53 results about "Artificial transmission line" patented technology

The invention publishes a random dual-frequency Wilkinson power division of fully based on the compound right-hand transmission line which includes three ports, four right hand transmission lines and two left hand transmission lines and the isolating resistor; the method steps include obtain the frequency ratio of the work frequency pots, establish the phase-shift value of transmission line, establish the port transmission line, establish the right hand transmission line, establish the left hand transmission line, and establish the isolating circuit. The invention prepared shrink type and the compact random dual-frequency power division of the double festival impedance conversion technology, overcomes the work flaw of the traditional power division only works on the odd number frequency multiplication, the branch line length can reduces to (lambda /4) Alpha below, satisfies the dual-frequency work at the same time has compact structure. The power division design is simple, the microwave plate and the primary device is easy to obtain, convenient for the processing. The invention power division can good satisfied the performance requirement on two work frequency place.

The invention discloses a series feed type waveguide corrective network. The series feed type waveguide corrective network adopts waveguide type main transmission lines and a coupling transmission line, which have the same type and broadside size, the main transmission lines and the coupling transmission line are vertically crossed and share one public wall, and two coupling holes whose centers are located on a diagonal are arranged in each public wall. Different coupling quantities can be realized through fine tuning of the sizes and the offsets of the coupling holes. In comparison with the prior art, the series feed type waveguide corrective network has the following advantages that the coupling degree is larger (about -30dB or larger), the directionality is good (better than -16dB), and the series feed type waveguide corrective network is used for correcting inconsistency of channels in a phased-array antenna system and is suitable for a phased-array system at high frequency (Q waveband or above) and can be used as a corrective network for a phased-array communication antenna system.

The invention relates to a miniaturized harmonic suppression equal-dividing power divider based on an H-type defect ground artificial transmission line, which belongs to the field of radio frequency microwave circuits. The power divider comprises a dielectric substrate; a metal microstrip is arranged on one surface of the dielectric substrate, and comprises a metal microstrip surface portion of two sections of H-type defect ground artificial transmission lines, a signal input port microstrip line, signal first and second output port microstrip lines and a patch isolation resistor; each sectionof the H-type defect ground artificial transmission line has a bilateral symmetrical structure and comprises two sections of folded thin transmission lines, two sections of vertical short thin transmission lines, two sections of horizontal thin transmission lines, two sections of short rectangular open circuit branches, two sections of vertical long thin transmission lines, a section of horizontal thick transmission line, two long rectangular open circuit branches and an H-type defect ground structure etched on a metal grounding plate. Compared with the traditional power divider, the power divider disclosed in the invention has a significantly smaller size and has a good harmonic suppression capability for a wide stop band formed by the harmonics.

Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

The invention provides a high-flatness broadband amplifier, comprising a distributed amplifier and a feedback compensation circuit. One end of each feedback compensation branch in the feedback compensation circuit is connected with a control end of a corresponding transistor in the distributed amplifier, and the other end is grounded. The feedback compensation branches access impedances of corresponding values to the control ends of the corresponding transistors, so parasitic parameters of the transistors are variable parameters. The parasitic parameters cause cut-off frequencies of artificial transmission lines to be changed along with the change of input signal frequencies, so the flatness of the distributed amplifier is optimized.

A phase shifter for altering the phase of a radio frequency signal is disclosed herein. A Lange coupler is used having reflective ports that are coupled to artificial transmission lines. The artificial transmission lines provide a reflection transmission path, the length of which can be determined by digital control lines. Transistors placed along the length of the central trace provide independent paths to ground that serve to shorten the electrical length of the ATL. Accordingly, by selectively turning the transistors on/off, the electrical length of the ATL can be selected and thus the amount of phase delay introduced by the phase shifter.

The invention discloses an adjustable distributed amplifier circuit. The adjustable distributed amplifier circuit comprises a plurality of gain units, input on-chip inductors and output on-chip inductors, wherein the input on-chip inductors are connected to input ends of the gain units; the output on-chip inductors are connected to output ends of the gain units; two NMOS (N-Channel Metal Oxide Semiconductor) transistors are connected in series between the input ends of at least one group of two adjacent gain units; the NMOS transistors and the input on-chip inductors construct a band-pass matching network; respective source electrodes and drain electrodes of the two NMOS transistors are connected together; the NMOS transistors are connected to a bias voltage through a first bias resistor; and the input ends of the gain units are connected with second bias resistors in order to apply second bias voltages to the other ends of the second bias resistors. The NMOS transistors which can be equivalent to variable capacitors are introduced in order to isolate direct-current biases at the input ends of the gain units, so that the matching network input into an artificial transmission line can be debugged after processing. Thus, the risk of failure in processing verification due to factors such as poor modeling inaccuracy or process deviations is lowered.

The invention discloses a distributed power amplifier, comprising multiple gain units connected in parallel between the input end and the output end, wherein each gain unit is composed of two sub-gain units, the each two adjacent gain units are connected by an inductor, the input impedances of the two sub-gain units of each gain unit and the inductors respectively connected with the input ends of the two sub-gain units jointly form two input artificial transmission lines, the output impedances of the two sub-gain units of each gain unit and the inductors respectively connected with the output ends of the two sub-gain units jointly form an output artificial transmission line, and inductors are further connected between two ends of the input and output artificial transmission lines. According to the distributed power amplifier, the output transmission lines of the two sub-gain units are combined, and thereby the limitation of the equivalent input capacitances of the gain units on the bandwidth of the distributed power amplifier is effectively overcome.

The invention discloses an ultra-wideband amplifier based on Darlington stacked tubes. The ultra-wideband amplifier comprises a second-order matrix input distribution network, a second-order matrix interstage balance network, a second-order matrix output synthesis network, a first Darlington stacked tube, a second Darlington stacked tube, a third Darlington stacked tube, a fourth Darlington stacked tube and a feed network connected with the second-order matrix interstage balance network and the second-order matrix output synthesis network. A core framework adopts a matrix amplification networkconsisting of the first to fourth Darlington stacked tubes, and the influence of the Darlington stacked tubes on artificial transmission lines in the matrix amplification network is considered, so that the accuracy of circuit design is greatly improved, the later debugging difficulty of the circuit is reduced, and the whole power amplifier has a good broadband high-gain and high-power output capability.

The invention discloses a two-dimensional synthesis distribution type high-power linear broadband power amplifier. The power amplifier comprises a broadband input driving power division amplificationnetwork, a power supply bias network, a final-stage PMOS distribution amplification network, a final-stage NMOS distribution amplification network and a final-stage artificial transmission line. The core architecture of the power amplifier adopts the characteristics of high power and high gain of a high-gain three-pile stacked adaptive amplification network in a microwave band; and meanwhile, theultra-wideband frequency response characteristic and the simplified series voltage division structure of the two-dimensional synthesis distributed amplifier structure are utilized, so that the whole power amplifier obtains good wideband, high gain, high efficiency and high power output capability, and a power supply network is simple.

The invention discloses an ultra-wideband gradient temperature compensation distributed microwave power amplification chip, and belongs to the field of microwave radio frequency chips. The power amplifier comprises a cascode amplification structure, an input artificial transmission line and an output artificial transmission line, the cascode amplification structure comprises a plurality of stages of cascode amplification networks with the same structure, and the input end of each stage of cascode amplification network is connected with the input artificial transmission line. The output end of each stage of cascode amplification network is connected with the output artificial transmission line, and each stage of cascode amplification network comprises a cascode amplification unit, an RC stabilization unit, a first grid voltage temperature compensation voltage division unit, a grid-to-ground unit, a second grid voltage temperature compensation voltage division unit, a matching capacitor and a first bias resistor. The high-frequency gain and the power bandwidth are expanded through the transistors of which the sizes are reduced step by step and the independently matched artificial transmission lines, and the temperature compensation of the grid voltage of the transistors is realized by utilizing the resistance characteristics of different temperature coefficients.

The invention discloses a Darlington distributed power amplifier based on a linearization stacking technology, comprising a distributed linearization stacked Darlington transistor amplification network, a linearization stacked Darlington transistor input distribution network and a linearization stacked Darlington transistor output synthesis network. A core architecture of the invention adopts thedistributed linearization stacked Darlington transistor amplification network, and the amplification network is composed of three distributed Darlington transistors based on the linearization stackingtechnology at least; meanwhile, the invention considers influence of a two-transistor linearization stacked Darlington transistor on equivalent capacitance of an input and output artificial transmission line, accuracy of circuit design is greatly improved, and difficulty of circuit debugging in later period is reduced, so that the whole power amplifier obtains good broadband power output capability and power gain capability, and stability and reliability of a circuit are improved.

The invention discloses a carrier communication electronic system based on a bunched power line. The system comprises a power supply line, a power supply line communication interface circuit and stand-alone; a signal is transmitted through the power supply line; and the stand-alone is connected with the power supply line through the power supply line communication interface circuit so as to receive or send the signal. The bunched power line disclosed in the invention is the power supply line, and the signal transmission line; each stand-alone is connected to the power line through the power supply communication interface circuit to realize the acquisition of own energy and the mutual information transmission; the bunched cable complexity is reduced, the production cost is saved, the systemreliability is improved, and the system has the research and development value.

The invention discloses an ultra-wideband high-power amplifier. The amplifier comprises an input artificial transmission line matching network, an input absorption load, a high-power low-frequency amplification network, a first medium-power medium-frequency amplification network, a second medium-power medium-frequency amplification network, a high-power high-frequency amplification network, an output artificial transmission line matching network and an output absorption load. According to the invention, the advantages of a single transistor structure amplifier and a distributed amplifier are combined, the ultra-wideband high-power amplifier has the advantages of being high in power output capacity, high in power gain, good in input and output matching characteristics, low in cost and the like under the ultra-wideband condition, meanwhile, the low breakdown voltage characteristic needing to face the integrated circuit technology in the design of the high-power power amplifier is avoided, and the stability and reliability of the circuit are improved.

The invention discloses a distributed power amplifier based on a feedback type two-stage Darlington tube. The distributed power amplifier comprises a distributed feedback type two-stage Darlington tube amplification network, a feedback type two-stage Darlington tube input distribution network, and a feedback type two-stage Darlington tube output synthesis network, the core architecture of the distributed power amplifier disclosed by the invention adopts the distributed feedback type two-stage Darlington tube amplification network, the amplification network is at least composed of three distributed feedback type two-stage Darlington tubes, meanwhile, the influence of the feedback type two-stage Darlington tubes on the equivalent capacitance of a manual transmission line is considered in the distributed power amplifier disclosed by the invention, so that the circuit design accuracy is greatly improved, the subsequent debugging difficulty of the circuit is reduced, the whole power amplifier obtains good broadband power output capability and power gain capability, and the stability and reliability of the circuit are improved.

A filter which highly attenuates CW signals within specified frequency bands while allowing baseband pulses to pass therethrough with relatively low attenuation is provided. The filter comprises a main transmission line and stub transmission lines that are coupled in parallel relationship with the main transmission line. Each of the stub transmission lines is terminated with a short circuit or other appropriate impedance and is of such a length that a pulse coupled thereto from the main transmission line and reflected from the terminating impedance will arrive at the coupling plane with the main transmission line after the pulse propagating on the main transmission line has completely passed the coupling plane, thus eliminating the possibility of cancellation of any portion of the propagating pulse. The length, spacing and terminating impedance of each of the stub transmission lines is selected to provide stop bands for CW signals so that a pulse is coupled to the output terminals of the filter that is substantially free of CW interfering signals that may exist at the input terminals thereof.

A phase shifter for altering the phase of a radio frequency signal is disclosed herein. A Lange coupler is used having reflective ports that are coupled to artificial transmission lines. The artificial transmission lines provide a reflection transmission path, the length of which can be determined by digital control lines. Transistors placed along the length of the central trace provide independent paths to ground that serve to shorten the electrical length of the ATL. Accordingly, by selectively turning the transistors on/off, the electrical length of the ATL can be selected and thus the amount of phase delay introduced by the phase shifter.

An electrical circuit can be formed at least in part using lumped or discrete circuit elements to provide an artificial transmission line structure that can mimic the electrical properties of a corresponding actual transmission line structure. Such an artificial transmission line structure can generally consume less area than an actual transmission line structure lacking such lumped or discrete elements. Such an artificial transmission line structure can be formed using two or more “unit cells” such as by cascading such cells as shown and described herein. The present inventors have recognized, among other things, that a unit cell of an artificial transmission line structure can include a t-coil section comprising magnetically-coupled inductors. Such an artificial transmission line structure can be used for applications such as phase shifting or to provide a delay line having a substantially constant group delay, among other applications.

The invention discloses a Darlington distributed power amplifier based on a triode stacking technology. The Darlington distributed power amplifier comprises a distributed stacked Darlington tube amplifying network, a stacked Darlington tube input distribution network and a stacked Darlington tube output synthesis network. The core architecture of the scheme of the invention adopts the distributedstacked Darlington tube amplifying network, wherein the amplifying network consists of at least three distributed stacked Darlington tubes based on a stacking technology; and meanwhile, the scheme ofthe invention considers the influence of the stacked Darlington tubes with a two-transistor stacking structure on the equivalent capacitance of artificial transmission lines, so that the accuracy of the circuit design can be greatly improved, the difficulty of debugging circuits in a later period can be reduced, the entire power amplifier can obtain good broadband power output capabilities and power gain capabilities, and the stability and reliability of the circuits can be improved.