Ultra-wideband amplifier based on Darlington stacked tubes

Abstract

The invention discloses an ultra-wideband amplifier based on Darlington stacked tubes. The ultra-wideband amplifier comprises a second-order matrix input distribution network, a second-order matrix interstage balance network, a second-order matrix output synthesis network, a first Darlington stacked tube, a second Darlington stacked tube, a third Darlington stacked tube, a fourth Darlington stacked tube and a feed network connected with the second-order matrix interstage balance network and the second-order matrix output synthesis network. A core framework adopts a matrix amplification networkconsisting of the first to fourth Darlington stacked tubes, and the influence of the Darlington stacked tubes on artificial transmission lines in the matrix amplification network is considered, so that the accuracy of circuit design is greatly improved, the later debugging difficulty of the circuit is reduced, and the whole power amplifier has a good broadband high-gain and high-power output capability.

Description

technical field [0001] The invention relates to the fields of heterojunction bipolar transistor radio frequency power amplifiers and integrated circuits, in particular to an ultra-wideband amplifier based on a Darlington stacked tube applied to a transmitting module at the end of an ultra-wideband transceiver. Background technique [0002] With the rapid development of spread spectrum technology, software radio, ultra-wideband communication, wireless local area network (WLAN), etc., RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have ultra-wideband, high output power, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and impleme...

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Problems solved by technology

[0004] (1) Limited broadband high-gain amplification capability: Traditional single transistors are affected by the gain-bandwidth product, and gain must be sacrificed to obtain ultra-wideband amplification capability. Therefore, the broadband high-gain amplification capability is severely limited

[0005] (2) Limited broadband high power amplification capability: The characteristic frequency of transistors in semiconductor processes is getting higher and higher, which leads to low breakdown voltage and limits the power capacity of a single transistor

[0007] ① In the traditional distributed power amplifier, the core amplifier circuit is realized by multiple single transistors in a distributed amplification arrangement. Since the single transistor is affected by parasitic parameters, its power gain will be significantly reduced as the operating frequency increases. , At the same time, the power characteristics will be significantly deteriorated, so in order to obtain an ultra-wideband flat amplification structure, it is necessary to sacrifice low-frequency gain to balance high-frequency loss, resulting in very low ultra-wideband gain of traditional distributed amplifiers;

[0008] ②In order to improve the amplifier gain and improve the isolation, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot gain a significant deterioration with frequency, nor can it realize the Cascode dual-transistor. Optimum impedance matching, which reduces output power characteristics

[0009] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output is difficult under ultra-wideband; there are many limitations in the traditional single transistor structure or the distributed amplification structure of Cascode transistors

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