7 results about "Common collector" patented technology

The invention provides a three-level inverter circuit. The three-level inverter circuit comprises a capacitor series network and a three-phase inverter, the capacitor series network comprises a first capacitor and a second capacitor, the first end of the first capacitor is connected with the first end of the second capacitor, and the second end of the first capacitor and the second end of the second capacitor are used for accessing bus voltage; the first input end of the three-phase inverter is connected with the second end of the first capacitor, and the second input end of the three-phase inverter is connected with the second end of the second capacitor; a switching circuit is connected between the phase output point of at least one phase bridge arm of the three-phase inverter and the first end of the first capacitor; the switch circuit comprises two power switch tubes which are connected in a common collector mode, an emitting electrode of one power switch tube of the switch circuit is connected with the first end of the first capacitor, and an emitting electrode of the other power switch tube is connected with a phase output point of a phase bridge arm of the three-phase inverter. According to the three-level inverter circuit provided by the embodiment of the invention, the loss of a switching device can be reduced.

The embodiment of the application provides a transient voltage suppression protection device, the application adopts a substrate as a common collector, and connects two base floating NPN triodes in series, so that the capacitance is halved, so that smaller capacitance is obtained; meanwhile, an ultra-low trigger voltage SCR structure is connected in parallel, so that a low-capacitance transient voltage suppression protection device is formed, and special requirements of a customer on the protection device in actual application are met.

This invention belongs to the field of semiconductor optoelectronic devices, and relates to a silicon-germanium-based NPN / PNP vertical phototransistor array structure and its manufacturing method. The structure includes a substrate layer and phototransistor units. The substrate layer is an N+ type silicon substrate, serving as the supporting substrate for the common collector region and the common conductive path. The phototransistor units include multiple NPN and PNP type phototransistor units. Both the NPN and PNP type phototransistor units include an emitter region and a silicon-based phototransistor array. 1‑x Ge x Base region and collector region, Si 1‑x Ge x The thickness of the base region is 50~300nm, 0

The invention discloses an electric fuse gating device and a manufacturing method thereof and an electric fuse circuit, the electric fuse gating device comprises a plurality of bipolar transistors, each bipolar transistor comprises an emitter region, a base region arranged around the emitter region and a collector region arranged around the base region, each emitter region and each base region are respectively used for forming an emitter electrode and a base electrode corresponding to each bipolar transistor; the plurality of bipolar transistors are arranged in parallel to form a transistor group, and in the transistor group, collector regions on adjacent sides between adjacent bipolar transistors are common collector regions; the collector regions of the other sides of each bipolar transistor except the adjacent sides are outer collector regions, and the outer collector regions are used for forming a common collector of the transistor group. The problem that an existing electric fuse circuit is too large in circuit area due to the fact that the number of storage units is increased is effectively solved.

An amplifier circuit includes an amplifier including a common drain or a common collector having variable transconductance, a power distributor connected to an output side of the amplifier, and a switch arranged in series on a bypass path, which branches from a path with which the amplifier is connected to the power distributor, bypasses the power distributor, and is joined to an output of the power distributor. Input impedance (Zin) of the power distributor has a value different from that of output impedance (Zout1) of the power distributor.

Integrated circuits including at least one bipolar transistor and corresponding methods of manufacture are disclosed. The bipolar transistor includes a common collector region including a buried semiconductor layer and an annular well. A well region is surrounded by the annular well and bounded by the buried semiconductor layer. A first base region and a second base region are formed from the well region and separated from one another by a vertical gate structure. A first emitter region is implanted in the first base region and a second emitter region is implanted in the second base region. A conductor track electrically couples the first emitter region and the second base region to configure the bipolar transistor as a Darlington device. The structure of the bipolar transistor can be co-integrated with non-volatile memory cells.

According to the low-capacitance transient suppression protection device provided by the embodiment of the invention, the highly-doped substrate and the double-layer epitaxy are adopted, the high-resistance substrate is adopted as a common collector, and two NPN triodes with floating base regions are connected in series, so that the capacitance can be halved through the series design. And meanwhile, an SCR structure with ultralow trigger voltage is connected in parallel, and the problem that the device cannot be normally and independently applied due to the one-way cut-off characteristic of a high-resistance substrate triode is solved by utilizing the punch-through characteristic of a semiconductor. On the whole, according to the structure, the capacitance of the device is halved through the two NPN structures connected in series, so that smaller capacitance is obtained, then the low-capacitance TVS is formed through the ultra-low trigger voltage SCR structures connected in parallel, and the special requirements of customers for the protection device in practical application are met.