30results about How to "Enhanced spontaneous emission" patented technology

An in-line, distributed optical fiber filter comprises a core region with a raised refractive index (with respect to the surrounding cladding material) so as to allow for total internal reflection (TIR) of the desired transmission wavelength(s). One or more raised index features are formed within the cladding region and are configured so as to result in mode mixing between the cladding mode and core mode at determined wavelength(s) to be removed by filtering. The parameters associated with determining the proper core specifications and cladding specifications can be separately determined to provide for enhanced performance in terms of both filtering unwanted signals and propagation of desired communication signals.

An in-line, distributed optical fiber filter comprises a core region with a raised refractive index (with respect to the surrounding cladding material) so as to allow for total internal reflection (TIR) of the desired transmission wavelength(s). One or more raised index features are formed within the cladding region and are configured so as to result in mode mixing between the cladding mode and core mode at determined wavelength(s) to be removed by filtering. The parameters associated with determining the proper core specifications and cladding specifications can be separately determined to provide for enhanced performance in terms of both filtering unwanted signals and propagation of desired communication signals.

A method of operating a fiber amplifier characterized by a spectral gain curve includes providing an input signal at a signal wavelength. The signal wavelength lies within an in-band portion of the spectral gain curve extending from a first in-band wavelength to a second in-band wavelength, the in-band portion being characterized by a first amplitude range. The method also includes providing pump radiation at a pump wavelength. The pump wavelength is less than the signal wavelength. The method further includes coupling the pump radiation to the fiber amplifier and amplifying the input signal to generate an output signal. All portions of the spectral gain curve at wavelengths less than the first in-band wavelength and greater than the pump wavelength are characterized by a second amplitude less than or equal to 10 dB greater than the first amplitude range.

A laser gain medium having a layered coating on at least certain surfaces of the laser gain medium. The layered coating having a reflective inner material and an absorptive scattering outside material.

A method of operating a fiber amplifier characterized by a spectral gain curve includes providing an input signal at a signal wavelength. The signal wavelength lies within an in-band portion of the spectral gain curve extending from a first in-band wavelength to a second in-band wavelength, the in-band portion being characterized by a first amplitude range. The method also includes providing pump radiation at a pump wavelength. The pump wavelength is less than the signal wavelength. The method further includes coupling the pump radiation to the fiber amplifier and amplifying the input signal to generate an output signal. All portions of the spectral gain curve at wavelengths less than the first in-band wavelength and greater than the pump wavelength are characterized by a second amplitude less than or equal to 10 dB greater than the first amplitude range.

A MOPA laser system that includes a seed laser configured to output pulsed laser light, an amplifier configured to receive and amplify the pulsed laser light emitted by the seed laser; and a pump laser configured to deliver a pump laser beam to both the seed laser and the amplifier.

A laser utilizes a cavity design which allows the stable generation of high peak power pulses from mode-locked multi-mode fiber lasers, greatly extending the peak power limits of conventional mode-locked single-mode fiber lasers. Mode-locking may be induced by insertion of a saturable absorber into the cavity and by inserting one or more mode-filters to ensure the oscillation of the fundamental mode in the multi-mode fiber. The probability of damage of the absorber may be minimized by the insertion of an additional semiconductor optical power limiter into the cavity.

A luminescent element including nitride includes a luminescent film and a metal layer with a metal microstructure formed on a surface of the luminescent film; wherein the luminescent film has a chemical composition: Ga1-xAlxN:yRe, wherein Re represents the rare earth element, 0≦x≦1, 0<y≦0.2. A preparation method of a luminescent element including nitride and a luminescence method are also provided. The metal layer is formed on the surface of the luminescent film, and the luminescent element including nitride has simple structure, good luminescence homogeneity, high luminescence efficiency, and good luminescence stability.

A luminescent element includes a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; wherein the luminescent substrate has a luminescent material with a chemical composition: Y2O3:Eu. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

The invention discloses a zinc oxide light-emitting component and a preparation method thereof. The zinc oxide light-emitting component comprises a zinc oxide film and is characterized by also comprising a metal layer located on the surface of the zinc oxide film, wherein the metal layer has a metal micro-nano structure. The preparation method comprises the following steps: forming the metal layer on the surface of the zinc oxide film, and then carrying out annealing treatment on the zinc oxide film and the metal layer in a vacuum environment to enable the metal layer to form the metal micro-nano structure. The preparation method has the characteristics of simple process, low cost and high practicability and the like, and the prepared zinc oxide light-emitting component has very high ultraviolet luminous intensity under the excitation of cathode rays.

The invention discloses an yttria light-emitting element and a preparation method thereof. The yttria light-emitting element comprises a Y2O3:Eu light-emitting film, a metal layer positioned on the surface of the Y2O3:Eu light-emitting film, wherein the metal layer has a metal micro-nano structure. The preparation method comprises the following steps: forming the metal layer on the surface of theY2O3:Eu light-emitting film; carrying out an annealing process for the Y2O3:Eu light-emitting film and the metal layer in a vacuum environment to enable the metal layer to form the metal micro-nano structure. The yttria light-emitting element provided by the present invention has high light-emitting intensity; the preparation method has characteristics of simple process, short preparation period and the like.

A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Zn2SiO4:Mn. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

An optical fiber laser structure and system are disclosed. The fiber laser structure includes a core, an inner cladding, and an outer cladding. The core has a first and second end and includes a combination of ytterbium and erbium as a first active gain component. The inner cladding, having a length defined between the first and second ends, surrounds the core. The inner cladding includes neodymium as a second active gain component that is different from the first active gain component. The system includes a pumping source coupled to the inner cladding to provide energy to the neodymium in the inner cladding. Upon being pumped, the neodymium achieves amplified spontaneous emission in the inner cladding along the length between the first and second ends. As a result, energy is efficiently transferred from the neodymium to the combination of the ytterbium and erbium in the core thereby providing laser activity at an eye-safe laser wavelength of 1535 nanometers.

An optical fiber laser structure and system are disclosed. The fiber laser structure includes a core, an inner cladding, and an outer cladding. The core has a first and second end and includes a combination of ytterbium and erbium as a first active gain component. The inner cladding, having a length defined between the first and second ends, surrounds the core. The inner cladding includes neodymium as a second active gain component that is different from the first active gain component. The system includes a pumping source coupled to the inner cladding to provide energy to the neodymium in the inner cladding. Upon being pumped, the neodymium achieves amplified spontaneous emission in the inner cladding along the length between the first and second ends. As a result, energy is efficiently transferred from the neodymium to the combination of the ytterbium and erbium in the core thereby providing laser activity at an eye-safe laser wavelength of 1535 nanometers.

A luminescent element including nitride includes a luminescent film and a metal layer with a metal microstructure formed on a surface of the luminescent film; wherein the luminescent film has a chemical composition: Ga1-xAlxN:yRe, wherein Re represents the rare earth element, 0≦̸x≦̸1, 0<y≦̸0.2. A preparation method of a luminescent element including nitride and a luminescence method are also provided. The metal layer is formed on the surface of the luminescent film, and the luminescent element including nitride has simple structure, good luminescence homogeneity, high luminescence efficiency, and good luminescence stability.

A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided.

A light emission apparatus (10) and a manufacturing method thereof are provided. The light emission apparatus includes a light emission base body (13) and a metal layer (14) with metal microstructure. The metal layer is set on the surface of the light emission base body. The material of light emission base body is transparent ceramic Y3Al5O12:Tb. By setting a metal layer with metal microstructure on the light emission base body, the interface between the metal layer and the light emission base body could form a surface plasmon under the cathode ray (16). The spontaneous emission of the transparent ceramic and the emission efficiency of the light emission base body could be enhanced by the effect of surface plasmon.

The invention provides an epitaxial structure of a red and yellow GaAs diode and a preparation method of the epitaxial structure. The epitaxial structure comprises a substrate, and a Bragg reflector, an N-type limiting layer, a multi-quantum well layer, a P-type limiting layer, a P-type covering layer and a current expansion layer which are sequentially grown upwards on the substrate, wherein the Bragg reflector is of a periodic structure, Si doping is carried out on the Bragg reflector, and the Si doping concentration in the Bragg reflector is gradually increased along with increasing of the growth period of the Bragg reflector structure, so that the Bragg reflector has the function of an N-type covering layer. According to the invention, the epitaxial structure and the epitaxial processing technology can be simplified, the production cost is lower, the Bragg reflector integrates the reflection effect of the Bragg reflector structure and the composite light-emitting electron providing effect of the N-Cladding structure, and the light-emitting brightness of the diode can be improved.

A light emitting device and a manufacturing method thereof are provided. The light emitting device (10) comprises a light emitting substrate (13) and a metal layer (14) having irregularly arranged nano-particles structure formed on a surface of the light emitting substrate (13), wherein the material of the light emitting substrate (13) is a transparent ceramic (13) comprised of Y2O3:Eu. By disposing the metal layer having the irregularly arranged nano-particles structure on the light emitting substrate, surface Plasmon is formed on the interface between the cathode ray and the light emitting substrate, to greatly increase the light efficiency.

A luminescent element includes a luminescent glass and a metal layer with a metal microstructure formed on a surface of the luminescent glass; wherein the luminescent glass has a chemical composition: bY2O3.cAl2O3.dB2O3.yTb2O3, wherein bY2O3.cAl2O3.dB2O3.yTb2O3. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Y3AlxGa5-xO12:Tb, and 0≦x≦5. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

The invention discloses a zinc oxide light-emitting component and a preparation method thereof. The zinc oxide light-emitting component comprises a zinc oxide film and is characterized by also comprising a metal layer located on the surface of the zinc oxide film, wherein the metal layer has a metal micro-nano structure. The preparation method comprises the following steps: forming the metal layer on the surface of the zinc oxide film, and then carrying out annealing treatment on the zinc oxide film and the metal layer in a vacuum environment to enable the metal layer to form the metal micro-nano structure. The preparation method has the characteristics of simple process, low cost and high practicability and the like, and the prepared zinc oxide light-emitting component has very high ultraviolet luminous intensity under the excitation of cathode rays.

A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Zn2SiO4:Mn. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

A luminescent element includes a luminescent glass and a metal layer with a metal microstructure formed on a surface of the luminescent glass; wherein the luminescent glass has a chemical composition: aR2O.bZnO.cSiO2.nMnO2, wherein R represents the alkali metal element, a, b, c, and n are, by mole parts, 9.5˜40, 8˜40, 35˜70, and 0.01˜1, respectively. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

The invention discloses an yttria light-emitting element and a preparation method thereof. The yttria light-emitting element comprises a Y2O3:Eu light-emitting film, a metal layer positioned on the surface of the Y2O3:Eu light-emitting film, wherein the metal layer has a metal micro-nano structure. The preparation method comprises the following steps: forming the metal layer on the surface of theY2O3:Eu light-emitting film; carrying out an annealing process for the Y2O3:Eu light-emitting film and the metal layer in a vacuum environment to enable the metal layer to form the metal micro-nano structure. The yttria light-emitting element provided by the present invention has high light-emitting intensity; the preparation method has characteristics of simple process, short preparation period and the like.

An electroluminescence device (1) realizes high light emission efficiency, high durability, and high extraction efficiency. The device includes electrodes (11, 17); a plurality of layers (12 through 16) that are deposited between the electrodes (11, 17); and a light emitting region (14) between the plurality of layers (12 through 16). The light emitting region (14) emits light by application of an electric field between the electrodes (11, 17). The thickness and the refractive index of each of the plurality of layers (12 through 16) satisfy a resonance condition in the electroluminescence device (1) that makes a region in which the intensity of the electric field of a standing wave (19) by the light emitted from the light emitting region (14) is the highest substantially coincide with the light emitting region (14). A metal member (20) that induces plasmon resonance on the surface thereof by the emitted light is arranged in the vicinity of the light emitting region (14).

A luminescent element includes a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; wherein the luminescent substrate has a luminescent material with a chemical composition: Y2O3:Eu. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

A luminescent element includes a luminescent glass and a metal layer with a metal microstructure formed on a surface of the luminescent glass; wherein the luminescent glass has a chemical composition: aR2O.bZnO.cSiO2.nMnO2, wherein R represents the alkali metal element, a, b, c, and n are, by mole parts, 9.5˜40, 8˜40, 35˜70, and 0.01˜1, respectively. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.

A light emitting device and a manufacturing method thereof are provided. The light emitting device (10) comprises a light emitting substrate (13) and a metal layer (14) having irregularly arranged nano-particles structure formed on a surface of the light emitting substrate (13), wherein the material of the light emitting substrate (13) is a transparent ceramic (13) comprised of Y 2 O 3 :Eu. By disposing the metal layer having the irregularly arranged nano-particles structure on the light emitting substrate, surface Plasmon is formed on the interface between the cathode ray and the light emitting substrate, to greatly increase the light efficiency.

A luminescent element is disclosed including: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; wherein the luminescent substrate comprises a luminescent material with a chemical composition of Y2SiO5:Tb. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent devices with ultrahigh brightness.