Two-dimensional synthesis distribution type high-power linear broadband power amplifier

Abstract

The invention discloses a two-dimensional synthesis distribution type high-power linear broadband power amplifier. The power amplifier comprises a broadband input driving power division amplificationnetwork, a power supply bias network, a final-stage PMOS distribution amplification network, a final-stage NMOS distribution amplification network and a final-stage artificial transmission line. The core architecture of the power amplifier adopts the characteristics of high power and high gain of a high-gain three-pile stacked adaptive amplification network in a microwave band; and meanwhile, theultra-wideband frequency response characteristic and the simplified series voltage division structure of the two-dimensional synthesis distributed amplifier structure are utilized, so that the whole power amplifier obtains good wideband, high gain, high efficiency and high power output capability, and a power supply network is simple.

Description

technical field [0001] The invention relates to field effect transistor radio frequency power amplifiers and the field of integrated circuits, in particular to a two-dimensional synthetic distribution high-power linear broadband power amplifier applied to a transmitting module at the end of a radio frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip c...

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Problems solved by technology

[0004] (1) Limited broadband high-gain amplification capability: Traditional single transistors are affected by the gain-bandwidth product, and gain must be sacrificed to obtain ultra-wideband amplification capability. Therefore, the broadband high-gain amplification capability is severely limited

[0005] (2) Limited broadband high power amplification capability: The characteristic frequency of transistors in semiconductor processes is getting higher and higher, which leads to low breakdown voltage and limits the power capacity of a single transistor

[0007] ① In the traditional distributed power amplifier, the core amplifier circuit is realized by multiple single transistors in a distributed amplification arrangement. Since the single transistor is affected by parasitic parameters, its power gain will be significantly reduced as the operating frequency increases. , At the same time, the power characteristics will be significantly deteriorated, so in order to obtain an ultra-wideband flat amplification structure, it is necessary to sacrifice low-frequency gain to balance high-frequency loss, resulting in very low ultra-wideband gain of traditional distributed amplifiers;

[0008] ②In order to improve the amplifier gain and improve the isolation, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot gain a significant deterioration with frequency, nor can it realize the Cascode dual-transistor. Optimum impedance matching, which reduces output power characteristics

[0009] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output is difficult under ultra-wideband; there are many limitations in the traditional single transistor structure or the distributed amplification structure of Cascode transistors

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