29 results about "Distributed amplifier" patented technology

The invention discloses an ultra-wideband low-noise amplifier based on a double-coupling structure, relates to the field of electronic devices, and is used for solving the problems of large occupied area and large noise coefficient of a distributed amplifier in the prior art. Comprising a broadband input matching network acting on a first-stage circuit, a transconductance enhancement coupling structure and an active bias structure; the parallel RC negative feedback structure and the series-parallel coupling inductance peaking structure act on the second-stage circuit; the transconductance enhancement coupling structure at least comprises a first transistor, a first microstrip line connected with a source electrode of the first transistor and a second microstrip line connected with a drain electrode of the first transistor, and the first microstrip line and the second microstrip line are mutually coupled. Part of drain electrode current signals are coupled to the source electrode to be secondarily amplified, the high-frequency gain of the first-stage circuit is effectively improved, post-stage noise can be restrained, meanwhile, minimum noise matching under high frequency is carried out through the source electrode degeneration inductor and the broadband input matching network, and the noise performance is excellent; and the area can be saved.

The invention belongs to the field of integrated circuits, and relates to a distributed amplifier, in particular to a distributed amplifier based on a GaN process, which comprises N stages of traveling wave tube networks and a grid power supply bias network, the N stages of traveling wave tube networks comprise cascaded N traveling wave tube networks, and the Nth stage of traveling wave tube network outputs radio frequency signals; and the grid power supply bias network is used for providing bias voltage for the N-stage traveling wave tube network and is connected with the Nth-stage traveling wave tube network. Compared with a traditional distributed amplifier, according to the grid power supply bias network, a traditional grid absorption resistor is not connected with grid bias power supply voltage, the grid absorption resistor is divided into two resistors, and a filter capacitor is connected to the ground at an intermediate node of the two resistors; the tail end of the resistor is connected with grid bias power supply voltage, so that the bandwidth is expanded, and the stability of the circuit is improved; in addition, an input matching network is added to the input end of the amplifier, and input standing waves are optimized.

The invention relates to the field of radio frequency monolithic microwave integrated circuits, and discloses a distributed amplifier based on a negative feedback active terminal, and the circuit comprises grid transmission lines which are connected in sequence; the drain electrode transmission lines are connected in sequence, the output of the previous drain electrode transmission line is connected with the input of the next drain electrode transmission line, the output end of the last drain electrode transmission line is connected with the radio frequency signal output end through a second blocking capacitor, and the input end of the first drain electrode transmission line is grounded through a resistor; an amplification network N from the input end of the Nth drain transmission line to the input end of the Nth gate transmission line, where N is an integer greater than or equal to 2; and a negative feedback active terminal from the output end of the last drain transmission line to the output end of the last gate transmission line. Through the negative feedback active terminal, the thermal noise of the resistor at the low frequency is effectively reduced, so that the low-frequency noise of the distributed amplifier is greatly reduced, and the problem that the low-frequency noise of the distributed amplifier is large is solved.

The present invention relates to the field of wireless communication technologies, and discloses a distributed amplifier circuit adopting a current reuse structure and a unilateralization technique, including a gate transmission line with a load having an impedance of Z o , a drain transmission line with a load having an impedance of Z o , and n gain units adopting a current reuse structure combined with a unilateralization technique. A first transistor M 1i is connected between the gate transmission line and the i-th gain unit. Before and after the connection point where the gate of each first transistor M 1i is connected to the gate transmission line, first sub-distributed inductors of L G / 2 are connected in series respectively. The drain of the first transistor M 1i is coupled with a first peaking inductor L D1 and a first distributed inductor downstream of the connection point where the gate transmission line is connected to the gate of the first transistor of this gain unit; the drain transmission line is connected to the i-th gain unit through the drain of a second transistor M 2i in series with a second peaking inductor L D2 . The present invention improves the gain of the distributed amplifier.

The invention relates to the technical field of optical fiber communication and analog integrated circuits, and provides an optical modulator driver circuit and an optical transmitter, and the optical modulator driver circuit comprises an input impedance matching circuit which is used for isolating a DC signal and realizing input impedance matching of a preset resistance value; the variable gain amplification circuit is used for carrying out linear amplification on the differential output signal input into the impedance matching circuit and adjusting the gain under the gain control voltage; the distributed amplifier output circuit is used for further amplifying the differential output signal of the variable gain amplification circuit and improving the loading capacity so as to drive an optical modulator; and the bias and control circuit is used for providing bias voltage for the input impedance matching circuit and the distributed amplifier output circuit and providing gain control voltage for the variable gain amplification circuit, and the gain size is adjusted by changing the size of the gain control voltage. And the distributed amplification output circuit is used as the last-stage output circuit, so that the bandwidth upper limit can be improved.

Global digital predistortion techniques for distributed amplifier antenna array. An RF distribution network splits a low-power RF signal into multiple RF signals. A set of amplifiers resides within an antenna array column and each amplifier produces a respective amplified signal with a substantially equal power level. A first amplifier is connected to and positioned substantially adjacent to a nominal subarray of one or more radiating elements. A second amplifier is connected to and positioned substantially adjacent to a tapering subarray having more radiating elements than the nominal subarray. First and second observation couplers and an observation signal aggregator generate an aggregated observation signal. A DPD module updates a DPD parameter based on the aggregated observation signal.

This baseband amplifier comprises: a distributed amplifier (10); an RF amplifier (11); a demultiplexer (12) that outputs, to a first output terminal, a signal, from among input signals, that includes at least a signal component that is at least a high-frequency-side cutoff frequency of the distributed amplifier (10), and that outputs, from a second output terminal to the RF amplifier (11), a signal, from among input signals, that includes at least a signal component that is at least a low-frequency-side cutoff frequency of the RF amplifier (11); a group delay adjuster (14) that is inserted between the first output terminal of the demultiplexer (12) and the input terminal of the distributed amplifier (10); and a multiplexer (13) that multiplexes the output of the distributed amplifier (10) and the output of the RF amplifier (11).

The invention belongs to the field of radio frequency integrated circuits, and particularly provides a high-linearity distributed amplifier structure based on multi-grid voltage bias, which is used for solving the distortion problem of a CMOS (complementary metal oxide semiconductor) distributed amplifier. By providing incompletely consistent grid bias voltage for each gain unit of the distributed amplifier, the offset effect of a third-order nonlinear term is realized within a certain input voltage range, so that the third-order distortion problem of the distributed amplifier is improved, and finally the linearity optimization effect of the distributed amplifier is realized.

The application relates to the technical field of wireless communication, and provides a hybrid distributed power amplifier, which comprises a first amplifier module and a second amplifier module, the first amplifier module comprises at least two first stacked units, a first artificial transmission line and a second artificial transmission line, the output ends of the two first stacked units are electrically connected through the second artificial transmission line, the output end of the second first stacked unit serves as the output end of the first amplifier module, the sizes of the two first stacked units are sequentially decreased to form a non-uniform distribution arrangement, the second amplifier module comprises at least two second stacked units, a third artificial transmission line and a fourth artificial transmission line, the input end of the second stacked unit is connected with the input end of the first stacked unit, the second stacked unit is used for improving power synthesis and reducing loss, and the sizes of the two second stacked units are the same to form a uniform distribution arrangement. The application can improve the gain and efficiency of the distributed amplifier.

Multi-band electronic beam tilt for distributed amplifier antenna array. A first set of phase adjustment circuits within a low-power first-band RF transmit distribution network applies a first-band electronic beam tilt to a first-band RF transmit signal. A second set of phase adjustment circuits within a low-power second-band RF transmit distribution network applies a second-band electronic beam tilt to a second-band RF transmit signal. A first set of phase-adjusted first-band RF transmit signals is received at a set of RF front end modules that are distributed along an antenna array column. A second set of phase-adjusted second-band RF transmit signals is received at the set of RF front end modules. A set of subarrays of at least one radiating element is distributed along the antenna array column. Each subarray is connected to and positioned substantially adjacent to a corresponding RF front end module of the set of RF front end modules.

The utility model relates to a multifunctional microwave radio frequency amplifier which comprises a distributed amplifier, a drain reconfigurable module and a grid reconfigurable module, one end of the distributed amplifier is connected with an input signal, and the other end of the distributed amplifier outputs a signal. One end of the drain reconfigurable module is connected with the distributed amplifier, and the other end of the drain reconfigurable module is connected with a power supply Vdd to supply power to the distributed amplifier; one end of the grid reconfigurable module is connected with the distributed amplifier, and the other end of the grid reconfigurable module is connected with bias voltage Vg to provide grid bias for the distributed amplifier. Different output performances of the microwave radio frequency amplifier are realized through different reconstruction modes of the grid electrode and the drain electrode, corresponding configuration modes can be selected according to circuit design requirements, and the capability of outputting two performances of the same chip is realized.

An embodiment is a distributed amplifier including amplifier blocks, each of the amplifier blocks including a first transmission line to receive input of a signal to an input end, a second transmission line to output a signal from an output end, a first termination resistor having a first end connected to a terminal end of the first transmission line, a second termination resistor having a first end connected to an input end of the second transmission line, and unit cells arranged along the first and second transmission lines, each of the unit cells having an input terminal connected to the first transmission line and an output terminal connected to the second transmission line, the amplifier blocks are connected in cascade such that a terminal end of the second transmission line of one of the amplifier blocks is connected to the first transmission line of a subsequent amplifier block.

A distributed amplifier system comprising an impedance matching network configured to match an input impedance to an output impedance of the signal source, and a DC block configured to block DC components in the input signal. A variable gain amplifier adjusts the gain applied to the input signal based on a gain control signal to generate a gain adjusted signal. An emitter follower circuit receives and processes the gain adjusted signal to introduce gain peaking to create a modified signal. A distributed amplifier receives and amplifies the modified signal from the emitter follower circuit, to create an amplified signal. The distributed amplifier includes a termination network and one or more impedance matching elements configured for gain shaping the amplified signal. The gain peaking introduced by the emitter follower circuit is controlled by a variable current source. The distributed amplifier may be an open collector distributed amplifier.

An integrated distributed amplifier circuit can include an input transmission line structure comprising first unit cells including a first reactive circuit element and a first active circuit element, an output transmission line structure comprising second unit cells including a second reactive circuit element and a second active circuit element, and a termination circuit coupled to an end of the input transmission line structure. The termination circuit can include a current mirror circuit to establish a specified bias current for biasing respective first active circuit elements of the input transmission line structure. Such an approach can provide one or more of a broadband termination impedance and stable biasing conditions across different frequencies and power output levels.

A distributed amplifier according to the present invention comprises: a plurality of transistors (11)-(14) at which respective source nodes are grounded; a gate line (2) that electrically connects an input terminal (100) and the gate node of the last transistor (14) located on an output terminal (200) side, and that has a plurality of gate connection points (21)-(24) to which the gate nodes of the plurality of transistors (11)-(14) are electrically connected, and a plurality of inter-gate lines (201)-(204) respectively connected between the gate connection points that are adjacent to each other; a drain line (3) that electrically connects the output terminal (200) and the drain node of the first transistor (11) located on the input terminal (100) side, and that has a plurality of drain connection points (31)-(34) to which respective drain nodes of the plurality of transistors (11)-(14) are electrically connected, and a plurality of inter-drain lines (301)-(304) respectively connected between the drain connection points that are adjacent to each other and constitute a series circuit between capacitors (30b1)-{30b4) and drain-side transmission lines (30a1)-(30a4); and a plurality of drain voltage supply circuits (61-(64) that are respectively connected between a drain voltage supply node and corresponding drain connection points (31)-(34) of the drain line (3).

Global digital predistortion techniques for distributed amplifier antenna array. An RF distribution network splits a low-power RF signal into multiple RF signals. A set of amplifiers resides within an antenna array column and each amplifier produces a respective amplified signal with a substantially equal power level. A first amplifier is connected to and positioned substantially adjacent to a nominal subarray of one or more radiating elements. A second amplifier is connected to and positioned substantially adjacent to a tapering subarray having more radiating elements than the nominal subarray. First and second observation couplers and an observation signal aggregator generate an aggregated observation signal. A DPD module updates a DPD parameter based on the aggregated observation signal.

The invention discloses a multi-chip micro-assembled broadband distributed amplifier which comprises a carrier flange, a plurality of amplifiers connected with one another through metal leads are arranged on the carrier flange, the input ends of the amplifiers are connected with laminated ceramic plate networks, and the laminated ceramic plate networks are connected with one another through metal leads. The laminated ceramic plate network comprises a ceramic substrate, the upper surface of the ceramic substrate extends inwards to form a first metal layer with a certain distance away from the edge, a dielectric layer and an upper metal layer are sequentially arranged above the middle of the first metal layer, the dielectric layer is made of a high-dielectric-constant material, thin-film resistors are arranged at the corners of the first metal layer, and the upper metal layer is made of a high-dielectric-constant material. One end of the thin-film resistor is connected with the first metal layer, and the other end is connected with the lead pad. According to the distributed amplifier, the area of a high-cost semiconductor chip can be reduced, the cost is greatly reduced, debugging is more convenient, and the working bandwidth of the distributed amplifier can be further improved by adding the laminated ceramic plate network.

An example amplifier includes a first transconductance circuit, which includes a first output coupled to a first current source, a first input, a first network, and a cascode circuit; and a second transconductance circuit, which includes a second output coupled to a second input and a second current source; wherein the first current source is coupled to a supply voltage and the second current source is coupled to an electrical ground; and wherein the first output is coupled to the second output.

The utility model discloses an ultra wide band low noise amplifier based on a GaAs technology, which comprises an input port, an output port, N stages of power amplification units, a first active bias circuit and a second active bias circuit, wherein the N stages of power amplification units are positioned between the input port and the output port and are sequentially cascaded; the first active bias circuit is connected in parallel between the input port and the grounding end, the input end of the second active bias circuit is grounded, and the output end of the second active bias circuit is connected with the output end of the grid electrode of each stage of power amplification unit. An active bias circuit is embedded into the amplifier for integrated design, the chip amplitude consistency is improved, the Miller effect of a first-stage transistor is reduced by using a cascode structure circuit, so that the frequency bandwidth range is expanded, the gain value is higher than that of a distributed amplifier circuit of a cascode structure under the condition that the stages of gain units are the same, and the gain value is higher than that of the distributed amplifier circuit of the cascode structure. And the reverse isolation of the circuit is improved, and the loss of an output transmission line is reduced.

The invention relates to the technical field of wireless communication, and provides a hybrid distributed power amplifier, the hybrid distributed power amplifier comprises a first amplifier module and a second amplifier module, the first amplifier module comprises at least two first stacking units, a first artificial transmission line and a second artificial transmission line; the output ends of the two first stacking units are electrically connected through a second manual transmission line, and the output end of the second first stacking unit serves as the output end of the first amplifier module; the sizes of the two first stacking units are gradually reduced in sequence so as to form non-uniform distribution arrangement; the second amplifier module comprises at least two second stacking units, a third manual transmission line and a fourth manual transmission line; the input end of the second stacking unit is connected with the input end of the first stacking unit; the second stacking unit is used for improving power synthesis and reducing loss; and the two second stacking units are the same in size so as to form uniform distribution arrangement. The gain and efficiency of the distributed amplifier can be improved.

This invention provides a CMOS ultra-wideband high-gain high-power amplifier, relating to the field of power amplifier technology. It includes a multi-drive improved Class D amplifier and a multi-stage compact coupled peaking distributed amplifier. The multi-stage compact coupled peaking distributed amplifiers are connected sequentially. The input RF signal is connected to the first-stage compact coupled peaking distributed amplifier via an input line. The output of the Nth-stage compact coupled peaking distributed amplifier is connected to the input of the multi-drive improved Class D amplifier via an output line. The output of the multi-drive improved Class D amplifier outputs the RF signal. The advantage of this invention is that it solves the problems of large area, low gain, and low output power in traditional distributed amplifiers.

Amplifiers with bias control for DC coupled single-ended distributed amplifiers of multi-stage amplifiers are described herein. An example amplifier with input bias control includes a distributed amplifier cell having an input coupled to a first distributed transmission line and an output coupled to a second distributed transmission line, an input coupling network coupled between the first distributed transmission line and the input of the distributed amplifier cell, and a bias interface circuit coupled between the input coupling network and the input of the distributed amplifier cell. The amplifier can also include a bias control circuit configured to control an amplifier input bias generated by the bias interface circuit at the input of the distributed amplifier cell.

This application provides a distributed amplifier integrated circuit and a distributed amplifier. The distributed amplifier integrated circuit includes: a second terminal of a first gate inductor connected to a first terminal of a second gate inductor and a first terminal of an active gain unit; a second terminal of the active gain unit connected to a second terminal of a first drain inductor and a first terminal of a second drain inductor; a second terminal of the second gate inductor connected to a first terminal of a first gate inductor in a next distributed unit module; a second terminal of the second drain inductor connected to a first terminal of a first drain inductor in the next distributed unit module; a first terminal of the first drain inductor of the first distributed unit module connected to a drain module; a first drain inductor coupled to a first gate inductor; a second drain inductor coupled to a second gate inductor; a second terminal of the second gate inductor of the last distributed unit module connected to a gate module; and a second terminal of the second drain inductor of the last distributed unit module connected to a DC blocking module.

The present invention relates to the technical field of communications, and provides a Raman amplifier gain control method and a Raman optical fiber amplifier. The method comprises: inputting pump light of a corresponding wavelength into an optical fiber, and measuring out-of-band ASE power of the optical fiber in each preset frequency band; determining an actual gain coefficient of each preset frequency band on the basis of the out-of-band ASE power of each preset frequency band; matching the actual gain coefficient of each preset frequency band with a preset Raman gain coefficient of each preset frequency band, using an optical fiber corresponding to an actual gain coefficient having the highest similarity obtained by means of matching as a first optical fiber, and using an adjustment parameter of the first optical fiber to perform gain control of a Raman amplifier. The present invention, by means of deriving a Raman gain coefficient in reverse by using the out-of-band ASE power, can measure the Raman gain coefficient during the working process of the Raman amplifier, resolving the problem of it being difficult for a distributed amplifier to acquire a gain coefficient of optical fiber.

Multi-band electronic beam tilt for distributed amplifier antenna array. A first set of phase adjustment circuits within a low-power first-band RF transmit distribution network applies a first-band electronic beam tilt to a first-band RF transmit signal. A second set of phase adjustment circuits within a low-power second-band RF transmit distribution network applies a second-band electronic beam tilt to a second-band RF transmit signal. A first set of phase-adjusted first-band RF transmit signals is received at a set of RF front end modules that are distributed along an antenna array column. A second set of phase-adjusted second-band RF transmit signals is received at the set of RF front end modules. A set of subarrays of at least one radiating element is distributed along the antenna array column. Each subarray is connected to and positioned substantially adjacent to a corresponding RF front end module of the set of RF front end modules.

The present invention relates to the field of amplifier circuits (driver amplifiers) for electro-optical modulators, and is specifically used for amplifying electrical signals to drive the electro-optical modulators. The present invention proposes an amplifier circuit for amplifying signals, the amplifier circuit comprising a gain amplifier, a distributed amplifier, a resistor and a current source, wherein the input end of the distributed amplifier is electrically connected to the output end of the gain amplifier; the resistor is terminated at the input end of the distributed amplifier; and the current source is electrically connected in parallel to the resistor. The present invention also proposes a method for setting a bias voltage of such an amplifier circuit. In addition, the present invention also proposes a transmitter (specifically an optical transmitter) comprising such an amplifier circuit and a system comprising such a transmitter and a signal source.

The present invention belongs to the field of integrated circuit technology, specifically an ultra-wideband, low-noise distributed amplifier based on three-turn coupled inductors and multiple magnetically coupled feedback loops. The circuit structure of the present invention includes a three-stage distributed amplifier; the first and third-stage distributed amplifiers are composed of a four-stage gain unit, a three-turn coupled inductor, and a two-turn coupled inductor; the gain unit is a common-source common-gate structure, with the gate, source, and drain series inductors of the common-gate transistor forming a multiple magnetically coupled feedback loop; this structure increases the equivalent transconductance of the common-gate transistor, effectively reducing the noise contribution of the transistor; the three-turn coupled inductor serves as a unit circuit for the gate transmission line, including a gate transmission line unit inductor and a common-source transistor source series inductor; the two-turn coupled inductor serves as a unit circuit for the drain transmission line; the second-stage distributed amplifier is composed of a single-stage common-source common-gate gain unit; and the gate terminal circuit of the first-stage distributed amplifier effectively reduces the noise contribution of the resistor therein.

This invention discloses a parasitic cancellation gain unit and a distributed amplifier, belonging to the field of amplifier technology. The parasitic cancellation gain unit is a parasitic cancellation common-source cascode gain unit, comprising two groups of small transistors and multiple parallel embedded capacitors. Each group of small transistors includes four small transistors connected in parallel, and the two groups of small transistors respectively replace a single large transistor in the common-source and common-gate stages. The multiple parallel embedded capacitors are embedded in the traces of the connection capacitors and decoupling capacitors of the common-source cascode gain unit to cancel the influence of parasitic inductance generated by the traces. A distributed amplifier is composed of multiple stages of the above-mentioned parasitic cancellation gain units and input / output transmission lines. This invention solves the problems of limited bandwidth, significant parasitic effects, and large size of distributed amplifiers under traditional bulk CMOS technology.

A distributed amplifier system comprising an impedance matching network configured to match an input impedance to an output impedance of the signal source, and a DC block configured to block DC components in the input signal. A variable gain amplifier adjusts the gain applied to the input signal based on a gain control signal to generate a gain adjusted signal. An emitter follower circuit receives and processes the gain adjusted signal to introduce gain peaking to create a modified signal. A distributed amplifier receives and amplifies the modified signal from the emitter follower circuit, to create an amplified signal. The distributed amplifier includes a termination network and one or more impedance matching elements configured for gain shaping the amplified signal. The gain peaking introduced by the emitter follower circuit is controlled by a variable current source. The distributed amplifier may be an open collector distributed amplifier.