93 results about "Darlington transistor" patented technology

An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry is provided herein. In one embodiment, a circuit for protecting an integrated circuit from ESD includes a protected circuit node in the integrated circuit, a multiple stage transistor pump circuit coupled to the protected circuit node, and an electrostatic discharge protection circuit having a trigger coupled to the multiple stage transistor pump circuit. The multiple stage transistor pump circuit may comprise a Darlington transistor pump circuit.

A protection circuit is disclosed that protects a semiconductor device from damage due to an electrostatic discharge. One such protection circuit comprises a vertical pnp hetero-junction bipolar transistor (HBT) connected between terminals such as supply terminals of the device, configured to conduct during an electrostatic discharge. The protection circuit also comprises a trigger circuit, such as a transient activated RC circuit connected between the terminals to detect the electrostatic discharge and control the transistor based on the detected electrostatic discharge. A Darlington transistor pair in the trigger circuit can be used to multiply the effective capacitance and HBT drive current. The HBT transistor absorbs energy from the electrostatic discharge and clamps the over-voltage across the terminals. The protection circuit may also be used across other I / O terminals of the device.

An apparatus comprising a Darlington transistor pair and a common-base transistor. The Darlington transistor pair may be configured to generate an output signal in response to an input signal. The common-base transistor may (i) be coupled between an output transistor of the Darlington transistor pair and the output signal and (ii) have a base configured to receive a frequency dependent reference voltage.

The present invention discloses a power source input overvoltage protection circuit, which comprises an overvoltage comparator and a Darlington transistor controlled by the overvoltage comoparator. The input ends of the overvoltage and the Darlingto transistor are respectively connected with the input ends of the overvoltage protection circuit, therefore the output end of the Darlington transistor is connected with the output end of the overvoltage protection circuit; the overvoltage comparator controls the on and off of the Darlington transistor; upon the power source input voltage surpassesthe preset overvoltage value of the overvoltage protection circuit, the Darlington transistor is off, and the overvoltage protection circuit is cut off; otherwise the Darlington transistor is on, thepower source input voltage goes through the Darlington transistor and then is output from the output end. The technical plan regarding the present invention adopts pure hardware circuit to realize with simple circuit and at low costs, has commonality, much higher reliability and swift response.

An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry is provided herein. In one embodiment, a circuit for protecting an integrated circuit from ESD includes a protected circuit node in the integrated circuit, a multiple stage transistor pump circuit coupled to the protected circuit node, and an electrostatic discharge protection circuit having a trigger coupled to the multiple stage transistor pump circuit. The multiple stage transistor pump circuit may comprise a Darlington transistor pump circuit.

An apparatus comprising a Darlington transistor pair and a bias circuit. The Darlington transistor pair may be configured to generate an output signal at an output node in response to an input signal received through an input node. The bias circuit may be coupled between an output transistor of said Darlington transistor pair and the input node. The bias circuit generally comprises (a) a bias transistor, (b) a bypass capacitor, and (c) a resistor connected between a base of the bias transistor and base of the output transistor.

The invention relates to an anti-slide valve power supply control circuit of a high speed train. The anti-slide valve power supply control circuit mainly comprises an isolation optical coupler, an MOSFET (Metal-Oxide-Silicon Field-Effect Transistor), a Darlington transistor, two charging and discharging capacitors, a power supply control relay and necessary resistors. The circuit smartly utilizes the matching of the MOSFET and the Darlington transistor to respectively complete charging and discharging of capacitors so that the relay keeps an electrification state when PWM (Pulse Wavelength Modulation) signals are input. The make-and-break of the MOSFET (Metal-Oxide-Silicon Field-Effect Transistor) and the Darlington transistor is realized through the PWM signals so as to realize charging and discharging of the capacitors in each stage and maintain the control of a driving output relay. When the PWM control signals are in failure, the relay can be quickly cut off, and an anti-slide power supply is reliably cut off under the condition that the anti-slide valve or a driving circuit thereof or the anti-slide valve power supply control circuit is in failure, so that normal work of a braking system is ensured, and the safety and reliability of the braking system and the high speed train are improved.

The present invention provides a panel, including: a plurality of pixel circuits disposed in rows and columns and each including a light emitting element for emitting light in response to driving current, a sampling transistor for sampling an image signal, a driving transistor for supplying the driving current to the light emitting element, and a storage capacitor for storing a predetermined potential; a power supplying section configured to supply a predetermined power supply voltage to the pixel circuits disposed in rows and columns; and a power supply line for connecting all of the pixel circuits disposed in rows and columns and the power supply section to each other.

The present invention discloses a high-gain broad-band amplifier circuit that has temperature compensation and consists of a traditional Darlington transistor based routine radio frequency broad band amplifier circuit, a diode 13 that is connected with the dividing resistor 21 in the traditional Darlington transistor based routine radio frequency amplifier circuit, the collector of the diode 13 is connected with the base electrode of the transistor 11 in the traditional Darlington transistor based routine radio frequency broad band amplifier circuit, the collector 13 of the diode 13 is connected with the base electrode of itself, the emitter of the diode 13 is connected with the emitter of the transistor 11 through the dividing resistor 24 and the ballasting resistor 23. The present invention has the advantages of reducing the negative feedback of the amplifier circuit, improving the gain of the amplifier circuit, reducing the changes of the base electrode circuit that are caused by voltage drop changes of the transistor 11 and transistor 12 and gaining the function of compensating the temperature of the circuit.

An apparatus comprising a Darlington transistor pair, a first common-base transistor and a second common-base transistor. The Darlington transistor pair may be configured to generate an output signal in response to an input signal. The first common-base transistor may be coupled between the Darlington transistor pair and the output signal. The second common-base transistor may also be coupled between the Darlington transistor pair and the output signal. The first and second common-base transistors may each have a base configured to receive a reference voltage.

The invention discloses a contact feedback type relay control system and relates to the electronic and electrical field. The control system comprises a single chip microcomputer, a plurality of relay driving circuits and a plurality of relay control circuits, wherein the single chip microcomputer outputs a plurality of channels of control signals and are connected with signal input ends of the plurality of relay driving circuits respectively, each of the plurality of relay driving circuits adopts a Darlington transistor array chip which comprises an emitting electrode, a common port, a plurality of signal input ends and a plurality of driving signal output ends, driving signal output ends and signal input ends are in the one-to-one correspondence relationship, emitting electrodes are grounded, common ports are connected with a power supply, one end of each of relay control circuits is connected with one driving signal output end of relay driving circuits, the other end of each of relay control circuits is connected with the power supply. According to the contact feedback type relay control system, the structure of an input control circuit is changed, so that on the premise that the relay closing is guaranteed, the current of the control circuit can be reduced, the voltage at two ends of a relay on the input side can be reduced, and the power consumption required by controlling of the relay can be reduced.

The invention discloses a magnetorheological fluid continuously variable transmission and belongs to the technical field of transmissions. The magnetorheological fluid continuously variable transmission comprises a magnetorheological fluid transmission device and a rotation speed adjusting circuit; and the rotation speed adjusting circuit comprises a rotation speed sensor, a magnet exciting coil, a voltage amplifier, a speed adjusting resistor R1, a resistive divider R2, a current limiting resistor R3, a resistor R4, a resistor R5, a filter capacitor C1, a negative feedback capacitor C2, a positive feedback capacitor C3, a transistor Q1, a Darlington transistor Q2, a fly-wheel diode D1, a voltage-regulator diode ZD1, a switch SW and a direct current power supply BAT. The magnetorheological fluid continuously variable transmission has the advantages of simple structure, small size, high reliability, strong stability, good effect of controlling rotation speed and high accuracy.

The invention provides a multirange full automatic high precision pull control system, belonging to the technical field of automatic control. The invention is characterized in that the control system is mainly composed of a control panel and a manual operator, wherein, the input signal collection of the control panel adopts differential complete floating circuit design, utilizes a high-impendence common-mode interference amplifying circuit, selects an AD chip of ICL 7135 with conversion frequency of 500KHz and inversion period of 80ms which is integral multiples of a power frequency interference period, and also selects dual-integral AD conversion method to effectively inhibit the interference of power frequency; a transformer is designed with the isolation of power and is used for filtering, and also has the function of DC-DC digital analogy isolation; median filtering technology is used for the software; the power part of a control panel sensor adopts an OP07 transmittal circuit, Darlington crystal valve driving, isolation filtering technology and MC 1403 as reference source. The invention has the advantages that verification of instruments or meters comprising liquidometer can be realized; good man-machine interactive interfaces are provided; the precision of signal acquisition can reach plus or minus 0.2 per mille; the precision of 10 V standard power of the tensile sensor can reach plus or minus 2 mV, and the power is 250 mW.

In accordance with an embodiment, a high voltage switching and control circuit for an implantable medical device (IMD) is provided that comprises a high voltage positive (HVP) node configured to receive a positive high voltage signal from a high energy storage source; and a high voltage negative (HVN) node configured to receive a negative high voltage signal from a high energy storage source. First and second output terminals are configured to be connected to electrodes for delivering high voltage energy. First and second Silicon Controlled Rectifiers (SCR) switches are connected to the HVP node, the first and second SCR switches connected to the first and second output terminals respectively, wherein the first and second SCR switches each include a Darlington transistor pair having a first transistor stage joined to a second stage transistor at a common collector node.

The invention provides a cubic LED desk lamp based on motion and muscle current signal control and a method. The cubic LED desk lamp comprises equipment used for detecting gestures and equipment used for controlling lighting, wherein the equipment used for detecting gestures can be worn on the wrist of the left hand or the right hand of a user and comprises a muscle current sensor EMG_Sensor, a motion sensor, a first wireless transmission module and a first main control chip; the equipment used for controlling lighting comprises an eight Darlington transistor driver module, a second wireless transmission module and a second main control chip. The defects of unavailable remote operation and poor illuminating effect in the prior art are overcome by adopting the method.

The invention relates to a program-controlled electronic load device with a compensating power supply. A conventional electronic load device has the defects of low resolution and low automation level. In the invention, a microprocessor module is connected with a first D / A (Digital / Analog) conversion module, an electronic load regulation module and an electronic load output module to form a program-controllable electronic load, and the microprocessor module is connected with a second D / A conversion module, a compensating power supply regulation module, a compensating power supply output moduleand an A / D (Analog / Digital) conversion module to form a closed-loop program-controllable electronic load compensating power supply. The microprocessor module is connected with a serial communication module to realize communication with an upper computer and other CPUs (Central Processing Units). By utilizing a Darlington transistor with the characteristics of high response speed, good stability, small power consumption, low noise and long service life, the invention realizes the electronic load device with the compensating power supply, which is free from mechanical contacts and moving parts and has the characteristics of fast response, high sensitivity, low noise, long service life and reliable performance.

The invention discloses a stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit, which is used for improving the performance of a rectifying device. The conducting circuit consists of a metal oxide semiconductor field effect transistor (MOSFET) in which a parasitic diode is arranged, a Darlington transistor and a resistor, wherein an emitter of a first Darlington transistor is connected with a source of the MOSFET through a first resistor; a collector of the first Darlington transistor is connected with a grid of the MOSFET; a collector of a second Darlington transistor is connected with a drain of the MOSFET; a base of the first Darlington transistor and a base of the second Darlington transistor are in short circuit connection with an emitter of the second Darlington transistor and then are connected with a positive pole of a driving power supply through a second resistor; and the grid of the MOSFET is connected with the positive pole of the driving power supply through a third resistor. Compared with a traditional control circuit, the conducting circuit ensures that four operational amplifiers are replaced by two Darlington transistors, and has the advantages of simple structure, low cost, high response speed, reaction time in a nanosecond grade, no reverse current and stable and reliable work.

The invention discloses a broadband low-noise amplifier of an improved Darlington structure. The amplifier comprises a Darlington tube, an active bias circuit, a feedback circuit, an input coupling circuit and an output coupling circuit; one end of the input coupling circuit is an amplifier signal input end, and the other end of the input coupling circuit is connected with the grid of the Darlington transistor; one end of the active bias circuit and one end of the feedback circuit are connected with the grid electrode of the Darlington transistor, and the other end of the active bias circuit and the other end of the feedback circuit are connected with the drain electrode of the Darlington transistor. One end of the output coupling circuit is connected with the drain electrode of the Darlington tube, and the other end is an amplifier signal output end. According to the amplifier, the active bias circuit is adopted to provide voltage for the amplifier tubes, the stability of the bias voltage during temperature change can be ensured, the noise of the amplifier can be effectively reduced by adopting a mode of separating the feedback circuit from the active bias circuit, and meanwhile,the peaking inductor is added between the Darlington tubes to further broaden the amplification gain bandwidth.

The invention discloses a charge control cabinet based on field bus, which comprises a cabinet body, a cabinet door and a base. The cabinet body comprises the following parts: a traffic lane controller which is connected with a CAN bus intelligent control device and a character superimposer; the CAN bus intelligent control device which is communicated with a traffic lane equipment and is electrically connected with a multiple control connector and a switch power source; a terminator platoon which is connected with the multiple control connector and a lightning arrester; and a bus intelligent control device which comprises a microprocessor having a watchdog, a CAN bus controller, a CAN bus dispatcher, a RS232 signal dispatcher, a first optical coupled isolator, a second optical coupled isolator, an inverter and a Darlington transistor. The invention has the advantages of dustproof, shockproof, anti-jamming, reasonable design structure, convenient installation and maintenance and safe and reliable operation, thus meeting the demands for system upgrading.

The invention discloses a switching circuit applied to contact resistance testing equipment of an electromagnetic relay. The switching circuit is characterized in that a contact changeover switching control circuit comprises a constant current source, a quadric-in-phase tristate buffer, a one-out-of-eight analog switch and a plurality of gating circuits consisting of optocouplers and Darlington transistors; the input end of the quadric-in-phase tristate buffer is connected with an IO (Input / Output) port of an MCU (Microprogrammed Control Unit), and the output end of the quadric-in-phase tristate buffer is connected with the control end of the one-out-of-eight analog switch; the input end of the one-out-of-eight analog switch is connected with a power supply, and eight output ends of the one-out-of-eight analog switch are respectively connected with the positive input end of the driving end of the optocoupler in one corresponding gating circuit; the negative end of the driving end of the optocoupler in one corresponding gating circuit is grounded; an output end collector of the one corresponding gating circuit is connected with a relay contact to be tested, and an output end emitter of the one corresponding gating circuit is connected with a control end of a Darlington transistor in one corresponding gating circuit; the input end of the Darlington transistor in one corresponding gating circuit is connected with a movable and static combination point of the electromagnetic relay to be tested; the GND end of the Darlington transistor of the corresponding gating circuit is connected with the negative end of the constant current source. According to the switching circuit disclosed by the invention, the contact resistance measurement reliability of the electromagnetic relay can be effectively improved.

The invention belongs to the technical field of semiconductor transistors and particularly relates to a high reliability Darlington transistor used for an autosyn module and a making method thereof. According to the technical proposal provided by the invention, the tube core comprises a preceding stage transistor base region and a backward stage transistor base region formed in a high resistance second epitaxial layer of a collecting zone, and the preceding stage transistor base region is internally provided with a preceding stage transistor emitting area, the backward stage transistor base region is internally provided with a backward stage transistor emitting area. The technical proposal is characterized in that the backward stage transistor base region beside the backward stage transistor emitting area is internally provided with a voltage protection ring, the surfaces of the same side of the high resistance second epitaxial layer of the collecting zone, the preceding stage transistor base region and the backward stage transistor base region, as well as the same side of the preceding stage transistor emitting area and the backward stage transistor emitting area, are provided with silicon dioxide films playing a role in protection; and a part corresponding to the preceding stage transistor base region is provided with a base aluminium layer of a base metal connecting wire above the silicon dioxide films. The product is characterized by big output current, high pressurization, stable output power, strong burn resistance, good sealing property, and the like.

The invention discloses a high voltage high power integrated operational amplifier, comprising an input stage circuit which takes junction field effect transistors as differential input pair transistors, employs a cascode structure, takes bipolar transistor active loads, preprocesses input signals, suppresses common-mode signals, amplifies different-mode signals and transmits the signals to an intermediate stage circuit; the intermediate stage circuit which amplifies output signals of the input stage circuit and transmits the signals to an output stage circuit; the output stage circuit which employs an NPN+NPN composite Darlington transistor structure for realization of current output and is connected with loads; and a bias circuit which provides static currents for the input stage circuit, the intermediate stage circuit, the output stage circuit and a protection circuit. The technical problem that in the prior art, a size is relatively large, the cost is high, a circuit structure is complex and the reliability is low due to the fact that the high voltage power simulation integrated operational amplifier is usually realized through hybrid integration or thick film integration of aplurality of chips and peripheral auxiliary circuits is solved.

The invention discloses a switching power supply with a multi-stage Darlington transistor. The switching power supply comprises a transformer (1), a switching tube (2), a controller (2) and a bleeder circuit. The switching tube (2) is the Darlington transistor formed by at least two stages of NPN triodes, and the controller (3) comprises a sampling unit (31), a first comparator (32), a pulse frequency modulation unit (33), a logic and drive unit (34), a first MOS (metal oxide semiconductor) tube (M1), a second MOS tube (M2) and a current source (35). The switching power supply has advantages that by use of the multi-stage Darlington transistor as the switching tube, base drive current of the switching tube can be greatly lowered so as to reduce power consumption of the controller, chip temperature rise is reduced, and a driving power upper limit is substantially raised; in addition, power supply capacitance can be decreased correspondingly, so that system cost is saved.

The invention provides a high-speed photoelectric relay, belonging to the technical field of electronics and relating to a photoelectric relay. The high-speed photoelectric relay is improved, aiming at the technical problem of an existing photoelectric relay with a built-in photoelectric control circuit that the photoelectric relay is turned off very slowly due to low velocity of discharge. Two or multiple stages of triodes are connected in cascade to form a Darlington transistor as a discharge channel in a control circuit; after connection in cascade, the amplification factor is increased and the circuit discharge performance is enhanced; after photovoltaic output disappears, the high-speed discharge channel enables the turn-off speed of a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) to be improved greatly; and therefore, the purpose of rapidly turning off the relay is realized.

A clamping circuit for a class AB amplifier includes a reference voltage circuit, four NPN Darlington transistors having inputs coupled to the reference voltage circuit, and outputs for providing four clamped voltages, and a split NPN Darlington transistor having an input coupled to the reference voltage circuit, and four separate outputs for providing four AC ground voltages.

The invention discloses a water level measuring device of a water tower. The device comprises a water level measuring module, a single-chip microcomputer, a wireless communication module, a display module, an alarm module and a power supply module, wherein the water level measuring module comprises nine electrodes, an eight-way Darlington transistor array and a priority encoder; the display modulecomprises a first driving circuit and a water level indicating lamp; the alarm module comprises a second driving circuit and a buzzer; and the power supply module comprises a solar cell panel, a buck-boost circuit, a lithium battery, a power supply interface and a power supply switch. The device has two power supply modes of solar energy and commercial power, and also can work under the conditionthat no outdoor power supply exists; and the device is simple in structure, easy to realize and good in anti-interference performance, has the functions of water level display, excessively low waterlevel alarm and water level data wireless transmission, and is convenient for technical personnel to remotely monitor water level information of the water tower.

The invention provides a damp-proof device for an anti-explosion frequency transformer and belongs to the technical field of power transformation or power distribution. The damp-proof device for an anti-explosion frequency transformer is used for solving the problem of electric leakage of an underground anti-explosion frequency transformer of a coal mine. According to the technical scheme, the damp-proof device for the anti-explosion frequency transformer comprises a temperature signal collection circuit, a humidity signal collection circuit, a single-chip microcomputer, a power contactor and a dehumidification circuit. The signal output end of the temperature signal collection circuit and the signal output end of the humidity signal collection circuit are connected with different input ports of the single-chip microcomputer respectively. The two control signal output ports of the single-chip microcomputer are connected with a control coil of the power contactor and the control signal input end of the dehumidification circuit respectively through a Darlington transistor array. A normally-open contact of the power contactor is connected with a power supply loop of the anti-explosion frequency transformer in series. The damp-proof device for the anti-explosion frequency transformer can effectively avoid electric leakage, caused by dampness, of the underground anti-explosion frequency transformer of the coal mine, avoid various security accents caused by electric leakage, prolong the service life of the anti-explosion frequency transformer and guarantee normal operation of coalmine production.

The invention discloses a silica-based high-current transfer ratio pair Darlington transistor and a making method thereof. The silica-based high-current transfer ratio pair Darlington transistor comprises a substrate layer, an N-type silicon epitaxial layer, a silicon dioxide passivation layer, a first-stage base region, an electrode, a first-stage emitter region, a second-stage base region, a second-stage emitter region, a collector region, a silicon nitride layer and a bottom electrode. The current transfer ratio of the silica-based high-current transfer ratio pair Darlington transistor is multiple times higher than that of a general transistor, the follow-up circuit amplifying cost is reduced, and the size of the whole transistor is reduced. According to the making method of the silica-based high-current transfer ratio pair Darlington transistor, the silica-based high-current transfer ratio pair Darlington transistor is made by using a new structure and technology, the current transfer ratio reaches 2000 or above, and the technical problems are solved that an existing phototriode is low in photoelectric response to a helium-neon laser as a light source, and the current transferratio is low.