The invention relates to the technical field of packaging, in particular to a double-end power supply and double-face heat dissipation packaged parallel half-bridge
power module, which is characterized in that a SiC
MOSFET chip and a
diode chip are arranged between an upper
DBC board and a lower
DBC board, the bottom ends of the SiC
MOSFET chip and the
diode chip are connected with the lower
DBC board through solder
layers, and the lower DBC board is connected with the lower DBC board through solder
layers. The top end of the SiC
MOSFET chip and the top end of the
diode chip are respectively connected with a conducting strip through a solder layer, and the conducting strip is connected with the upper DBC board through the solder layer. According to the invention, the two DBC boards and the buffer conducting strip realize
electrical connection of all parts in the module, so that the whole packaging structure of the module is simplified; two-sided heat dissipation of the SiC MOSFET and the diode chip is realized through the
copper-clad
layers arranged on the surfaces of the two DBC boards, the problem of
heat flow concentration of the SiC chip under the high-frequency working condition is effectively solved, and the problem of'heat-
electric stress'
coupling of the module under the high-frequency working condition is solved through
system coupling current balance and two-sided heat dissipation capability, so that the module has multi-unit self-current-sharing, and the service life of the module is prolonged. The high-frequency switch stress is inhibited and balanced; and the
power density is improved.