A magnetic memristor based on 3D stacked multi-tunnel junction

A stacked, multi-tunnel technology, applied in the field of information storage, can solve the problems of high density, multi-value storage, small size, lightness and low power consumption of storage technology at the same time, and achieve low power consumption, small write current, The effect of resistance stabilization

Inactive Publication Date: 2018-12-21
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
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  • Claims
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Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a magnetic memristor based on 3D stacked multi-tunnel junctions, thereby solv...

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  • A magnetic memristor based on 3D stacked multi-tunnel junction
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  • A magnetic memristor based on 3D stacked multi-tunnel junction

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0024] The present invention provides a magnetic memristor based on a 3D stacked multi-tunnel junction, comprising n layers of magnetic layers and (n-1) layers of insulating layers, the magnetic layers and insulating layers are alternately arranged, wherein, n is greater than or equal to 2 Integer, one insulating layer and its upper and lower magnetic layers form a tunnel junction, and n magneti...

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Abstract

The invention discloses a magnetic memristor based on 3D stacked multi-tunnel junction, comprising n magnetic layers and (n-1) insulating layers, wherein the magnetic layers and the insulating layersare alternately arranged, wherein n is an integer greater than or equal to 2, and an insulating layer and upper and lower magnetic layers form a tunnel junction, the n magnetic layers and the (n-1) insulating layers constitute (n-1) tunnel junctions. The multi-valued memory based on the multi-layer magnetic thin film provided by the invention can meet the requirements of high density, multi-valuedmemory, small size, lightweight and low power consumption in the storage technology. The structure of the invention is a magnetic film structure in which a magnetic layer and an insulating layer arealternately superposed, and can be regarded as a plurality of magnetic tunnel junctions in series. The invention adopts the spin moment transfer effect flipping of a spin current, which is characterized in that the power consumption is lower, an external magnetic field is not required, and the magnitude can be controlled by a current.

Description

technical field [0001] The invention belongs to the field of information storage, and more specifically relates to a magnetic memristor based on 3D stacked multi-tunnel junctions. Background technique [0002] In the 21st century, with the rapid development of the Internet and the Internet of Things, mobile storage devices on the market are becoming thinner and thinner. The body thickness of the thinnest mobile phone vivo x5 Max on the market is only 4.75 mm, and HP’s ultrabook specter has reached an astonishing thickness of 10.4 mm. Excluding the indispensable main control chip and large-sized battery, the more memory space is left. come less and less. In contrast, high-definition movies and games require larger body storage space; people's demand for long battery life means that the device must have lower power consumption. It is not difficult to see that the market has clearly pointed out the direction for future storage: smaller size, larger memory and lower power cons...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02B82Y40/00
CPCB82Y40/00H10N50/80H10N50/10
Inventor 游龙洪正敏曾逸
Owner HUAZHONG UNIV OF SCI & TECH
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