Extremely-simple floating ground charge-controlled memristor circuit simulation model

Abstract

The invention discloses an extremely-simple floating ground charge-controlled memristor circuit simulation model. The model comprises a port a, a port b, a voltage-controlled resistor UR, a resistor R, a current-controlled voltage source IU and a voltage integrator A; the voltage-controlled resistor UR comprises a voltage control end uc and a controlled resistor Ru; the resistance value of the controlled resistor Ru in the voltage-controlled resistor UR is controlled by the voltage value of the voltage control end uc; the current-controlled voltage source IU comprises a current control end i and a voltage source output end ui; the voltage value of the voltage source output end ui in the current-controlled voltage source IU is controlled by the current value of the current control end i; and the voltage integrator A comprises a voltage input end ui and a voltage output end uc. According to the floating ground charge-controlled memristor circuit simulation model provided by the invention, electrical characteristics of the ports a and b are equivalent to the characteristics of the ports A and B of a memristor M; only four elements existing in simulation software need to be used; and besides, the floating ground charge-controlled memristor circuit simulation model is a two-port model, thus the complexity and the number of components of the existing charge-controlled memristor circuit simulation model are further reduced, and the model has the advantages that the grounding of one end is not required, the change range of the memristance is flexible, and the working voltage rangeis wide.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a minimalist circuit simulation model of a floating charge-controlled memristor. Background technique [0002] Memristor (memristor) is a basic circuit element that describes the relationship between magnetic flux and charge. It is recognized as the fourth basic circuit element after resistors, capacitors, and inductors. It is a nonlinear resistor with memory function. In 2008, the Hewlett-Packard (HP) laboratory successfully realized the physical realization of memristor for the first time, setting off an upsurge of memristor research worldwide. Memristors have been proven to have broad application prospects in fields such as computer science, neural networks, bioengineering, communication engineering, and nonlinear circuits. Because HP memristors are limited by nanotechnology and strict experimental conditions, they cannot go out of t...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an extremely simple simulation model of a floating load-controlled memristor circuit, which solves the problem that the existing load-controlled memristor circuit simulation model requires one end to be grounded, is not a two-port model, and the voltage of the two ports cannot exceed The power supply voltage of active devices in the model and the complex structure of the required components

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