Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Current-driven symmetric magnetic multilayer-structure microwave oscillator

A microwave oscillator and multi-layer structure technology, applied in solid-state lasers and other directions, can solve the problems of unguaranteed device performance consistency and difficult control of included angles.

Inactive Publication Date: 2009-09-09
TSINGHUA UNIV
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the angle between the magnetization of the fixed layer and the free layer is difficult to control, and the consistency of device performance cannot be guaranteed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current-driven symmetric magnetic multilayer-structure microwave oscillator
  • Current-driven symmetric magnetic multilayer-structure microwave oscillator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] figure 1 Shown is a schematic diagram of the structure of a current-driven symmetrical magnetic multilayer structure microwave oscillator. The structure is that the bottom electrode layer 2 is deposited on the silicon oxide substrate 1 first. Magnetron sputtering is then used to grow sequentially: a seed layer 3 , a first ferromagnetic layer 4 , an isolation layer 5 , a second ferromagnetic layer 6 , and a protective layer 7 . During the growth process, the induced magnetic fields applied to the first ferromagnetic layer 4 and the second ferromagnetic layer 6 are parallel to each other, and the two layers have the same thickness. The bottom electrode pattern is made by photolithography and etching technology, and then the multi-layer film structure is processed into a columnar structure with a lateral size of about 100 nanometers by electron beam exposure and ion beam etching, and the photoresist is retained. An insulating layer 8 is grown around the nanocolumns by me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A current-driven symmetric magnetic multilayer-structure microwave oscillator belongs to the field of microwave technology. The invention is characterized in that the current-driven symmetric magnetic multilayer-structure microwave oscillator is composed of two ferromagnetic films with the same thickness which is between 2 nanometers and 6 nanometers. The two ferromagnetic films are separated by a thin non-magnetic layer which has a thickness between 1 nanometer and 3 nanometers (non-magnetic metal layer) or between 0.5 nanometer and 1.5 nanometers (insulating layer). The upper part and lower part of nanometer magnetic multilayer column are equally provided with a metal layer as an electrode. When a constant and invariable direct current vertically passes the magnetic multi-layer structure, the spin polarization and spin moment transmission are generated. Furthermore the spin moment is exerted to each magnetic layer. When the current exceeds a threshold value, the alternate direction turnover of magnetization vectors of two magnetic films is caused, and furthermore the periodic changing of magnetic multilayer resistor is caused thereby generating stable microwave oscillation. The oscillation frequency and current have a linear relationship between 1-100GHz. The microwave power can also be adjusted by current between 1 microwatt and 1 milliwatt. The full-metallic structure accounts for 4%, and the magnetic channel structure accounts for 30%.

Description

technical field [0001] The invention belongs to the field of novel micron and nanometer spin electronic devices, in particular to a microwave oscillator with a symmetrical nanometer magnetic multilayer structure based on the principle of spin moment transmission. Background technique [0002] When a spin-polarized DC current passes vertically through an asymmetric nanomagnetic sandwich (the diameter of the pillar is about 100 nanometers, the thick fixed layer and the thin free layer are separated by an ultra-thin central non-magnetic interlayer spacer layer When the spin valve structure is opened, a spin transfer torque (spintransfer torque) will be generated and cause the change of the magnetization direction and magnitude of the free layer. It produces two important effects: current-sensing magnetic switching and spin transfer torque oscillators (STO). The former provides a new magnetic switch structure, which is expected to develop into a new generation of magnetic rando...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
Inventor 陈培毅董浩邓宁任敏
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com