14 results about "Distributed amplifier" patented technology

The invention belongs to the field of integrated circuits, and relates to a distributed amplifier, in particular to a distributed amplifier based on a GaN process, which comprises N stages of traveling wave tube networks and a grid power supply bias network, the N stages of traveling wave tube networks comprise cascaded N traveling wave tube networks, and the Nth stage of traveling wave tube network outputs radio frequency signals; and the grid power supply bias network is used for providing bias voltage for the N-stage traveling wave tube network and is connected with the Nth-stage traveling wave tube network. Compared with a traditional distributed amplifier, according to the grid power supply bias network, a traditional grid absorption resistor is not connected with grid bias power supply voltage, the grid absorption resistor is divided into two resistors, and a filter capacitor is connected to the ground at an intermediate node of the two resistors; the tail end of the resistor is connected with grid bias power supply voltage, so that the bandwidth is expanded, and the stability of the circuit is improved; in addition, an input matching network is added to the input end of the amplifier, and input standing waves are optimized.

This baseband amplifier comprises: a distributed amplifier (10); an RF amplifier (11); a demultiplexer (12) that outputs, to a first output terminal, a signal, from among input signals, that includes at least a signal component that is at least a high-frequency-side cutoff frequency of the distributed amplifier (10), and that outputs, from a second output terminal to the RF amplifier (11), a signal, from among input signals, that includes at least a signal component that is at least a low-frequency-side cutoff frequency of the RF amplifier (11); a group delay adjuster (14) that is inserted between the first output terminal of the demultiplexer (12) and the input terminal of the distributed amplifier (10); and a multiplexer (13) that multiplexes the output of the distributed amplifier (10) and the output of the RF amplifier (11).

The application relates to the technical field of wireless communication, and provides a hybrid distributed power amplifier, which comprises a first amplifier module and a second amplifier module, the first amplifier module comprises at least two first stacked units, a first artificial transmission line and a second artificial transmission line, the output ends of the two first stacked units are electrically connected through the second artificial transmission line, the output end of the second first stacked unit serves as the output end of the first amplifier module, the sizes of the two first stacked units are sequentially decreased to form a non-uniform distribution arrangement, the second amplifier module comprises at least two second stacked units, a third artificial transmission line and a fourth artificial transmission line, the input end of the second stacked unit is connected with the input end of the first stacked unit, the second stacked unit is used for improving power synthesis and reducing loss, and the sizes of the two second stacked units are the same to form a uniform distribution arrangement. The application can improve the gain and efficiency of the distributed amplifier.

The utility model relates to a multifunctional microwave radio frequency amplifier which comprises a distributed amplifier, a drain reconfigurable module and a grid reconfigurable module, one end of the distributed amplifier is connected with an input signal, and the other end of the distributed amplifier outputs a signal. One end of the drain reconfigurable module is connected with the distributed amplifier, and the other end of the drain reconfigurable module is connected with a power supply Vdd to supply power to the distributed amplifier; one end of the grid reconfigurable module is connected with the distributed amplifier, and the other end of the grid reconfigurable module is connected with bias voltage Vg to provide grid bias for the distributed amplifier. Different output performances of the microwave radio frequency amplifier are realized through different reconstruction modes of the grid electrode and the drain electrode, corresponding configuration modes can be selected according to circuit design requirements, and the capability of outputting two performances of the same chip is realized.

An embodiment is a distributed amplifier including amplifier blocks, each of the amplifier blocks including a first transmission line to receive input of a signal to an input end, a second transmission line to output a signal from an output end, a first termination resistor having a first end connected to a terminal end of the first transmission line, a second termination resistor having a first end connected to an input end of the second transmission line, and unit cells arranged along the first and second transmission lines, each of the unit cells having an input terminal connected to the first transmission line and an output terminal connected to the second transmission line, the amplifier blocks are connected in cascade such that a terminal end of the second transmission line of one of the amplifier blocks is connected to the first transmission line of a subsequent amplifier block.

A distributed amplifier system comprising an impedance matching network configured to match an input impedance to an output impedance of the signal source, and a DC block configured to block DC components in the input signal. A variable gain amplifier adjusts the gain applied to the input signal based on a gain control signal to generate a gain adjusted signal. An emitter follower circuit receives and processes the gain adjusted signal to introduce gain peaking to create a modified signal. A distributed amplifier receives and amplifies the modified signal from the emitter follower circuit, to create an amplified signal. The distributed amplifier includes a termination network and one or more impedance matching elements configured for gain shaping the amplified signal. The gain peaking introduced by the emitter follower circuit is controlled by a variable current source. The distributed amplifier may be an open collector distributed amplifier.

An integrated distributed amplifier circuit can include an input transmission line structure comprising first unit cells including a first reactive circuit element and a first active circuit element, an output transmission line structure comprising second unit cells including a second reactive circuit element and a second active circuit element, and a termination circuit coupled to an end of the input transmission line structure. The termination circuit can include a current mirror circuit to establish a specified bias current for biasing respective first active circuit elements of the input transmission line structure. Such an approach can provide one or more of a broadband termination impedance and stable biasing conditions across different frequencies and power output levels.

An example amplifier includes a first transconductance circuit, which includes a first output coupled to a first current source, a first input, a first network, and a cascode circuit; and a second transconductance circuit, which includes a second output coupled to a second input and a second current source; wherein the first current source is coupled to a supply voltage and the second current source is coupled to an electrical ground; and wherein the first output is coupled to the second output.

The invention relates to the technical field of wireless communication, and provides a hybrid distributed power amplifier, the hybrid distributed power amplifier comprises a first amplifier module and a second amplifier module, the first amplifier module comprises at least two first stacking units, a first artificial transmission line and a second artificial transmission line; the output ends of the two first stacking units are electrically connected through a second manual transmission line, and the output end of the second first stacking unit serves as the output end of the first amplifier module; the sizes of the two first stacking units are gradually reduced in sequence so as to form non-uniform distribution arrangement; the second amplifier module comprises at least two second stacking units, a third manual transmission line and a fourth manual transmission line; the input end of the second stacking unit is connected with the input end of the first stacking unit; the second stacking unit is used for improving power synthesis and reducing loss; and the two second stacking units are the same in size so as to form uniform distribution arrangement. The gain and efficiency of the distributed amplifier can be improved.

This invention provides a CMOS ultra-wideband high-gain high-power amplifier, relating to the field of power amplifier technology. It includes a multi-drive improved Class D amplifier and a multi-stage compact coupled peaking distributed amplifier. The multi-stage compact coupled peaking distributed amplifiers are connected sequentially. The input RF signal is connected to the first-stage compact coupled peaking distributed amplifier via an input line. The output of the Nth-stage compact coupled peaking distributed amplifier is connected to the input of the multi-drive improved Class D amplifier via an output line. The output of the multi-drive improved Class D amplifier outputs the RF signal. The advantage of this invention is that it solves the problems of large area, low gain, and low output power in traditional distributed amplifiers.

Amplifiers with bias control for DC coupled single-ended distributed amplifiers of multi-stage amplifiers are described herein. An example amplifier with input bias control includes a distributed amplifier cell having an input coupled to a first distributed transmission line and an output coupled to a second distributed transmission line, an input coupling network coupled between the first distributed transmission line and the input of the distributed amplifier cell, and a bias interface circuit coupled between the input coupling network and the input of the distributed amplifier cell. The amplifier can also include a bias control circuit configured to control an amplifier input bias generated by the bias interface circuit at the input of the distributed amplifier cell.

This application provides a distributed amplifier integrated circuit and a distributed amplifier. The distributed amplifier integrated circuit includes: a second terminal of a first gate inductor connected to a first terminal of a second gate inductor and a first terminal of an active gain unit; a second terminal of the active gain unit connected to a second terminal of a first drain inductor and a first terminal of a second drain inductor; a second terminal of the second gate inductor connected to a first terminal of a first gate inductor in a next distributed unit module; a second terminal of the second drain inductor connected to a first terminal of a first drain inductor in the next distributed unit module; a first terminal of the first drain inductor of the first distributed unit module connected to a drain module; a first drain inductor coupled to a first gate inductor; a second drain inductor coupled to a second gate inductor; a second terminal of the second gate inductor of the last distributed unit module connected to a gate module; and a second terminal of the second drain inductor of the last distributed unit module connected to a DC blocking module.

The present invention relates to the technical field of communications, and provides a Raman amplifier gain control method and a Raman optical fiber amplifier. The method comprises: inputting pump light of a corresponding wavelength into an optical fiber, and measuring out-of-band ASE power of the optical fiber in each preset frequency band; determining an actual gain coefficient of each preset frequency band on the basis of the out-of-band ASE power of each preset frequency band; matching the actual gain coefficient of each preset frequency band with a preset Raman gain coefficient of each preset frequency band, using an optical fiber corresponding to an actual gain coefficient having the highest similarity obtained by means of matching as a first optical fiber, and using an adjustment parameter of the first optical fiber to perform gain control of a Raman amplifier. The present invention, by means of deriving a Raman gain coefficient in reverse by using the out-of-band ASE power, can measure the Raman gain coefficient during the working process of the Raman amplifier, resolving the problem of it being difficult for a distributed amplifier to acquire a gain coefficient of optical fiber.

This invention discloses a parasitic cancellation gain unit and a distributed amplifier, belonging to the field of amplifier technology. The parasitic cancellation gain unit is a parasitic cancellation common-source cascode gain unit, comprising two groups of small transistors and multiple parallel embedded capacitors. Each group of small transistors includes four small transistors connected in parallel, and the two groups of small transistors respectively replace a single large transistor in the common-source and common-gate stages. The multiple parallel embedded capacitors are embedded in the traces of the connection capacitors and decoupling capacitors of the common-source cascode gain unit to cancel the influence of parasitic inductance generated by the traces. A distributed amplifier is composed of multiple stages of the above-mentioned parasitic cancellation gain units and input / output transmission lines. This invention solves the problems of limited bandwidth, significant parasitic effects, and large size of distributed amplifiers under traditional bulk CMOS technology.