Polysilicon plug bipolar transistor for phase change memory

Abstract

Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar junction transistors are arranged in a common collector configuration and include an emitter comprising doped polysilicon having a first conductivity type, the emitter contacting a corresponding word line in a plurality of word lines to define a pn junction. The bipolar junction transistors include a portion of the corresponding word line underlying the emitter acting as a base, and a collector comprising a portion of the single-crystalline substrate underlying the base.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is related to co-pending U.S. patent application Ser. No. ______ entitled “Polysilicon Plug Bipolar Transistor with Self-Aligned Memory Element”, filed on ______ (Attorney Docket No. MXIC 1859-1).PARTIES TO A JOINT RESEARCH AGREEMENT

[0002] International Business Machines Corporation, a New York corporation, and Macronix International Corporation, Ltd., a Taiwan corporation, are parties to a Joint Research Agreement.BACKGROUND OF THE INVENTION

[0003] 1. Field of the Invention

[0004] The present invention relates to high density memory devices based on phase change based memory materials, including chalcogenide based materials and on other programmable resistive materials, and methods for manufacturing such devices.

[0005] 2. Description of Related Art

[0006] Phase change based memory materials, like chalcogenide based materials and similar materials, can be caused to change phase between an amorphous state and a crystalline state b...

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