18 results about "Broadband amplifiers" patented technology

The invention discloses an envelope extraction system and method for metal particle ultrasonic signals in a filter field circuit breaker. The system comprises an ultrasonic sensor, a broadband amplifier, an envelope detector and a data acquisition and processing unit. Firstly, an ultrasonic sensor captures a broadband ultrasonic signal generated by impact of metal particles in the filter field circuit breaker, then the broadband ultrasonic signal is transmitted to a broadband amplifier to be amplified, the amplified signal is subjected to full-wave rectification through an envelope detector, a smooth low-frequency envelope signal is obtained, the envelope signal is received by a data acquisition and processing unit, and the data acquisition and processing unit processes the envelope signal. And key parameters are extracted, and alarm is triggered or ultrasonic positioning is carried out according to needs. According to the method, redundant collection of high-frequency carrier signals is avoided, efficient real-time diagnosis of the activity intensity of the particles is achieved, and the method is particularly suitable for defect detection of the free metal particles in cavities such as a filter field circuit breaker.

The utility model discloses an X-wave band driving amplifier which is provided with three stages of amplification paths, the first two stages of amplification paths are provided with feedback loops, and the feedback loops are formed by connecting a blocking capacitor, a feedback resistor and a feedback inductor in series and can adjust gain, restrain distortion and compensate high-frequency phase shift. And each stage of amplification path provides stable direct current bias for the transistor through an active bias circuit, a gate / drain filter capacitor and a choke inductor. The radio frequency transmission circuit integrates a pi-type attenuator, a blocking capacitor and a matching inductor / capacitor to realize impedance matching and signal amplitude adjustment. The transistor is grounded in a low-impedance mode through a grounding ground hole, high-frequency interference is reduced, stable broadband gain, high P1dB and high stability are achieved through multi-stage negative feedback, power supply filtering and a matching network, efficient signal transmission and anti-interference capacity are achieved, and the high-frequency broadband amplifier is suitable for a high-frequency scene. The problems of gain fluctuation, distortion and insufficient stability of a traditional amplifier in a broadband are solved, and the amplifier has the advantages of being compact in structure and high in practicability.

The invention discloses a synchronous equalization-decoding circuit for a PAM4 receiver, and the circuit comprises a two-stage cascaded continuous time linear equalizer which is used for achieving the preliminary equalization of channel loss; the two-stage cascaded broadband amplifier is used for increasing the signal amplitude; the four current mode logic-based adders are used for inputting level superposition; the four double-tail decision devices are used for comparing differential signals and realizing decision and decoding of PAM4 signals; and the two high-speed differential sampling and holding units with bootstrapped grid voltage are used for delaying the input signal so as to realize LSB decoding of the PAM4 signal. The synchronous equalization-decoding circuit is used for realizing high energy efficiency and good output jitter performance, and the synchronous equalization-decoding circuit is expected to be applied to next-generation 200G / 400G Ethernet communication.

The invention discloses an on-chip broadband amplifier realized by adopting an active inductor, and the on-chip broadband amplifier comprises a differential input pair which is used for converting an input voltage signal into a current signal; the active inductor is used for forming equivalent inductive impedance, converting a current signal into an output voltage signal and amplifying an input voltage signal; and the tail current source is used for providing current bias for the on-chip broadband amplifier and adjusting the swing range of the output voltage signal and the overall gain value of the on-chip broadband amplifier. According to the on-chip broadband amplifier, the impedance characteristic similar to that of a passive inductor is achieved by forming a negative feedback loop in the chip, the area needed by the on-chip inductor is greatly saved, the integration level of the circuit is improved while the bandwidth of the on-chip broadband amplifier is guaranteed, and the on-chip broadband amplifier can be applied to design of a high-speed interface circuit.

Circuits, semiconductor devices, and systems are provided. An illustrative circuit includes a first blocking capacitor coupled to an input of an amplifier and a second blocking capacitor coupled to the input of the amplifier, where the first blocking capacitor and the second blocking capacitor provide at least some Direct Current (DC) blocking to the amplifier. The circuit further includes one or more transistors that operate as an amplifying element for the amplifier and a biasing and crossing control circuit to provide bias control and offset compensation for the amplifier, where the biasing and crossing control circuit further provides a crossing control for the amplifier.

An integrated circuit comprises a first transistor and a second transistor. A first current path terminal of the second transistor is coupled to a reference voltage terminal. A first current path terminal of the first transistor is coupled to a second current path terminal of the second transistor. A second current path terminal of the first transistor is coupled to a first differential output terminal. A control terminal of the second transistor is coupled to a first differential input terminal. The integrated circuit includes a first resistor with a first terminal and a second terminal. The first terminal is coupled to the bulk terminal of the first transistor, and the second terminal is coupled to the reference voltage terminal. The first resistor is located in a dielectric layer across the first and second transistors.

A broadband signal power amplifier includes a signal input, a signal-level meter (SLM), a microcontroller communicatively coupled to the SLM, a signal output, and a plurality of stages between the signal input and output, wherein each stage includes a variable attenuator module, a variable equalizer module, and an amplifier. The SLM is configured to measure the total composite power (TCP) and the per-channel signal levels (PCLs) of the signal between the first input and first stage, and between the last stage and the output, and provide the measurements to the microcontroller. The microcontroller is configured to adjust the attenuation and equalization of the variable attenuator module and variable equalizer module of each stage, such that the signal remains within a specified carrier to composite noise (CCN) range between the input and the output, and such that the signal has a desired TCP, PCLs, and tilt when passing through the output.

The invention relates to a high-frequency generator system (12) for plasma excitation for a plasma process, comprising a signal generator unit (18) configured to generate at least three high-frequency signals with different frequencies. The high-frequency generator system (12) includes a broadband amplifier stage (24) configured to amplify the high-frequency signals in order to output amplified high-frequency signals at an amplifier stage output (26) of the amplifier stage (24). The high-frequency generator system (12) has a matching network (28) configured to set a predetermined impedance for the amplifier stage output (26) of the amplifier stage (24), wherein the impedance between the amplifier stage output (26) and the matching network (28) is not equal to 50 ohms. The high-frequency generator system (12) has a plasma process impedance sensing unit (34) configured to detect a complex-valued impedance (Z). P) of the plasma process, wherein a control unit (42) is set up, the signal generator unit (18), the amplifier stage (24) and / or the matching network (28) is set up based on the detected complex-valued impedance (Z). P ) of the plasma process. Furthermore, a plasma generation plant (10) and a method for exciting a plasma for a plasma process are described.

The utility model provides a kind of C-band low-voltage and high linearity's broadband amplifier, including two parallel cascode circuits, two active bias circuits, power distribution circuit and power synthesis circuit;Special matching structure is used in circuit, while completing impedance matching, non-target harmonic signal is inhibited, and linearity is improved.The core chip provided by the utility model is high in linearity, suitable in bandwidth, low in power supply voltage, and can be widely applied to radar, communication, instrument application program and passive or active imaging.

Systems and methods that integrate a directional coupling function with directivity that does not have output loss are disclosed. For example, a power amplifier circuit arrangement includes an input terminal to receive an input signal; amplifier circuitry including a first amplifier stage, a second amplifier stage, and a virtual ground node, where an input of the first amplifier stage is coupled to the input terminal, an output of the first amplifier stage is coupled to an input of the second amplifier stage via the virtual ground node, and an output of the second amplifier stage is coupled to the input of the first amplifier stage via feedback circuitry; an output terminal coupled to the output of the second amplifier stage, the output terminal to output an amplified signal; and a directional coupler terminal coupled to the virtual ground node.

The utility model discloses a 0.38GHz-18GHz broadband low harmonic amplifier relates to the amplifier field, the amplifier includes signal input, signal input connects the pre band -stop filter circuit, primary amplification circuit, interstage broadband matching network, final stage amplification circuit and frequency division section harmonic suppression module in proper order, the output of frequency division section harmonic suppression module is connected signal output of the amplifier, the amplifier still includes dynamic bias control circuit, dynamic bias control circuit is connected with the bias node of primary amplification circuit and the bias node of final stage amplification circuit respectively. The utility model discloses through dynamic bias control circuit real -time regulation primary and final stage amplification circuit's bias voltage, combines frequency division section harmonic suppression module adaptive switching filter subunit, accurate suppression full -band harmonic, solved the problem that traditional broadband amplifier harmonic suppression bandwidth is insufficient, the big problem of insertion loss.

Provided is an on-chip inductor for realizing broadband and a flat frequency response. The on-chip inductor includes an inductor coil comprising a first sub-coil and a second sub-coil having mutual inductance, wherein the first sub-coil and the second sub-coil form a permanent electrical connection in series and the second sub-coil is placed inside the first sub-coil on the chip. Furthermore, the on-chip inductor includes terminals connected to the first sub-coil and a resistor connected in parallel to the second sub-coil.

This application belongs to the field of high-speed signal transceivers, specifically disclosing an ultra-high frequency peaking method and system for broadband front-ends, wherein a broadband amplification network and n Parallel peaking networks; the output of the power distribution network is connected to the broadband amplification network and... n Input connection of the cascaded peaking network; broadband amplification network and n The outputs of all peaking networks are connected to the inputs of the power combining network. When the peak frequencies of all peaking networks are the same, ultra-high frequency peaking is performed on the input signal. When the peak frequencies of the peaking networks are different, and the peaking network gain is higher than the preset gain value, the high-frequency loss of the input signal is compensated while ultra-high frequency peaking is performed on the input signal. When the peak frequencies of the peaking networks are different, and the peaking network gain is lower than the preset gain value, the high-frequency loss of the input signal is compensated, and the bandwidth of the input signal is expanded. This can both expand the bandwidth of the broadband amplifier circuit and compensate for the high-frequency loss of the input signal.

The invention belongs to the field of high-speed signal transceivers, and particularly discloses an ultrahigh-frequency peaking method and system for a broadband front end, and the method is characterized in that a broadband amplification network is connected with an n-stage peaking network in parallel; the output end of the power distribution network is connected with the input ends of the broadband amplification network and the n-stage peaking network; the output ends of the broadband amplification network and the n-stage peaking network are connected with the input end of the power synthesis network; when the peak frequencies of the peaking networks are the same, ultrahigh frequency peaking is carried out on the input signals; when the peak frequencies of the peaking network are different and the gain of the peaking network is higher than a preset gain value, compensating the high-frequency loss of the input signal and performing ultrahigh-frequency peaking on the input signal; and when the peak frequencies of the peaking network are different and the gain of the peaking network is lower than a preset gain value, compensating the high-frequency loss of the input signal, and expanding the bandwidth of the input signal. The bandwidth of the broadband amplification circuit can be expanded, and the high-frequency loss of the input signal can be compensated.

A multi-stage amplifier includes a first stage and a second stage. The first stage includes a first common-source amplifier, a first inductive load network including a first load resistor and a first load inductor connected in series, and a first inter-stage inductor. The first inductive load network includes a first source network for receiving a first signal and outputting a first load signal. The first inter-stage inductor is configured to couple the first load signal to a second signal. The second stage includes a second common-source amplifier, a second inductive load network including a second load resistor and a second load inductor connected in series, and a second inter-stage inductor. The second inductive load network includes a second source network for receiving the second signal and outputting a second load signal. The second inter-stage inductor is configured to couple the second load signal to a third signal. The first load inductor and the second load inductor are arranged to enhance inter-stage inductive coupling.

The invention discloses a broadband high-harmonic suppression amplifier circuit which comprises a radio frequency input port, a radio frequency input balun, a first amplification module, a second amplification module, a first bias unit, a second bias unit, a radio frequency output balun and a radio frequency output port. The radio frequency input balun is connected with the radio frequency input port and performs differential processing on a radio frequency input signal; the input end of the first amplification module is connected with the radio frequency input balun and is used for carrying out first-stage amplification on a radio frequency input signal; the input end of the second amplification module is connected with the output end of the first amplification module, and second-stage amplification is carried out on the first-stage output signal; the radio frequency output balun is connected with the output end of the second amplification module and is used for carrying out differential synthesis on a second-stage output signal; the radio frequency output port is connected with the radio frequency output balun and outputs a radio frequency output signal; the first and second bias units supply power to the first and second amplification modules. According to the invention, broadband and high harmonic suppression can be realized at a high frequency band, and the problem of insufficient harmonic suppression capability of a broadband amplifier circuit is solved.

The invention discloses a Darlington broadband amplifier capable of improving output power. The Darlington broadband amplifier comprises an amplifying circuit, a self-adaptive biasing circuit, an input end blocking capacitor, an output end blocking capacitor and a choke inductor. The self-adaptive bias circuit adopts an active self-adaptive bias structure, and the amplifying circuit adopts an improved Darlington cascode topological structure and is combined with the active self-adaptive bias structure; the power supply VDD supplies power through the choke inductor, and a radio frequency signal enters the input end blocking capacitor from the signal input end RFin, passes through the self-adaptive biasing circuit and the amplifying circuit, and finally passes through the output end blocking capacitor to the signal output end RFout to be output. The characteristics of high gain and low input impedance of Darlington and the advantages of wide frequency band and high output impedance of cascode are fused, topological improvement is provided for a traditional Darlington structure, the output power and efficiency of an amplifier of a traditional structure are improved, and then the design performance of the amplifier is improved.