Ultra-wideband high-power amplifier

Abstract

The invention discloses an ultra-wideband high-power amplifier. The amplifier comprises an input artificial transmission line matching network, an input absorption load, a high-power low-frequency amplification network, a first medium-power medium-frequency amplification network, a second medium-power medium-frequency amplification network, a high-power high-frequency amplification network, an output artificial transmission line matching network and an output absorption load. According to the invention, the advantages of a single transistor structure amplifier and a distributed amplifier are combined, the ultra-wideband high-power amplifier has the advantages of being high in power output capacity, high in power gain, good in input and output matching characteristics, low in cost and the like under the ultra-wideband condition, meanwhile, the low breakdown voltage characteristic needing to face the integrated circuit technology in the design of the high-power power amplifier is avoided, and the stability and reliability of the circuit are improved.

Description

technical field [0001] The invention belongs to the technical field of field-effect transistor radio frequency power amplifiers and integrated circuits, and in particular relates to the design of an ultra-wideband high-power amplifier. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communication, wireless local area network and other military electronic countermeasures and communication, and civilian communication markets, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have ultra-wideband, high output power, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and impl...

AI Technical Summary

Problems solved by technology

[0004] (1) High-power and high-efficiency amplification capability is limited: the gate length of transistors in semiconductor processes is getting shorter and shorter, resulting in low breakdown voltage and high knee point voltage, which limits the power capacity of a single transistor

In order to obtain high power capability, multi-channel transistor power synthesis is often required, but the efficiency of the power amplifier is relatively low due to the energy loss of the multi-channel synthesis network, so the high power and high efficiency capabilities are poor

[0005] (2) Ultra-broadband high-power amplification capability is limited: in order to meet the high power index, multiple transistor power synthesis is required, but the load impedance of multi-channel synthesis is greatly reduced, resulting in a high impedance transformation ratio; in high impedance transformation ratio Realizing broadband characteristics is a great challenge

[0007] (1) In the traditional distributed power amplifier, the core amplification circuit is realized by a distributed amplification arrangement of multiple single field effect transistors. Due to the low power gain, low optimal impedance and isolation of single field effect transistors Poor and thus also lead to deterioration of reflective properties, thereby reducing synthesis efficiency;

[0008] (2) In order to simplify the analysis in the design of traditional distributed amplifiers, the influence of Miller capacitance on the circuit is often ignor

Images