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Method for adjusting coercivity of rare earth-transition alloy film containing Gd ions

A technology of alloy thin film and coercive force, which is applied in the field of magnetic spintronics and recording technology materials, can solve the problems of unsatisfactory use effect, and achieve the effect of simple structure, simple preparation method and good repeatability

Pending Publication Date: 2019-07-16
EAST CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current research work is based on the non-magnetic heavy metal / ferromagnetic thin film structure or non-magnetic heavy metal as the buffer bottom layer in the double-layer structure, on which the ferrimagnetic thin film is regrown (such as Z. Zhao et al., Appl. Phys. Lett. , 106(13), 132404(2015) and W.S.Ham et al., Appl.Phys.Lett.110, 242405(2017)), the use of this structure is not ideal

Method used

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  • Method for adjusting coercivity of rare earth-transition alloy film containing Gd ions
  • Method for adjusting coercivity of rare earth-transition alloy film containing Gd ions
  • Method for adjusting coercivity of rare earth-transition alloy film containing Gd ions

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Effect test

Embodiment 1

[0026] A method for regulating the coercive force of a rare earth-transition alloy thin film containing Gd ions, the specific steps are as follows:

[0027] Step 1, the high-purity Gd chip and the iron target are combined to form a composite target, and then the composite target is placed in the target position of the vacuum sputtering chamber, the substrate is fixed on the substrate stage of the vacuum sputtering chamber, and then placed in the vacuum sputtering chamber Introduce high-purity argon gas, and the vacuum degree of the vacuum sputtering chamber is 5.2×10 -6 Pa;

[0028] Step 2, sputtering the buffer bottom layer on the substrate, the buffer bottom layer adopts a tantalum layer, and the thickness of the buffer bottom layer is 10nm;

[0029] Step 3, sputtering and growing a vertical rare earth-transition alloy film containing Gd on the buffer bottom layer, where the rare earth-transition alloy film containing Gd is a Gd-(Fe, Co) material;

[0030] Step 4, sputteri...

Embodiment 2

[0032] A method for regulating the coercive force of a rare earth-transition alloy thin film containing Gd ions, the specific steps are as follows:

[0033] Step 1, the high-purity Gd patch and the iron-cobalt alloy target are combined to form a composite target, and then the composite target is placed in the target position of the vacuum sputtering chamber, and the substrate is fixed on the substrate stage of the vacuum sputtering chamber, and the substrate is fixed Cleaning and drying are carried out before the substrate table, and the working gas is introduced into the vacuum sputtering chamber, and the vacuum degree of the vacuum sputtering chamber is 3.6×10 -6 Below Pa, ensure the working environment;

[0034] Step 2, sputtering the buffer bottom layer on the substrate;

[0035] Step 3, sputtering and growing a vertical rare earth-transition alloy thin film containing Gd on the buffer bottom layer, the rare earth-transition alloy thin film GdFeCo material containing Gd, ...

Embodiment 3

[0038] A method for regulating the coercive force of a rare earth-transition alloy thin film containing Gd ions, the specific steps are as follows:

[0039] Step 1, the high-purity Gd patch and the mosaic target are combined to form a composite target, and then the composite target is placed in the target position of the vacuum sputtering chamber, and the substrate is fixed on the substrate stage of the vacuum sputtering chamber, and the substrate is fixed on the base Clean and dry before the film stage, and pass the working gas into the vacuum sputtering chamber;

[0040] Step 2, sputtering the buffer bottom layer on the substrate;

[0041] Step 3, sputtering and growing a vertical rare earth-transition alloy film containing Gd on the buffer bottom layer;

[0042] Step 4, sputtering a protective top layer on the Gd-containing rare earth-transition alloy thin film to obtain the finished product.

[0043] The finished product prepared in embodiment 3 is Si / Ta(5nm) / GdFeCo(20nm...

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Abstract

The invention discloses a method for adjusting the coercivity of rare earth-transition alloy film containing Gd ions. The method for adjusting the coercivity of the rare earth-transition alloy film containing the Gd ions aims to solve the problem of existing rare earth-transition alloy film containing Gd ions. The method comprises the following specific steps that firstly, a Gd patch and an inlaidtarget are combined into a composite target, the composite target is placed on a target position of a vacuum sputtering chamber, a substrate is fixed to a substrate table of the vacuum sputtering chamber, and working gas is fed into the vacuum sputtering chamber; secondly, a buffering base layer is sputtered on the substrate; thirdly, perpendicular rare earth-transition alloy film containing Gd ions is sputtered and grown on the buffering base layer; fourthly, a protective top layer is sputtered on the rare earth-transition alloy film containing Gd ions. The preparation method is simple, goodin repeatability and low in cost. The coercivity of the alloy film can be changed by 200% or over within a certain thickness range, procession and inversion of magnetic moment of the alloy film are promoted, and a simple structure is provided for achievement of a reliable spin-moment device.

Description

technical field [0001] The invention relates to the field of magnetic spin electronics and recording technology materials, in particular to a method for adjusting the coercive force of a rare earth-transition alloy thin film containing Gd ions. Background technique [0002] With the rapid development of magnetic spintronics, ferrimagnetic rare earth-transition alloy thin film materials have new applications in high-density, low-energy vertical magnetic random access memory devices and current-driven domain wall motion. Compared with ferrimagnetic (Tb, Dy)-transition (Fe, Co) alloy films containing Tb (terbium) or Dy (dysprosium) ions, the corresponding rare earth-transition alloy films containing S-state Gd (gadolinium) ions are vertical Anisotropy can usually be more than an order of magnitude smaller. At the same time, the amorphous ferrimagnetic Gd-containing rare earth-transition (Fe, Co) alloy thin film material has negligibly small magnetocrystalline anisotropy and hi...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/18C23C14/16H01F41/18
CPCC23C14/34C23C14/18C23C14/16H01F41/183H01F41/18
Inventor 王可马杰王亚宏张明智刘剑马善农
Owner EAST CHINA UNIV OF TECH
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