Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spinning moment transferring written magnetic random access memory and its manufacture method

一种铁磁性、纳米磁性的技术，应用在磁性随机存取存储领域

Active Publication Date: 2008-06-04
MACRONIX INT CO LTD
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Write disturb issues in MRAM arrays also persist

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spinning moment transferring written magnetic random access memory and its manufacture method
  • Spinning moment transferring written magnetic random access memory and its manufacture method
  • Spinning moment transferring written magnetic random access memory and its manufacture method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] FIG. 1 shows a cross-section of the basic structure of an embodiment of the invention. During a write operation, a current pulse is passed from a hard magnet through the MRAM element structure, the ferromagnetic free structure, and the second hard magnet. current densities in the range of about 10 5 A / cm 2 to about 10 7 A / cm 2 , and the pulse duration ranges from about 0.1ns to 100ns.

[0026] Unlike the prior art where each layer is flat and has the same width as the other layers, Figure 1 shows that the two hard magnets are much larger relative to the ferromagnetic free structure. This enablement utilizes low current densities for device programming. The current density required to change the magnetization direction follows the equation:

[0027] J=J c0 [1-(KT / E)ln(τ 0 / τ p )], where E=M s VH k / 2

[0028] J c0 , K (Boltzmann's constant) and τ 0 is a constant, τ p (pulse duration), T (temperature), M s (saturation magnetization), V (element volume), an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
current densityaaaaaaaaaa
timeaaaaaaaaaa
current densityaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a magnetic random access memory written by spin torque transfer and a method of manufacturing the same. The nanomagnetic element includes a first hard magnet with a first magnetization direction and a central axis. The element also includes a second hard magnet separated from the first hard magnet by a dielectric liner. The second hard magnet has a second magnetization direction opposite to the first magnetization direction of the first hard magnet and a central axis such that when the first and second hard magnets are aligned, a seal is formed through the first and second hard magnets. Magnetic flux loop. The element additionally includes a ferromagnetic free layer having a central axis. The spin torque transfer current is transmitted along the central axes of the first and second hard magnets and the ferromagnetic free layer, and affects the magnetization direction of the ferromagnetic free layer.

Description

technical field [0001] The present invention relates generally to magnetic random access memory (MRAM), and more particularly to magnetic random access memory programmed by spin torque transfer [0002] A novel structure of the device, and a method of making the same. Background technique [0003] Existing NVMRAMs operate by using cross-point magnetic field switching. Fields are generated by current passing through bit lines arranged above and below the device. A ferromagnetic free layer used as a writable plate in the device has a coercivity field smaller than the magnetic field generated by the bit line. As a result, the magnetization direction of the ferromagnetic free layer is altered to align with the magnetic field direction. However, this method of operation limits the ability to scale down MRAM elements due to the high current required. When multiple elements are configured into an MRAM array, operation additionally has write disturb problems since the magnetic f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H01F10/32G11C11/16G11C11/15H10N50/10
CPCG11C11/16
Inventor 何家骅
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com