A magnetic memristor based on 3D stacked multi-tunnel junction

Abstract

The invention discloses a magnetic memristor based on 3D stacked multi-tunnel junction, comprising n magnetic layers and (n-1) insulating layers, wherein the magnetic layers and the insulating layersare alternately arranged, wherein n is an integer greater than or equal to 2, and an insulating layer and upper and lower magnetic layers form a tunnel junction, the n magnetic layers and the (n-1) insulating layers constitute (n-1) tunnel junctions. The multi-valued memory based on the multi-layer magnetic thin film provided by the invention can meet the requirements of high density, multi-valuedmemory, small size, lightweight and low power consumption in the storage technology. The structure of the invention is a magnetic film structure in which a magnetic layer and an insulating layer arealternately superposed, and can be regarded as a plurality of magnetic tunnel junctions in series. The invention adopts the spin moment transfer effect flipping of a spin current, which is characterized in that the power consumption is lower, an external magnetic field is not required, and the magnitude can be controlled by a current.

Description

technical field [0001] The invention belongs to the field of information storage, and more specifically relates to a magnetic memristor based on 3D stacked multi-tunnel junctions. Background technique [0002] In the 21st century, with the rapid development of the Internet and the Internet of Things, mobile storage devices on the market are becoming thinner and thinner. The body thickness of the thinnest mobile phone vivo x5 Max on the market is only 4.75 mm, and HP’s ultrabook specter has reached an astonishing thickness of 10.4 mm. Excluding the indispensable main control chip and large-sized battery, the more memory space is left. come less and less. In contrast, high-definition movies and games require larger body storage space; people's demand for long battery life means that the device must have lower power consumption. It is not difficult to see that the market has clearly pointed out the direction for future storage: smaller size, larger memory and lower power cons...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a magnetic memristor based on 3D stacked multi-tunnel junctions, thereby solving the problem that the prior art cannot simultaneously satisfy high-density, multi-valued storage, small-size , thin and light and low power consumption requirements of technical issues

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