Power amplifier having distributed three stacking structure and considering miller effect

Abstract

The invention discloses a power amplifier having a distributed three stacking structure and considering miller effect. The power amplifier comprises a distributed three stacking amplification network, a grid artificial transmission line considering the miller effect, a drain artificial transmission line considering the miller effect, a first bias voltage and a second bias voltage. The core architecture of the power amplifier adopts the distributed three stacking amplification network, the distributed three stacking amplification network is composed of at least three transistor stacking structures; meanwhile, influence of the miller effect of the three transistor stacking structures on equivalent capacitance of the artificial transmission lines is considered, circuit design accuracy is improved, and difficulty in later-stage circuit debugging is reduced, so that the whole power amplifier obtains good broadband power output capability and power gain capability, the low breakdown voltage characteristic of an integrated circuit technology is avoided, and circuit stability and reliability are improved.

Description

technical field [0001] The invention relates to field effect transistor radio frequency power amplifiers and the field of integrated circuits, in particular to a high-efficiency, high-output-power, high-gain distributed power amplifier applied to a transmitting module at the end of an ultra-wideband transceiver. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communication, wireless local area network (WLAN) and other military electronic warfare and communication, and civilian communication markets, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have ultra-wideband, high output power, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. ...

AI Technical Summary

Problems solved by technology

[0004] (1) High-power high-efficiency amplification capability is limited: the gate length of transistors in semiconductor processes is getting shorter and shorter, resulting in low breakdown voltage and high knee point voltage, which limits the power capacity of a single transistor

In order to obtain high power capability, multi-channel transistor power synthesis is often required, but the efficiency of the power amplifier is relatively low due to the energy loss of the multi-channel synthesis network, so the high power and high efficiency capabilities are poor

[0005] (2) Ultra-broadband high power amplification capability is limited: in order to meet the high power index, multiple transistor power synthesis is required, but the load impedance of multi-channel synthesis is greatly reduced, resulting in a very high impedance conversion ratio; in high impedance conversion ratio Realizing broadband characteristics is a great challenge

[0007] ①In the traditional distributed power amplifier, the core amplification circuit is realized by a distributed amplification arrangement of multiple single field-effect transistor FETs (field-effect transistors). On the low side, the isolation is poor, which also leads to the deterioration of the reflection characteristics, thereby reducing the synthesis efficiency;

[0008] ②In the design of traditional distributed amplifiers, for the sake of simple analysis, the influence of Miller capacitance on the circuit is often ignored, resulting in a large amount of work for circuit debugging after the circuit structure design is completed, which consumes a lot of manpower and material resources, and reduces the efficiency of circuit design. ;

[0009] ③In addition, in order to reduce the influence of the Miller effect on the circuit, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot improve the power gain and other indicators, nor can it realize the Cascode dual-transistor. The best impedance matching, which reduces the output power characteristics

[0010] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output and high power gain under ultra-wideband are difficult; there are many limitations in the traditional single transistor structure or the distributed amplification structure of Cascode transistors

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