12 results about "Darlington transistor" patented technology

The invention discloses a sectional type grid-control Darlington transistor device structure and a manufacturing method thereof. The sectional type grid-control Darlington transistor device structure comprises a substrate P-Sub; a first N-Drift region is arranged in the substrate P-Sub; a first NW region, a first PW region and a second PW region are arranged above the N-Drift region; a first P + injection region and a first N + injection region are arranged in the first NW region; a second N + injection region, a second P + injection region and a third N + injection region are sequentially arranged in the first PW region from left to right; a third P + injection region, a fourth N + injection region and a fourth P + injection region are arranged in the second PW region; a first polysilicon gate is arranged between the second field oxide isolation region and the second N + injection region; therefore, the MOS current is amplified through the current gain of the two-stage NPN transistor, and an outflow channel is provided for carriers stored in the drift region through the sectional anode structure, so that the rapid turn-off of the device is realized, and the grid-control bipolar device with high current density and low turn-off loss is formed.

FIELD: electrical engineering.SUBSTANCE: development of pulsed electrical energy converters as a driver for controlling a power transistor. The invention aims to solve is to expand the scope of application of the driver and increase its reliability. Unipolar power supply of the driver is achieved by replacing the comparator with a Darlington transistor circuit, connected to the input through a series resistive-capacitive circuit to the point where the amplified control signal is supplied, and to the common point of the circuit via a resistor and a diode parallel to it. The amplification of the input control pulse is achieved by connecting a field-effect transistor between the control signal supply point, the common point of the circuit, and the terminal of the primary winding of the gate transformer, opposite to the one connected to the power supply point through a current-limiting resistor, which amplifies the input control signal.EFFECT: expansion of the driver's application area in push-pull circuits due to the presence of active locking, simplification of the driver's power supply circuit, and simplification of the control circuits due to the inclusion of an amplifier in the driver.1 cl, 1 dwg

The utility model relates to the technical field of Darlington driving circuits, in particular to a low-threshold-voltage Darlington driving circuit, which comprises a transistor T1, a transistor T2, a common end of a clamping diode, a resistor R1, a resistor R2 and a resistor R3. The resistor R1 is connected between the input (B) and the transistor T1; according to the Darlington transistor circuit, the starting voltage of the Darlington transistor circuit can be reduced from more than 2V to a typical value 1.6 V, the Darlington transistor circuit can be further applied under the condition that an input signal is 1.8 V, and the application of the Darlington transistor circuit is greatly expanded.

The utility model relates to an operation panel alarm processing system supporting independent dimming. A circuit board of the operation panel alarm processing system comprises an embedded MCU, a CAN communication circuit, a first group of chips, a second group of chips and a plurality of indicating lamp control circuits, wherein the first group of chips and the second group of chips are composed of a plurality of shift register chips. The embedded MCU comprises a CAN controller, an SPI controller and a PWM controller. The indicator light control circuit comprises an indicator light and two Darlington tubes. The CAN controller obtains a dimming instruction level and corresponding indicator light on-off and brightness information, adjusts the duty ratio of PWM1 and PWM2 signals through the PWM controller so as to control the output level of a QnA pin and the output level of a Qn pin respectively, achieves grouping control through sharing SCLK signals and utilizing CS1 and CS2, and achieves the dimming control through the cascade design of the SPI controller and the shift register chip set. The state and brightness of each indicating lamp can be independently and accurately controlled, occupation of MCU pins is remarkably reduced, sailors can find alarm information in the early stage, and losses caused by the fact that the alarm information is not processed in time are reduced.

This application relates to the field of power switching technology, and discloses a firmware-controlled peripheral interface power adaptive switching system and method. The method involves: upon detecting a peripheral connection, providing a basic power supply voltage to the peripheral and initializing the UART serial communication interface; sending a model query command to the peripheral and extracting the peripheral model identifier string from the response frame to generate a relay control command; controlling a Darlington transistor array driver chip to drive the coil of a double-pole double-throw relay, switching the connection state of the relay's common terminal contact, and reading the voltage and current measurements of the peripheral; calculating the peripheral's power value, and encapsulating the power value and power supply mode status into a status data packet and transmitting it to the peripheral management software. This application transforms power supply configuration from hardware mechanical operation to firmware intelligent control, realizing plug-and-play, zero-error configuration, and visual management of peripheral power supply, reducing production costs and maintenance difficulty, and improving the intelligence level of peripheral interface power management.

According to the over-current protection device and the over-current protection method, a Darlington tube and a field-effect tube are connected in series to form a high-low level switching output mode given by an upper processor, on the basis, an FPGA chip and an over-current protection mechanism are configured, the FPGA chip accesses an acquisition chip according to a set period, then a current acquisition value is compared with a set rated current, and the over-current protection device and the over-current protection method are provided. And when the number of times that the current current value continuously exceeds the preset protection threshold value meets the preset number of times and the duration that the current value exceeds the preset protection threshold value is smaller than the preset duration, the processing chip locks the circuit and stops outputting power to lower-level equipment, so that additional large-size equipment does not need to be introduced, and the cost is reduced. The current value of the circuit is detected in real time, meanwhile, a protection mechanism is made to intervene more quickly under the loose condition, and the Joule integral curve is segmented, so that different over-current protection time is set for different current currents in an application scene, and the method can adapt to multiple subordinate devices.

The present invention discloses a Darlington driver chip with a two-wire communication protocol, relating to the field of household appliances. The chip comprises: a signal input port for receiving a serial data signal from a data signal output port based on a clock signal outputted by a clock signal output port, and transmitting the received serial data signal to a data receiving module; a data receiving module for extracting address data from the address field of the serial data signal, comparing the address data with the address bits of the current Darlington driver chip; and, when the address bits match the address data, extracting function data and control data from the function field and control field of the serial data signal, transmitting the function data and control data to a logic control module. The logic control module also receives feedback from the logic control module regarding abnormal data related to the Darlington driver chip and Darlington transistors; and a logic control module for sending control signals based on the function data and control data. This solution implements the control and communication functions of multiple Darlington transistors using two signal lines.

A protective circuit capable of preventing error voltage access, comprising a first unidirectional conduction element, a triode control circuit, a first triode, a first capacitor, a Darlington transistor, a first resistor, a second resistor, and a relay. A contact of the relay is connected in series between an input end and an output end. The first unidirectional conduction element has a first end connected to the input end and a second end that is connected to a first end of each of the first resistor, the first triode, the first capacitor, and the Darlington transistor, respectively. The triode control circuit is connected to a second end of the first resistor and a controlled end of the first triode, respectively, and a second end of the Darlington transistor is connected to a controlled end of the relay. According to the present invention, the input end can be disconnected from the output end when an error voltage is input.

The utility model relates to the technical field of energy storage devices, in particular to a super capacitor module. The super capacitor comprises a plurality of series-connected super capacitor monomers and a plurality of passive equalization circuits, and each monomer corresponds to one passive equalization circuit. A voltage dividing network of the passive equalization circuit is formed by connecting resistors R1 and R2 in series and is in bridge connection with the positive electrode and the negative electrode of the super capacitor monomer, and the reference end of the voltage reference chip is connected with a voltage dividing node and used for monitoring monomer voltage. And when the single voltage exceeds a set threshold value, the voltage reference chip drives the Darlington tube, so that the resistors R61 and R62 establish an energy dissipation loop until the voltage falls back. The module also has the functions of overvoltage alarm and internal temperature monitoring, overvoltage alarm is realized through an LED and an optocoupler, and temperature is led out through voltage division of an NTC sensor. The module adopts the switch resistance type passive equalization circuit, so that the circuit structure is simplified, the number of elements and the hardware cost are reduced, and the overall energy utilization rate and the working performance of the module in a high-power multi-cascade scene are improved.

The utility model discloses a charging circuit capable of switching a power supply. The charging circuit comprises a switching power supply, a solar controller, a storage battery, a relay, an operational amplifier, a photoelectric coupler, a Darlington transistor array, a DC-DC isolation power supply module, a single-chip microcomputer, a voltage stabilization source and a synchronous switch voltage reduction converter integrated with various fast charging protocols. The synchronous switch step-down converter preferentially uses a storage battery as a power supply, and the power supply is output through an interface terminal connected with the synchronous switch step-down converter after conversion so as to charge a shared power bank or a mobile phone. Meanwhile, the voltage of the storage battery is detected by using the single-chip microcomputer and compared with a threshold voltage value set in the single-chip microcomputer, and then the switching power supply or the storage battery is switched to serve as a power supply of the synchronous switch step-down converter by combining modules such as an operational amplifier, a photoelectric coupler, a relay and a Darlington transistor array. According to the charging circuit capable of switching the power supply, the threshold voltage can be conveniently and accurately set, so that solar energy is fully utilized to charge a shared power bank or a mobile phone.

This invention discloses a generator short-circuit excitation circuit. Two current transformers are installed on the generator stator winding output line. The secondary sides of the two current transformers are connected in series and then connected to a three-phase transformer. The output of the three-phase transformer, after being rectified, is connected in parallel with the collector and emitter of a transient suppression diode, a Zener diode, and a Darlington transistor. A Zener diode is connected in parallel between the collector and base of the Darlington transistor, and a resistor is connected in parallel between the emitter and base. The collector of the Darlington transistor is connected in series with a diode and then to the positive terminal of the excitation power supply. The base of the Darlington transistor is connected in series with a Zener diode and a resistor and then to the positive terminal of the excitation power supply. The emitter of the Darlington transistor is connected to the negative terminal of the excitation power supply. This invention switches the generator from voltage source excitation mode to current source excitation mode when a short-circuit fault occurs, ensuring sufficient short-circuit capacity and enabling rapid operation of relay protection devices, thereby improving the power supply reliability of the power system.

The present invention discloses a gallium nitride Darlington transistor and its preparation method, belonging to the technical field of semiconductor electronic devices. The transistor comprises a driver transistor and an output transistor, both of which contain, from bottom to top, a collector region, a base region, an emitter region, and corresponding collector, base, and emitter electrodes. The driver transistor emitter is electrically connected to the output transistor base, and the collectors are connected in parallel. The output transistor active area is n times that of the driver transistor (n>1). Preparation methods include discrete integration and on-chip integration. This invention significantly improves the current amplification factor through a cascade structure, leveraging the advantages of gallium nitride materials, filling the technical gap of gallium nitride Darlington transistors and being suitable for high-temperature, high-voltage, and high-frequency scenarios.