The application provides an ultra-
wideband high-power
amplifier and
transmitter, wherein the power
amplifier comprises a
signal input end for receiving an input
signal, an input matching network connected with the
signal input end at one end and with a gate of a GaN power
amplifier chip at the other end, for matching the impedance between the gate of the GaN power amplifier
chip and the signal input end, an output matching network connected with a drain of the GaN power amplifier
chip at one end and with a signal output end at the other end, for matching the impedance within an ultra-
wideband, an input bias network comprising a
filter capacitor, connected with the gate of the GaN power amplifier chip at one end and with an external gate power supply at the other end, for filtering and bypassing the gate power supply, and an output bias network comprising a
filter capacitor, connected with the drain of the GaN power amplifier chip at one end and with an external drain power supply at the other end, for filtering and bypassing the drain power supply. The frequency of the power amplifier can cover 0.2G-2GHz.