Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for single-port memory to realize the multi-port storage function

A memory and multi-port technology, applied in the field of devices and methods for realizing multi-port storage functions of single-port memory, capable of solving problems such as high cost and large memory area

Active Publication Date: 2008-08-06
GIGADEVICE SEMICON (BEIJING) INC
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in the current memory market, synchronous dual-port static memory generally uses 8 transistor memory units, which results in a large memory area and high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for single-port memory to realize the multi-port storage function
  • Device and method for single-port memory to realize the multi-port storage function
  • Device and method for single-port memory to realize the multi-port storage function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] The above and other technical features and advantages of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0057] The present invention utilizes general-purpose memory to arrange peripheral logic processing circuit, finishes the function of multi-port memory, please refer to shown in 2, it is the flow chart of the present invention realizes multi-port memory function method with single-port memory, and the steps that it comprises are:

[0058] Step a: arbitrate the control signals of multiple external input ports, and assign the sequence of input signals to them;

[0059] Step b: converting a plurality of parallel input external port signals into serial input, and successively transmitting to the interface circuit of the general memory;

[0060] Step c: if the write signal is valid, perform a normal write operation in the memory core;

[0061] Step d: if the read signal is valid, perform a conventional read op...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device and a method used by a single port storage for realizing a multi-port storage function. The device comprises a general storage and also comprises at least two external access ports, a parallel serial interface circuit and an internal storage unit access port, wherein each port at least comprises a data terminal, an address terminal, a chip selection terminal and a control terminal to realize the input and output of the data; the parallel serial interface circuit is connected with an external access port to complete the parallel serial conversion of the external data and arbitrate the control signals of the external ports; the general storage is connected with the parallel serial interface circuit together by the internal storage unit access port; according to the processing of the parallel serial interface circuit, the data is written into the general storage or the data is read from the general storage, thereby realizing the multiport storage via the single port storage, saving the storage area, improving the storage performance and reducing the cost.

Description

technical field [0001] The present invention relates to a storage method and equipment, in particular to a method and device for realizing multi-port storage function by utilizing a single port. Background technique [0002] Memory is the most important medium in integrated circuits. It not only shoulders the responsibility of instruction buffering, but also has the functions of storage, management, and even acceleration. With the advent of systems-on-chip and the integration of multiple functions on a single chip, memory and logic functions of increasing capacity are now integrated on the same chip. The development trend of integrated circuits requires chips to be more and more integrated, the area is shrinking, and the capacity is increasing. System-on-Chip (SoC) design requirements drive the development of memory IP. At present, static memory IP has occupied 60% of the SoC chip area, and it is still growing. Saving memory area and improving its performance has become a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C7/10G11C7/22G11C8/04
Inventor 朱一明
Owner GIGADEVICE SEMICON (BEIJING) INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com