being written. The circuit of this invention has a separately controllable word line voltage supply for each row of the memory array and a separately controllable voltage supply for each bit line of the memory array. During the write operation the voltage is raised for the word line of only one row of the array. The bit line voltages are then adjusted so that a 1 is written into the desired cells in that row and a 0 is written into the desired cells in that row.

The invention discloses a groove type self-balancing eccentric shaft. Part of the mass of the same eccentric side of a connecting guard and eccentric bearing guards in an eccentric shaft in the prior art is deducted, namely that the volume of a groove is milled so that the center of mass of the connecting guard shifts toward the opposite side, relative to a rotary center line, of the eccentric bearing guards and the eccentric inertia moment generated by the connecting guard is equal to the eccentric inertia moments generated by the eccentric bearing guards but the directions are opposite, thus achieving self-balancing of the eccentric inertia spin moment of the eccentric shaft. The eccentric inertia spin moment of the eccentric shaft in the prior art is self-balanced by the interior of the eccentric shaft instead of original external flywheels, thus eccentric balance weights on the external flywheels can be omitted. The groove type self-balancing eccentric shaft has high balance precision and a simplified structure, is easy to detect and control, reduces the manufacturing cost of equipment and saves the operating cost.

The invention discloses a method for adjusting the coercivity of rare earth-transition alloy film containing Gd ions. The method for adjusting the coercivity of the rare earth-transition alloy film containing the Gd ions aims to solve the problem of existing rare earth-transition alloy film containing Gd ions. The method comprises the following specific steps that firstly, a Gd patch and an inlaidtarget are combined into a composite target, the composite target is placed on a target position of a vacuum sputtering chamber, a substrate is fixed to a substrate table of the vacuum sputtering chamber, and working gas is fed into the vacuum sputtering chamber; secondly, a buffering base layer is sputtered on the substrate; thirdly, perpendicular rare earth-transition alloy film containing Gd ions is sputtered and grown on the buffering base layer; fourthly, a protective top layer is sputtered on the rare earth-transition alloy film containing Gd ions. The preparation method is simple, goodin repeatability and low in cost. The coercivity of the alloy film can be changed by 200% or over within a certain thickness range, procession and inversion of magnetic moment of the alloy film are promoted, and a simple structure is provided for achievement of a reliable spin-moment device.

The invention discloses a spin moment nano oscillator, comprising a synthetic antiferromagnetic structure, a non-magnetic spacer layer and a magnetic fixing layer arranged in sequence from top to bottom; The magnetic fixing layer receives a non-spin-polarized current, converts and outputs the non-spin-polarized current to a spin-polarized current; A synthetic antiferromagnetic structure receives aspin-polarized current output from a magnetic stationary layer, generates a magnetic moment precession due to a spin transfer moment effect, and outputs an oscillation signal; The non-magnetic spacerlayer between the magnetic fixing layer and the synthetic antiferromagnetic structure for separating the magnetic coupling between the two magnetic layers. The terahertz signal generator of the present application can output a THz signal with a current of a suitable magnitude and without the need for an external magnetic field.