A 5g communication anti-mismatch broadband low noise amplifier

Abstract

The invention discloses a 5G communication anti-mismatch broadband low-noise amplifier, which includes two parallel-connected high-linearity low-noise amplification networks, an active bias network, a passive bias network and an RC negative feedback network, an input 45° shift phase network and output 45° phase shift network. The invention adopts two transistors of different sizes to form a series stacking structure to realize a low-noise amplification network, and combines an RC negative feedback network to realize ultra-wideband low noise, impedance matching and high linearity; at the same time, a balanced synthesis structure is used to design the overall circuit. The output is added to the phase-shifting network, which improves the amplifier's tolerance to load mismatch and insensitivity to load changes, and improves the linearity index of the amplifier in non-50-ohm systems, making the entire low-noise amplifier not only in 50-ohm systems It has good broadband, linearity, low power consumption, and low noise amplification capabilities, and at the same time, it still maintains high OIP3 performance in non-50 ohm systems.

Description

technical field [0001] The invention belongs to the technical field of effect transistor radio-frequency low-noise amplifiers and integrated circuits, and in particular relates to the design of a 5G communication anti-mismatch broadband low-noise amplifier. Background technique [0002] With the rapid development of the 5G civil communication market, RF front-end receivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs ultra-wideband, high-gain, high-linearity, low-noise RF and microwave low-noise amplifier chips. [0003] At the same time, with the continuous expansion of communication frequency bands, the number of bands (bands) used in communication systems continues to increase, and multiple high-performance filters need to be switched between each band. At this time, the input and output impedance of the amplifier in certain frequency bands is not 50 ohms. In this application s...

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Problems solved by technology

[0005] (1) Low power consumption, high linearity, high gain, and low noise amplification indicators are mutually restricted: driven by the market, the standby power consumption of the RF front-end receiver needs to be reduced as much as possible to achieve energy-saving functions, but the traditional common source ( or common emitter) low-noise amplifier design, the best noise bias point to achieve the best noise, and the best bias point to meet the gain and linearity often cannot achieve the lowest power consumption of the amplifier, so the two indicators can not be very well compatible

[0006] (2) High linearity low noise amplifier can only maintain high linearity in 50 ohm system

[0008] (1) The current multiplexing structure requires the use of feed inductance and large capacitance to achieve static bias multiplexing of two common source (or common emitter) amplifiers. The self-resonant frequency of this large inductance and large capacitance feed structure is low , when realizing ultra-wideband amplification, it is possible that the self-resonant frequency point will fall into the amplification frequency band, thereby deteriorating the radio frequency characteristics; at the same time, large inductance and capacitance often occupy a large chip area, thereby increasing the cost of the chip

[0009] (2) Conventional high-linearity low-noise amplifiers are sensitive to input and output impedances. When the input and output impedances change, the performance of OIP3 (output third-order intercept point) will deteriorate

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